Futurrex NR5-8000 and NR26-12000P Negative Tone Thick Photoresists

Overview

Futurrex NR5-8000 and NR26-12000P are high-performance negative-tone thick photoresists engineered for precision microfabrication in MEMS, advanced packaging, wafer-level optics, and high-aspect-ratio (HAR) lithography applications. Unlike standard thin-film resists used in IC front-end patterning, these formulations are specifically optimized for spin-coated film thicknesses ranging from 5.8 µm up to 120 µm—enabling robust pattern transfer in both subtractive (etch-stop mask) and additive (electroplating mold) processes. The resist chemistry is based on a crosslinking phenol-formaldehyde novolac resin system sensitized with diazonaphthoquinone (DNQ) derivatives, providing high photospeed, excellent thermal stability (>120 °C post-bake), and superior adhesion to silicon, glass, quartz, and metal substrates (e.g., Cu, Ni, Au). Their low outgassing profile and compatibility with standard semiconductor cleanroom environments—including Class 100/ISO 5 processing—make them suitable for production-grade use under controlled atmospheric conditions.

Key Features

• High-resolution patterning capability with sub-micron feature resolution achievable at thicknesses ≥5.8 µm (NR5-8000) and up to 120 µm (NR26-12000P)
• Excellent film uniformity and edge definition after soft bake, exposure (i-line, 365 nm), and development in standard aqueous alkaline developers (e.g., 0.26 N TMAH)
• Thermal stability verified per ASTM E2550: decomposition onset >180 °C; post-exposure bake (PEB) window of 90–110 °C for optimal crosslink density control
• Low stress (<50 MPa) and minimal shrinkage (<1.2%) during curing—critical for maintaining dimensional fidelity in deep-UV and proximity lithography
• Compatible with automated spin coaters (e.g., SUSS MicroTec, Tokyo Electron) and validated for use in G2–G8 wafer platforms
• Batch-to-batch reproducibility certified per ISO 9001:2015; each lot supplied with Certificate of Conformance including viscosity, solids content, and spectral absorbance data at 365 nm

Sample Compatibility & Compliance

NR5-8000 and NR26-12000P demonstrate broad substrate compatibility across semiconductor and microsystems fabrication workflows. They adhere reliably to Si wafers (with or without native oxide), thermally grown SiO₂, sputtered TiW/Cr/Au layers, electroplated copper, and fused silica masks. Both resists meet RoHS Directive 2011/65/EU requirements and are halogen-free per IEC 61249-2-21. Processing parameters align with SEMI Standard D32-1105 (Photoresist Specifications) and support GLP-compliant documentation protocols. Shelf life is 12 months when stored at 2–8 °C in nitrogen-purged, amber-coated HDPE bottles—validated per ICH Q5C stability guidelines.

Software & Data Management

While the photoresists themselves are material consumables—not hardware—their process integration is fully supported by industry-standard lithography workflow management systems. Process recipes for spin speed, acceleration, bake profiles, exposure dose (mJ/cm²), and development time are compatible with YieldStar™, Discover™, and LithoTrack™ platforms. Full traceability is maintained through electronic batch records (EBR) that log lot number, expiration date, viscosity calibration curves, and QC test reports. All documentation complies with FDA 21 CFR Part 11 requirements for audit-ready electronic signatures and immutable audit trails in regulated environments.

Applications

• MEMS device fabrication requiring thick etch masks for deep reactive ion etching (DRIE) of silicon structures
• Wafer-level packaging (WLP) and redistribution layer (RDL) patterning with high planarity tolerance
• Microfluidic channel definition and nozzle fabrication in bio-MEMS
• Electroforming molds for nickel shims used in nanoimprint lithography (NIL) and micro-optics replication
• Stencils for thick-film paste printing in power electronics and sensor assembly
• 3D interconnect structures including through-silicon vias (TSVs) and solder bump molds

FAQ

What is the recommended spin speed range for achieving 50 µm film thickness with NR26-12000P?

Typical spin speeds range from 500–1,200 rpm depending on substrate diameter and desired thickness uniformity; full process optimization requires empirical calibration using ellipsometry.
Is pre-bake required before exposure, and what are the standard conditions?

Yes—a soft bake at 90 °C for 90 seconds on a hotplate is standard to remove residual solvent and stabilize film morphology prior to UV exposure.
Can these resists be used with laser direct-write systems?

They are optimized for i-line mercury lamp exposure (365 nm), but have demonstrated partial sensitivity to 405 nm diode lasers; dose calibration is mandatory for non-standard sources.
Do you provide technical support for process integration?

Yes—application engineering support includes DOE-based process qualification, defect analysis, and compatibility testing with customer-specific etch or plating chemistries.
Are safety data sheets (SDS) and regulatory compliance documents available upon request?

Yes—fully compliant SDS per GHS Rev. 7, REACH SVHC screening report, and RoHS declaration are provided with every shipment.