Single Crystal Furnace
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| Brand | Cyberstar |
|---|---|
| Origin | France |
| Model | LHPG |
| Heating Source | High-Power Diode or CO₂ Lasers |
| Max Temperature | >2800 °C |
| Pulling Stroke | 140 mm |
| Pulling & Rotation Speeds | Precisely Adjustable |
| Atmosphere Control | High-Purity Ar, O₂, N₂, H₂, or Mixed Gases |
| Pressure Range | Up to 1.5 bar (abs) |
| Vacuum Level | ≤1×10⁻⁴ mbar |
| In Situ Monitoring | Real-Time CCD Imaging + Non-Contact Infrared Pyrometry |
| Crystal Geometry | Single-Crystal Fibers (Typical Ø 0.3–2.0 mm) |
| Crucible-Free Operation | Yes |
| Applicable Materials | Refractory Oxides (e.g., SrTiO₃), Nitrides, Carbides, and Other High-Melting-Point Compounds |
| Brand | CSC |
|---|---|
| Origin | Japan |
| Supplier Type | Authorized Distributor |
| Import Status | Imported |
| Model | Not Applicable |
| Pricing | Upon Request |
| Brand | CSC |
|---|---|
| Origin | Japan |
| Model | Magnetic Liquid Seal Type |
| Crystal Growth Capability | Single Crystal |
| Vacuum/Pressure Compatibility | Continuous Operation from High Vacuum to High Pressure |
| Heating System | Four-Mirror Optical Configuration |
| Control Interface | PC-Based Remote Control |
| Power Variants | FZ-T-4000-H (Standard), FZ-T-10000-H (High Power), FZ-T-12000-X (Super High Temperature) |
| Brand | Quantum Design |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Origin Category | Imported |
| Model | IR-Furnace |
| Crystal Growth Rate | 0.1–1.4 mm/h, 1–14 mm/h, or 10–140 mm/h (selectable via lamp power and feed rate calibration) |
| Maximum Crystal Diameter | 6 mm |
| Operating Temperature Range | Up to 2150 °C |
| Heating Source | Commercial-grade halogen lamps with gold-coated dual-curved mirrors |
| Cooling System | Integrated closed-loop air-cooling (no external water supply required) |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments |
| Brand | Quantum Design |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Imported |
| Model | LFZ-2KW |
| Heating Method | Five-Beam Diode Laser Array |
| Maximum Laser Power | 2 kW |
| Melting Zone Temperature Range | 2600–3000 °C |
| Max. Crystal Diameter | 8 mm |
| Growth Rate | Up to 300 mm/hr |
| Rotation Speed | Up to 100 rpm |
| Chamber Pressure Rating | Up to 10 bar |
| Atmosphere Options | O₂, Ar, N₂, or custom gas mixtures |
| Real-Time Monitoring | Integrated HD visual feedback system |
| Control Interface | PC-based closed-loop temperature and motion control |
| Brand | SciDre |
|---|---|
| Origin | Germany |
| Model | HKZ |
| Maximum Melting Zone Temperature | Up to 3000 °C |
| Melting Zone Pressure Range | 10–300 bar (selectable) |
| Vacuum Level | 1×10⁻⁵ mbar |
| Atmosphere Options | Ar, O₂, N₂, air, or custom gas mixtures |
| Xenon Lamp Power Options | 3 kW, 5 kW, 6.5 kW |
| Sample Rod Diameter | 6.8 mm or 9.8 mm |
| Pulling Rate | 0.1–50 mm/h |
| Rotation Speed | 0–70 rpm |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Product Category | Domestic |
| Model | IPS Series SiC Crystal Growth System |
| Crystal Types | Silicon Carbide (SiC) only |
| Max. Crystal Diameter | 6-inch and 8-inch |
| Typical Boule Length (Constant-Diameter Section) | 20–30 mm |
| Base Vacuum | ≤5.0 × 10⁻⁵ Pa |
| Pressure Rise Rate | ≤3 Pa / 12 h |
| Microtube Density (6″ P-type Substrate) | <0.5 cm⁻² |
| Resistivity Range (6″ P-type) | 0.015–0.028 Ω·cm |
| Cooling System | Dual-loop water cooling with real-time temperature & flow monitoring |
| Heating Method | Optimized RF induction coil architecture |
| Process Control | Fully integrated PIM self-diagnostic module + multi-stage PID thermal profiling |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | IMD MPCVD Diamond Growth System |
| Crystal Material | Synthetic Diamond |
| Maximum Crystal Diameter | 2.2 inches (55.9 mm) |
| Typical Crystal Length (Constant-Diameter Zone) | 2–3 cm |
| Process Capability | High-Purity Diamond CVD Deposition, In-situ Thermal Annealing, Homoepitaxial & Heteroepitaxial Growth |
| Brand | SUNJUNE |
|---|---|
| Model | VS-Q Series |
| Origin | Guangdong, China |
| Manufacturer | SUNJUNE Technology Co., Ltd. |
| Construction | Stainless Steel Monolithic Enclosure |
| Vacuum Performance | ≤5 Pa (Mechanical Pump Only) / ≤1×10⁻⁵ Pa (MPU-90i Molecular Pump Unit) |
| Ultimate Vacuum (MPU-90i) | ≤1×10⁻⁶ Pa |
| Quartz Tube Dimensions Supported | OD 5–50 mm, Length 80–1500 mm |
| Rotation Speed | Adjustable |
| Vacuum Pumping Rate | Adjustable |
| Protective Gas Inlet Flow | Adjustable |
| Crystal Growth Capability | Black Phosphorus Crystals |
| Single-Crystal Growth Duration per Cycle | 12 h |
| Silicon Single-Crystal Constant-Diameter Length | 6 mm |
| Grown Crystal Diameter Range | 2–5 mm |
| Compliance | ASTM E29, ISO/IEC 17025 (for lab process validation), GLP-compliant operation mode supported |
| Control Interface | Touchscreen with IL Intelligent Logic Control Software |
| Operating Modes | Manual (independent mechanical pump control) & Automatic (interlocked mechanical + molecular pump sequencing) |
| Brand | SUNJUNE |
|---|---|
| Origin | Guangdong, China |
| Manufacturer | SUNJUNE Technology Co., Ltd. |
| Model | VS-Q1 |
| Crystal Type | Single Crystal |
| Max. Crystal Diameter | 2–5 mm |
| Isometric Growth Length (Si) | 6 mm |
| Typical Growth Cycle per Run | 10 h |
| Quartz Tube OD Range | 5–50 mm |
| Quartz Tube Length Range | 80–1500 mm |
| Base Pressure (Mechanical Pump) | < 5 Pa |
| Base Pressure (MPU-90i Molecular Pump Unit) | < 1×10⁻⁵ Pa |
| Ultimate Vacuum (MPU-90i w/ Full-Range Gauge) | ≤ 1×10⁻⁶ Pa |
| Rotational Speed | Adjustable |
| Vacuum Pumping Rate | Adjustable |
| Backfill Gas Flow | Adjustable |
| Compliance | CE-marked components, GLP-aligned operational logging capability |
| Brand | SUNJUNE |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Direct Manufacturer |
| Country of Origin | China |
| Model | VS-Q2 |
| Crystal Growth Capability | Single Crystal |
| Typical Growth Cycle per Run | 12 h |
| Diameter Control Precision (for Si single crystal) | ±0.05 mm over 6 mm isometric section |
| Usable Crystal Diameter Range | 2–5 mm |
| Quartz Tube Compatibility | OD 5–50 mm, Length 80–1500 mm |
| Base Vacuum (Mechanical Pump Only) | <5 Pa |
| Ultimate Vacuum (MPU-90i Molecular Pump Unit) | ≤1×10⁻⁶ Pa |
| Rotational Speed Control | Adjustable (0–30 rpm) |
| Vacuum Pumping Rate | Adjustable |
| Backfill Gas Flow Control | Programmable |
| Control Interface | Touchscreen with IL Intelligent Logic (IL) software |
| Operating Modes | Manual (independent pump control) & Auto (interlocked mechanical + molecular pump sequencing) |
| Compliance | Designed for GLP-compliant lab environments |
| Brand | Techno Search Corp |
|---|---|
| Origin | Japan |
| Model | TCA4-6 |
| Maximum Operating Temperature | 2000–3000 °C |
| Chamber Vacuum Level | ≤1×10⁻⁶ Torr (≤1.3×10⁻⁴ Pa) |
| Atmosphere Control | High-purity Ar, pressure range 10⁻⁴ Pa to 1 atm |
| Crucible Rotation Speed | 1–10 rpm (manual) |
| Crystal Pulling Speed | 3–38 mm/hr |
| Pulling Stroke | 150 mm |
| Electrode Configuration | 4 arc-melting electrodes + 1 getter electrode |
| Sustained Arc Current | up to 75 A (adjustable) |
| Peak Arc Current | up to 150 A (short-term, adjustable) |
| Crucible Material | Water-cooled copper |
| Chamber Material | Stainless steel |
| Real-time Visual Monitoring | Integrated high-temperature CCD camera with viewport |