Chemical Vapor Deposition Equipment
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| Brand | Ahkemi |
|---|---|
| Origin | Anhui, China |
| Model | TFE-1200-50-I-220 |
| Maximum Operating Temperature | 1150 °C (short-term), 1100 °C (rated) |
| Temperature Control Accuracy | ±1 °C |
| Heating Zone Length | 220 mm |
| Uniform Temperature Zone Length | 80 mm |
| Tube Dimensions | Φ30/50/60 × 1200 mm |
| Furnace Chamber Diameter × Height | Φ80 × 220 mm |
| RF Power Range | 5–500 W |
| RF Frequency | 13.56 MHz |
| Gas Delivery | 3-channel MFC-controlled (0–500 sccm per channel, customizable) |
| Vacuum System | Dual-stage rotary vane pump (optional diffusion or turbomolecular pump upgrade) |
| Rated Heating Power | 3 kW |
| Recommended Ramp Rate | ≤10 °C/min |
| External Dimensions | 1250 × 510 × 810 mm |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX 2800G4-TM |
| Heating Method | Hot-Wall |
| Internal Chamber Dimensions | 15 × 4 in & 8 × 6 in |
| Reactor Configurations | 42 × 2 in / 11 × 4 in / 6 × 6 in |
| Wafer Throughput | High |
| Process Cycle Time | Rapid |
| Uniformity & Stability | Optimized for Production Yield |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5 WW C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm (8×150 mm configuration) |
| Reactor Type | Planetary Rotating Reactor with Hot Wafer Transfer |
| Temperature Control | Wafer-Level |
| Process Automation | Cassette-to-Cassette Handling |
| Uniformity Control | AutoSat™ Dynamic Saturation Compensation |
| Factory Interface | SECS/GEM compliant |
| Deposition Rate | ~nm/min (material- and process-dependent) |
| Application Focus | SiC, GaN, and other compound semiconductor epitaxy |
| Compliance | Designed for integration into ISO Class 5–7 cleanroom environments and compatible with SEMI S2/S8 safety and automation standards |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5+ C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm & 200 mm (Si, Sapphire, SiC) |
| Operating Pressure | Several mTorr |
| Deposition Rate | Up to several nm/min (material-dependent) |
| Reactor Type | Batch-mode with axial symmetry |
| Wafer Bow Control | Optimized via low-thermal-flux “warm ceiling” design |
| Temperature Uniformity | Minimized vertical thermal gradient for reduced wafer curvature |
| Configurable Substrate Holder | Customer-specific cavity design for precise wafer temperature profiling |
| Capacity | 8×150 mm or 5×200 mm wafers |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Equipment Type | Metalorganic Chemical Vapor Deposition (MOCVD) System |
| Reactor Architecture | Close-Coupled Showerhead® with Triple-Zone Heater |
| Maximum Substrate Temperature | 1400 °C |
| Substrate Configurations | 3×2″, 6×2″, 19×2″ wafers |
| In-situ Monitoring Options | LayTec EpiTT / EpiCurve®, AIXTRON Argus® Full-Wafer Temperature Mapping, AIXTRON Epison® Gas Concentration Sensor |
| Footprint | Compact Design for Lab and Pilot-Line Integration |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Software Platform | AIXTRON ProcessSuite™ with Audit Trail & Electronic Signature Support (21 CFR Part 11 compliant) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | Customized |
| Heating Method | Tungsten Filament with Triple-Zone Temperature Control (up to 1400 °C) |
| Substrate Compatibility | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Reaction Chamber | Adjustable showerhead-to-substrate spacing (5–25 mm) |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Scope | Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI compound semiconductors |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with semiconductor fab infrastructure (SEMI S2/S8, SEMI E10) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10 |
| Heating Method | Hot-Wall |
| Substrate Sizes | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch (carrier exchange supports 6×2 inch, 3×3 inch, 1×6 inch) |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Temperature Control | Triple-zone tungsten filament heating, up to 1400 °C |
| Showerhead-to-Substrate Spacing | Adjustable from 5 mm to 25 mm |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Domain | Semiconductor thin-film epitaxy |
| Film Types | Metallic and compound semiconductor layers (e.g., Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10-SiC |
| Wafer Compatibility | 150 mm & 200 mm |
| Application Focus | SiC Epitaxy for Power Devices |
| Brand | Angstrom |
|---|---|
| Model | customized-23 |
| Chamber Diameter | 200 mm (quartz) |
| Maximum Substrate Diameter | 150 mm |
| Furnace | Triple-zone resistive heating |
| Uniform Temperature Zone | 150 mm |
| Max Temperature | 1000 °C |
| Pressure Control Range | 50–500 mTorr (downstream, VAT throttle butterfly valve) |
| Vacuum Pump | Ebara ESA25-D dry pump (8 CFM) |
| Application Domain | Semiconductor thin-film fabrication, MEMS, optoelectronics, graphene & CNT research |
| Brand | Appsilon |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | MPCVD |
| Heating Method | Microwave Plasma Excitation |
| Application Domain | Semiconductor & Advanced Materials Research |
| Deposition Rate | Configurable per process recipe (typical range: 0.1–10 µm/h for diamond) |
| Process Gases | H₂, CH₄, N₂, O₂, Ar (gas mixing and mass flow control standard) |
| Deposited Films | Single-crystal & polycrystalline diamond, doped diamond (B/N/Si), diamond-like carbon (DLC), SiC, AlN |
| Base Vacuum | ≤5 × 10⁻⁷ mbar (with turbomolecular pumping system) |
| Operating Pressure Range | 10–200 mbar (microwave-coupled plasma stable across full range) |
| Chamber Internal Dimensions | Ø200 mm × 300 mm (standard configuration |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Heating Method | Hot-Wall |
| Deposition Rate | 1 nm/s (typical, process-dependent) |
| Base Vacuum | ≤1×10⁻⁶ Torr |
| Operating Pressure Range | 2–200 mTorr |
| Chamber Internal Diameter | 6-inch (152 mm) |
| Substrate Compatibility | Up to 8-inch wafers |
| Application Domain | Semiconductor Thin-Film Fabrication |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Model | BTF-1200C-CVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5×10⁻¹ Pa |
| Operating Pressure Range | 1.01325×10⁵ to 1.33×10⁻² Pa |
| Maximum Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Tube Diameter Options | Φ25/50/60/80/100 mm × 1000 mm |
| Heating Zone Length | 440 mm |
| Uniform Temperature Zone | 200 mm |
| Control Accuracy | ±1 °C |
| Programmable Stages | 30-segment PID with Auto-Tuning |
| Mass Flow Controllers | Triple-channel, N₂-calibrated (200/500/1000 sccm), Accuracy ±1.5% F.S., Repeatability ±0.2% F.S., Response Time (Gas): 1–4 s |
| Vacuum Pump | Rotary Vane, 10 m³/h, Ultimate Vacuum 5×10⁻¹ Pa, KF25 Inlet/Outlet, Oil Capacity 1.1 L, Noise ≤50 dB(A) |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | Micro PECVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5 × 10⁻¹ Pa |
| Operating Pressure Range | 1.01325 × 10⁵ Pa to 1.33 × 10⁻² Pa |
| RF Power Output | 0–150 W |
| RF Interface | 50 Ω, N-type female |
| Power Stability | ≤5 W |
| Harmonic Content | ≤−50 dBc |
| Max. Heating Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Effective Chamber Dimensions | Φ25 mm / Φ50 mm (Customizable Tube Diameter) |
| Chamber Material | Alumina + High-Temperature Ceramic Fiber |
| Thermocouple Type | K-type |
| Temperature Control Accuracy | ±1 °C |
| Control Mode | 30-Stage Programmable PID with Auto-Tuning |
| Heating Zone Length | 230 mm |
| Heating Element | Resistance Wire |
| Power Supply | Single-phase, 220 V, 50/60 Hz |
| Total System Power | 1 kW |
| Pumping Speed | 10 m³/h |
| Ultimate Vacuum (with Pump) | 5 × 10⁻¹ Pa |
| Vacuum Gauge Range | −0.1 to 0.15 MPa (0.01 MPa/div) |
| Mass Flow Controllers | Triple-channel, Stainless Steel Dual-Ferrule Fittings |
| Standard N₂ Flow Ranges | 200 / 500 / 1000 sccm (Customizable) |
| MFC Accuracy | ±1.5% FS |
| Linearity | ±1% FS |
| Repeatability | ±0.2% FS |
| Response Time (Gas) | 1–4 s |
| (Electrical) | 10 s |
| Working Pressure Drop | 0.1–0.5 MPa |
| Max. Inlet Pressure | 3 MPa |
| Cooling | Forced Air |
| Ambient Temp. Range | 5–45 °C |
| Relative Humidity | ≤85% RH |
| Noise Level | ≤50 dB(A) |
| Vacuum Interface | KF25 (Inlet & Exhaust) |
| Vacuum Connection | Bellows + Manual Gate Valve |
| Brand | Corial |
|---|---|
| Origin | France |
| Model | D250L |
| Heating Method | Hot-Wall |
| Deposition Rate | 520 nm/min |
| Process Gases | SiH₄, NH₃, N₂ |
| Deposited Films | SiO₂, Si₃N₄, SiOF, SiOCH, SiC |
| Base Vacuum | −300 to 50 mTorr |
| Operating Pressure | 0.2–2 Torr |
| Maximum Substrate Size | 200 mm (8-inch) wafers |
| Configuration | Load-Lock with Turbo-Molecular Pump (350 L/s) and Dry Scroll Pump (110 m³/h) |
| RF Power Supply | 300 W, 13.56 MHz |
| Integrated Controllers | TMP, Heater, HV/LV, Plasma Process Controller |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Model | Gasboard-2060 |
| Detection Principle | Non-Dispersive Infrared (NDIR) |
| Target Gases | SiF₄, CF₄, SF₆, NF₃, CO₂ |
| Range | 1–264 ppm (0–200 mTorr) |
| Repeatability | ±0.5% of reading |
| Linearity | ±1% F.S. |
| Detection Limit | 1 ppm |
| Output | Analog (4–20 mA) and Digital (RS485/Modbus RTU) |
| Housing | 316L stainless steel, CF-40 flange compatible |
| Operating Temperature | 0–50 °C |
| Pressure Rating | ≤200 mTorr (vacuum-compatible) |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Model | Gasboard-2061 |
| Detection Principle | Non-Dispersive Infrared (NDIR) |
| Target Gases | WF₆, CF₄, SF₆, NF₃, CO₂ |
| Measurement Range | 1–264 ppm (0–200 mTorr) |
| Repeatability | ±0.5% |
| Linearity | ±1% F.S. |
| Detection Limit | 1 ppm |
| Output Interface | Analog (4–20 mA) and Digital (RS485/Modbus RTU) |
| Housing Material | 316L Stainless Steel |
| Process Connection | CF-35 or ISO-KF40 Flange Compatible |
| Operating Temperature | 0–50 °C |
| Pressure Rating | Up to 200 mTorr (absolute) |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-CVD1200-50 |
| Heating Method | Resistive Tube Furnace (Dual Independent Zones) |
| Maximum Operating Temperature | 1100 °C |
| Vacuum Level | ≤1.0 × 10⁻³ Pa (with Molecular Pumping System) |
| Tube Dimensions | Ø50 mm × 1000 mm (quartz), optional diameters up to Ø100 mm |
| Heating Zone Configuration | 2 × 200 mm independent zones |
| Temperature Uniformity | ±5 °C over 100 mm zone length |
| Temperature Control | 50-segment programmable PID |
| Gas Channels | 3 (N₂, H₂, Ar configurable) |
| Mass Flow Accuracy | ±2.0% FS |
| Gas Inlet/Outlet Interface | 1/4″ VCR + KF16/KF25/KF40 vacuum flanges |
| Pressure Measurement Range | 10⁵ Pa to 1 × 10⁻⁵ Pa (composite gauge) |
| Power Supply | AC 220 V, 50/60 Hz |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-PECVD100-1200 |
| RF Power Supply | 13.56 MHz ±0.005%, 0–300 W output, max reflected power 100 W, reflected power <3 W at full power, stability ±0.1% |
| Tube Material | High-purity quartz |
| Tube OD | 100 mm |
| Furnace Length | 440 mm |
| Heating Zone | Dual-zone (2 × 200 mm) |
| Max Continuous Operating Temperature | 1100 °C |
| Temperature Control Accuracy | ±1 °C |
| Temperature Program | 30-segment programmable PID via LCD touchscreen |
| Vacuum Seal | 304 stainless steel flange |
| Base Pressure | 0.1 Pa (via dual-stage rotary vane pump, 1.1 L/s) |
| Working Pressure Range | –0.15 MPa to +0.15 MPa |
| Gas Channels | 6 independent MFC-controlled lines (H₂, CH₄, C₂H₄, N₂, NH₃, Ar) |
| MFC Ranges | A–C: 0–200 SCCM |
| D–F | 0–500 SCCM |
| MFC Accuracy | ±1.5% F.S. |
| Gas Mixing Tank Volume | 1 L |
| Vacuum Interface | KF16 |
| Gas Fitting | 1/4" VCR-style compression fittings |
| Cooling | Motorized sliding furnace rail for rapid thermal quenching |
| Power Input | AC 220 V, 50 Hz |
| Brand | DENTON |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Voyager |
| Price Range | USD $38,000 – $64,000 |
| Brand | iplas |
|---|---|
| Origin | Germany |
| Model | CYRANNUS® |
| Operating Pressure Range | 10 mbar to atmospheric pressure |
| Plasma Generation Method | External multi-electrode microwave excitation (2.45 GHz or 915 MHz) |
| Substrate Compatibility | Up to 300 mm diameter planar or curved substrates |
| Compatible Precursor Gases | CH₄/H₂/O₂/Ar/He/N₂ (inert and reactive) |
| Deposited Materials | Single-crystal diamond, polycrystalline diamond, nanocrystalline diamond, DLC, Al₂O₃, c-BN |
| Plasma Stability | High reproducibility under dynamic gas flow, pressure, and voltage fluctuations |
| Safety Compliance | Fully shielded microwave cavity |
| Brand | KEJING |
|---|---|
| Model | OTF-1200X-4-C4LVS |
| Max Operating Temperature | 1100 °C (continuous at 1000 °C) |
| Heating Zone Length | 440 mm |
| Uniform Temperature Zone | 120 mm (±1 °C, 400–1100 °C) |
| Quartz Tube Dimensions | Outer Tube Ø100 × ID96 × 1400 mm |
| Gas Channels | 4 independent MFC-controlled lines (0–100 / 0–200 / 0–200 / 0–500 sccm) |
| Vacuum Level | 10⁻² Torr (mechanical pump) |
| Power Supply | 208–240 VAC, 50/60 Hz, single-phase, 2.5 kW |
| Cooling Method | Forced-air + sliding furnace displacement |
| Compliance | ASTM F2623 (CVD process validation), ISO 9001-certified manufacturing |
| Weight | 136 kg (300 lb) |
| Warranty | 12 months (excludes consumables: quartz tubes, O-rings, heating elements) |
| Brand | KEJING |
|---|---|
| Origin | Anhui, China |
| Model | OTF-1200X-4-III-9HV |
| Max. Operating Temperature | 1200 °C (continuous at 1100 °C) |
| Heating Rate | ≤20 °C/min |
| Tube Dimensions | 100 mm OD × 92 mm ID × 1400 mm L (fused quartz) |
| Vacuum Level | 10⁻⁵ Torr (turbo-molecular pump) |
| Mass Flow Controllers | 9-channel digital MFCs (CS200 series |
| ranges | 0–1000, 0–200, and 0–10 sccm |
| Power Supply | 7 kW, AC 208–240 V, single-phase, 50/60 Hz |
| Temperature Uniformity | ±1 °C over 500 mm constant-temperature zone |
| Certification | CE |
| Brand | KEJING |
|---|---|
| Model | OTF-1200X-4-R-II-AF |
| Maximum Operating Temperature | 1200 °C (≤1 h) |
| Continuous Operating Temperature | 1100 °C |
| Heating Zones | 2 × 200 mm (total 400 mm), each independently controlled |
| Uniform Temperature Zone | 200 mm (±1 °C at setpoint) |
| Tube Dimensions | Quartz, 100 mm OD × 1200 mm L (tapered ends: 60 mm OD) |
| Rotation Speed | 0–10 RPM (DC motor-driven) |
| Tilt Angle | Left 0–30°, Right 0–15° |
| Vacuum Level | 4.5×10⁻² Torr (mechanical pump) |
| Gas Flow Limit | ≤200 SCCM |
| Feed Rate | Up to 97 cm³/min (adjustable via potentiometer) |
| Collection Vessel | 1 L stainless steel canister with inert-atmosphere sealing |
| Power | 4 kW (furnace) + 200 W (feeder), AC 208–240 V, single-phase, 30 A circuit breaker required |
| Net Weight | 125 kg |
| Certifications | CE, UL/MET/CSA compliant (>24 V components), optional TÜV or CSA certification available upon customer request |
| Brand | Korea Vacuum |
|---|---|
| Origin | South Korea |
| Model | PECVD/RIE |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication |
| Gas Channels | 8 (4 for PECVD, 4 for RIE) |
| Deposited Films | SiOₓ, SiNₓ |
| Base Pressure | 1×10⁻⁷ Torr |
| Operating Pressure Range (PECVD) | 1×10⁻³ Torr |
| Operating Pressure Range (RIE) | 0.02–500 mTorr |
| Maximum Substrate Size | 8-inch (200 mm) |
| RF Source Power | 600 W, 13.56 MHz |
| RF Bias Power | 300 W, 13.56 MHz |
| Platen Temperature | Up to 400 °C |
| Pumping System | 200 L/sec corrosion-resistant turbomolecular pump (Pfeiffer TPH261PC) + BOC Edwards RV12 roughing pump |
| Gas Distribution | Showerhead-type for both PECVD and RIE |
| Substrate Handling | Manual loading with pneumatic top-hinged lid |
| Vacuum Gauges | Baratron capacitance manometer (RIE), BOC Edwards wide-range gauge (PECVD & RIE) |
| MFC Count | 4 (PECVD), 3 (RIE) |
| Cooling | Water-cooled platen and electrodes |
| Control Interface | LabVIEW-based PC control with automated pressure regulation and process sequencing |
| Brand | Microphase |
|---|---|
| Origin | Japan |
| Model | MPCNT-Basic |
| Price Range | USD 30,000–40,000 |
| Heating Method | Hot-Wall |
| Base Vacuum Level | Low Vacuum (10⁻¹–10⁰ Pa) |
| Operating Pressure | Adjustable |
| Carbon Sources | Ethanol (liquid), other carbon-bearing liquids (e.g., bioethanol, methanol) or gaseous hydrocarbons |
| Deposited CNT Morphologies | Powder CNTs, fiber-type CNTs (o-fiber), coil-type CNTs (o-coil), and continuous film-type CNTs |
| Substrate Compatibility | Si, quartz, alumina, stainless steel, Ti, Pt, NiCu alloys, and other catalytically active or inert substrates |
| Temperature Range | 400–800 °C with real-time monitoring |
| Catalyst Requirement | In-situ catalytic activation via ethanol’s inherent reducing capability — no pre-deposited catalyst layer or external H₂ required |
| Brand | Microphase |
|---|---|
| Origin | Japan |
| Model | MPCVD-50 |
| Heating Method | Hot-Wall |
| Base Vacuum | 10 Pa |
| Operating Pressure Range | Adjustable from atmospheric to low vacuum (10–10⁵ Pa) |
| Maximum Temperature | 1200 °C |
| Quartz Tube Dimensions | Ø50 mm / Ø70–110 mm × 1000 mm |
| Substrate Size Range | 60 mm × 60 mm to 120 mm × 120 mm |
| Precursor Gases | H₂, N₂, CH₄, C₂H₅OH (ethanol) |
| Deposited Materials | Vertically aligned CNT arrays, CNT powders, freestanding CNT films, and patterned CNT structures |
| Gas Control | Triple-channel mass flow controllers (MFCs) for inert, hydrocarbon, and reducing gases |
| Ethanol Delivery | Precision syringe pump with gravimetric calibration |
| Compliance | Designed for ISO/IEC 17025-compliant lab environments |
| Brand | Microphase |
|---|---|
| Origin | Japan |
| Model | MPCVD-Graphene |
| Heating Method | Hot-Wall |
| Deposition Gases | C₂H₂, C₂H₄, or CH₄ |
| Deposited Materials | Graphene Films, Carbon Nanotubes |
| Base Vacuum | Adjustable |
| Operating Pressure | MFC-Controlled |
| Quartz Tube Dimensions | OD 50 mm × ID 46 mm × L 1200 mm |
| Heating Zone | Ø60 mm × L260 mm |
| Max Temperature | 1200 °C |
| Usable Temp Range | 400–1100 °C |
| Temperature Control | Programmable PID |
| Gas Channels | 3 (hydrocarbon, H₂, Ar) |
| Vacuum Pump | Rotary Vane, 20 L/min |
| Sample Temperature Monitoring | Direct Thermocouple |
| Cooling Mechanism | Manual 300 mm Sliding Furnace |
| Overall Dimensions | W1400 × H1000 × D500 mm |
| Brand | Moorefield |
|---|---|
| Origin | United Kingdom |
| Heating Method | Cold-Wall Design |
| Base Pressure | 5×10⁻⁷ mbar |
| Substrate Dimensions | 20 × 40 mm² |
| Maximum Temperature | 1100 °C |
| Growth Time | <30 min |
| Process Gases | Ar, H₂, CH₄ |
| Mass Flow Controllers (MFCs) | Integrated for Precise Gas Delivery |
| Plasma Option | Optional RF Source (150 W, 13.56 MHz) for oCVD-WPG Variant |
| Compliance | Compatible with ISO Class 5 Cleanroom Environments |
| Safety Features | Exhaust Dilution Module, Vacuum Interlock, Thermal Shutdown |
| Brand | MVSystems |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | MVS |
| Pricing | Available Upon Request |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Region of Manufacture | Domestic (China) |
| Model | OTF-1200X-4-NW |
| Quotation | Upon Request |
| Main Tube | 100 mm OD × 94 mm ID × 750 mm L (Fused Quartz) |
| Max Operating Temp (Main Zone) | 1100 °C (<2 hr), 1000 °C continuous |
| Preheat Zone | 30 mm OD × 150 mm L (Stainless Steel), RT–600 °C continuous |
| Heating Zones | Main: 440 mm (100 mm isothermal) |
| Preheat | 150 mm |
| Max Ramp Rate | 20 °C/min (both zones) |
| Power Supply | 220 V AC, 50/60 Hz, single-phase |
| Max Power | 3.6 kW |
| Cooling | Water-cooled KF25 flange with integrated seal cooling |
| Gas Inlets | Four 1/8" Swagelok ports on left flange |
| Vacuum Compatibility | KF25 interface for turbomolecular or rotary vane pump |
| Control System | Dual independent PID controllers, 30-segment programmable ramp-soak profiles, K-type thermocouples, ±1 °C accuracy |
| Optional | PC-based temperature control software (USB/RS485) |
| Dimensions (closed) | 1580 × 458 × 585 mm (62" × 18" × 23") |
| (fully extended) | 2040 × 458 × 585 mm (80" × 18" × 23") |
| Weight | 110 kg |
| Warranty | 12 months parts & labor (excludes consumables: quartz tube, O-rings, heating elements) |
| Safety Certification | UL-listed electrical components (>24 V) |