Atomic Layer Deposition Equipment
Filter
Showing 1–30 of 32 results
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL-3000Plus |
| Substrate Size | 4-inch (100 mm) |
| Process Temperature Range | 350–800 °C |
| Number of Precursor Lines | 6 |
| Vacuum Base Pressure | ≤5 Pa |
| Film Thickness Uniformity | ≤3% @ 100 mm |
| System Dimensions (W × H × D) | 835 × 1644 × 700 mm |
| Weight | 160 kg |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL1000 Series |
| Substrate Size | 4-inch (φ100 mm) |
| Process Temperature | Up to 350 °C |
| Precursor Channels | 2 |
| Uniformity | ≤3% (1σ, across 4-inch wafer) |
| Vacuum Base Pressure | ≤5 Pa |
| Dimensions (W×H×D) | 582 × 450 × 410 mm |
| Weight | 50 kg |
| Optional Accessories | Powder deposition stage (0–45° tilt, 5 cm³ capacity), ozone generator, N₂ purge module, glovebox integration kit, precursor heaters (up to 200 °C), dry vacuum pump, exhaust abatement unit |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Size | Ø100 mm (4-inch) |
| Process Temperature Range | 350–800 °C |
| Precursor Channels | 6 |
| Uniformity | ≤3% (at Ø100 mm) |
| Dimensions (W × H × D) | 1418 × 1728 × 840 mm |
| Weight | 200 kg |
| Brand | AGUS |
|---|---|
| Origin | Japan |
| Model | SAL3000 |
| Substrate Compatibility | Up to φ100 mm (4-inch) |
| Maximum Precursor Channels | 6 |
| Uniformity | ≤3% @ 100 mm |
| Process Temperature Range | Ambient to 800 °C (with optional heater) |
| Precursor Temperature Control | Up to 200 °C |
| Vacuum System | Dry Pump Compatible |
| Exhaust Treatment | Optional Scrubber Integration |
| Software | Touchscreen GUI with ≥30 Programmable Recipes |
| System Architecture | Integrated Mainframe and Control Enclosure |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Lines | 4–10 channels |
| Uniformity | <1.5% (RMS, Al₂O₃ on 4″ Si wafer) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Brand | Angstrom (USA) |
|---|---|
| Origin | USA |
| Model | Angstrom Dep I |
| Substrate Size | 4–12 inch wafers |
| Process Temperature | Up to 650 °C (optional) |
| Precursor Channels | 4–10 |
| Weight | 200 kg |
| Dimensions (W × H × D) | 85 × 65 × 180 cm |
| Uniformity | ≤1.5% (typical for AL₂O₃ on 4″ Si wafers) |
| Brand | Angstrom Sun |
|---|---|
| Origin | USA |
| Model | Angstrom Dep II |
| Substrate Size | 4", 6", 8", or 12" wafers |
| Process Temperature Range | 25–400 °C (optional extended range available) |
| Precursor Channels | 4 standard (upgradable to 6) |
| Uniformity | < 1% (1σ, across full wafer) |
| Footprint | 950 mm × 700 mm (W × D) |
| Cleanroom Compatibility | ISO Class 5 (Class 100) compliant |
| Deposition Modes | Thermal ALD, Plasma-Enhanced ALD (PE-ALD), and Powder ALD capable |
| Weight | Configurable (typical system: ~350 kg) |
| Brand | Anric |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT |
| Substrate Size | 4–6 inch |
| Process Temperature Range | RT to 350 °C |
| Precursor Channels | 5 |
| Weight | 50–70 kg |
| Dimensions (W × H × D) | 50 cm × 75 cm × 75 cm |
| Thickness Uniformity | ±1% |
| Brand | Anric |
|---|---|
| Model | AT |
| Type | Desktop Atomic Layer Deposition (ALD) System |
| Origin | USA |
| Chamber Temperature Range | RT–350 °C |
| Precursor Source Temperature Range | RT–150 °C |
| Process Pressure Range | 0.1–1.5 Torr |
| Maximum Precursor Sources | 5 |
| Substrate Compatibility | Up to 4″ wafers (expandable to 6″) |
| Cycle Time | 6–10 cycles per minute |
| Control Interface | Touchscreen PLC |
| Chamber Architecture | Compact, R&D-Optimized |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT200M |
| Pricing | Upon Request |
| Footprint | 14 in × 15 in × 14.5 in (35.5 cm × 38.1 cm × 36.5 cm) |
| Chamber Volume | ~15 in³ (38.1 cm³) |
| Substrate Capacity | Up to four 2-inch wafers (square or circular) |
| Precursor Ports | Standard 2-port (1 precursor + 1 reactant) |
| Precursor Temp Range | RT to 180 °C ±2 °C (heated jacket) |
| Chamber Temp Range | RT to 300 °C ±1 °C (optional chuck heating to 450 °C+) |
| Plasma Source Option | 13.56 MHz, 80 W hollow cathode plasma (AT200M Plus) |
| Control Interface | 5-inch PLC-driven touchscreen HMI (Windows Ethernet remote access enabled) |
| Materials | Semiconductor-grade stainless steel chamber with metal-sealed fittings, heated manifolds, ultra-fast ALD valves with integrated inert gas purge (UHP N₂ >99.9995%) |
| Compliance | Cleanroom-compatible design |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT410 |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT610 |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT650/850P |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT650/850T |
| Pricing | Upon Request |
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT810 |
| Pricing | Upon Request |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ≤1.5% (across 8-inch wafer) |
| Dimensions | 78 × 56 × 28 cm |
| Thermal Wall | 300 °C aluminum heated chamber |
| Precursor Bottle Temp | up to 175 °C |
| Transport Line Temp | up to 200 °C |
| Plasma Option | ICP-based, 13.56 MHz, 300 W, air-cooled |
| MFC-Controlled Gas Lines | 4 (3 process gases + 1 carrier) |
| Vacuum Interface | Standard CF-40 flanges |
| Compatible With | In-situ metrology modules, powder deposition kits, load-lock, QCM thickness monitoring, ozone generator |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ≤1.5% (across 8-inch wafer) |
| Dimensions | 78 × 56 × 28 cm |
| Thermal Wall | 300 °C aluminum heated chamber |
| Precursor Bottle Temp | up to 175 °C |
| Transport Line Temp | up to 200 °C |
| Plasma Option | ICP-based, 13.56 MHz, 300 W, air-cooled |
| MFC-Controlled Gas Lines | 4 (3 process gases + 1 carrier) |
| Vacuum Interface | Standard CF-40 flanges |
| Compatible Add-ons | In-situ ellipsometry, powder deposition module, load lock, QCM thickness monitor, ozone generator, heated sample stage (500 °C) |
| Brand | Arradiance |
|---|---|
| Origin | USA |
| Model | GEMStar-8 XT |
| Substrate Size | Up to 200 mm (8-inch) wafers |
| Process Temperature | 300°C aluminum alloy hot-wall chamber with convective temperature control |
| Precursor Channels | 8 independent precursor lines with CF-40 vacuum flanges |
| Chamber Dimensions (W × H × D) | 78 × 56 × 28 cm |
| Thickness Uniformity | <1% across 200 mm substrate |
| Thermal Uniformity | 99.9% |
| Maximum Sample Thickness | 32 mm |
| Plasma Option | Integrated 13.56 MHz ICP plasma source (300 W, air-cooled) |
| Mass Flow Controllers | 4 MFCs (3 for plasma gases, 1 for carrier gas) |
| Compliance | CF-40 standard vacuum interface, glovebox-compatible side-mount configuration |
| Brand | ATLANT3D |
|---|---|
| Origin | Denmark |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | NANOFABRICATOR™ LITE |
| Substrate Size | Up to 4-inch wafers |
| Process Temperature Range | 50 °C – 300 °C |
| Precursor Channels | 2 |
| Dimensions (W × H × D) | 1400 mm × 800 mm × (depth not specified) |
| Thickness Uniformity | Capable of controlled thickness gradients across substrate |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Genesis ALD |
| Substrate Width | Up to 420 mm |
| Process Temperature | Up to 250 °C |
| Precursor Channels | Configurable (standard ≥4) |
| ALD Film Thickness Range | Up to 100 nm |
| Dynamic Deposition Rate (Al₂O₃) | 10 nm·m/min |
| Uniformity | ≤±1.5% (3σ, across full web width) |
| System Footprint | Customizable per integration requirements |
| Weight | Site-specific (typically 1,200–2,500 kg) |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | BTF-ALD-100 |
| Precursor Configuration | 2 heated metal precursor lines (up to 200 °C) + 1 H₂O precursor line |
| Sample Capacity | Up to 4-inch wafers (100 mm), fully compatible with ≤4″ substrates |
| Uniformity | < ±1% non-uniformity over 4″ Al₂O₃ film after 300 ALD cycles |
| Base Pressure | ≤5 × 10⁻⁵ Torr (with dual-stage rotary vane pump, ≥16 m³/h) |
| Temperature Control | Substrate heating up to 300 °C (±0.5 °C) |
| Vacuum Gauge | MKS digital capacitance manometer (10⁻⁵–10⁵ Torr) |
| Sealing | Perfluoroelastomer (FFKM) O-rings, leak rate < 5 × 10⁻⁷ Pa·L/s |
| MFC Accuracy | ±1% FS for two analog mass flow controllers |
| Power Supply | 380 V AC, 50–60 Hz, 5 kW |
| Brand | Forge Nano |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PROMETHEUS |
| Quotation | Upon Request |
| Substrate Capacity | 5–5000 g powder |
| Process Temperature | Up to 200 °C |
| Precursor Channels | 2–8 |
| Weight | >200 kg |
| Footprint | Floor-Standing |
| Uniformity | Conformal atomic-layer coating across entire powder surface |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | ALD OpAL |
| Substrate Size | Up to 200 mm |
| Process Temperature | Up to 200 °C |
| Precursor Sources | Up to 4 (liquid or solid) |
| Plasma-Enhanced ALD Capability | Optional, field-upgradable |
| Chamber Design | Direct-load, open-frame thermal ALD platform |
| Safety Integration | Compatible with N₂-purged gloveboxes and exhaust hoods |
| Service Support | Lifetime process support, including new recipe development and material-specific optimization guidance |
| Brand | Picosun |
|---|---|
| Origin | Finland |
| Model | P-300B |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ±1.5% (1σ, across 8″ wafer or batch load) |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | R-Series |
| Price Range | USD 135,000 – 270,000 (FOB Helsinki) |
| Substrate Size | 50–200 mm (2″–8″, 8″ available on request) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 2–6 (gas, vaporized liquid, or solid-source compatible) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 70 × 105 × 92.5 cm |
| Uniformity | < ±1% across 200 mm wafers (typical, SiO₂ on Si) |
| Brand | Qiyue Technology |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MINI-ALD4 |
| Substrate Size | Up to 100 mm (4-inch) wafers |
| Chamber Architecture | Dual-chamber (reaction + load-lock) |
| Heating System | Radiant heating with high temperature uniformity |
| Gas Delivery | Optimized laminar flow path with precursor bottle heating, heated transfer lines, and adjustable pulsing sequence |
| Optional Modules | Plasma source, powder ALD module, ozone generator |
| Film Compatibility | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), nitrides (e.g., TiN, TaN), pure metals (e.g., Pt, Ru), and doped compounds |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Model | Glove Box Integrated |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | RT to 500 °C (customizable) |
| Precursor Channels | Up to 6 (solid & liquid sources supported, customizable) |
| Reactant Gas Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Plasma Gas Channels | 4 (customizable) |
| RF Power | 0–1000 W |
| Pressure Measurement | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5×10⁻³ Torr |
| Vacuum Pump | Standard oil-sealed rotary vane pump |
| Control System | 19″ industrial touch display, embedded IPC running Windows 7, PLC-based real-time control with fieldbus support |
| Source Bottle Heater | RT–200 °C |
| Glove Box Integration | Dual-glove, single-station configuration (customizable) |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | PA Series |
| Process Temperature Range | RT to 450°C |
| Precursor Channels | Up to 4 (customizable), supporting solid & liquid precursors |
| Reactant Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Pressure Monitoring | Triple corrosion-resistant capacitance manometers, 0.005–1000 Torr |
| Base Vacuum | <5×10⁻³ Torr |
| Heating Zone Temperature Range | RT to 150°C |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | PEALD E200SP |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | Room Temperature to 500 °C (customizable) |
| Precursor Channels | Up to 6 independent precursor lines (solid & liquid sources, customizable) |
| Reactant Gas Lines | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Plasma Gas Lines | 4 (customizable) |
| RF Power | 0–1000 W |
| Pressure Measurement | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5 × 10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touch-enabled HMI, embedded IPC, Windows 7 OS, PLC-based real-time control |
| Source Bottle Heating | RT–200 °C (independent modules) |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Thermal-ALD E300S |
| Substrate Size | 300 mm (12 inch) diameter (customizable) |
| Process Temperature Range | RT to 500 °C |
| Temperature Uniformity | ±1 °C (customizable) |
| Precursor Channels | Up to 6 independent, supporting solid & liquid precursors with heated source bottles |
| Reactant Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Pressure Range | 0.005–1000 Torr (dual corrosion-resistant capacitance manometers) |
| Base Pressure | <5 × 10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touchscreen HMI, embedded IPC running Windows 7, PLC-based real-time logic control with fieldbus support |