Epitaxy System
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Showing 1–30 of 45 results
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Combinatorial PLD System |
| System Type | Turnkey Pulsed Laser Deposition Platform with Continuous Composition Spread (CCS-PLD) Capability |
| Substrate Compatibility | 2-inch wafers (4-inch and 6-inch available on request) |
| Operating Environment | Up to 800 °C, up to 500 mTorr O₂ partial pressure |
| Deposition Mode | Standard PLD + CCS-PLD (Continuous Composition Spread) |
| Target Configuration | Multi-target carousel for binary/ternary/quaternary combinatorial synthesis |
| Film Architecture Support | Epitaxial thin films, multilayer heterostructures, superlattices |
| Oxygen Compatibility | Fully compatible with reactive oxygen ambient for metal oxide epitaxy |
| Post-deposition Annealing | Not required due to in-situ compositional grading and kinetic control |
| Maskless Operation | Enabled by angular deposition gradient and laser fluence modulation |
| Layer Resolution | Sub-monolayer precision per pulse cycle |
| Compliance | Designed for GLP-compliant thin-film R&D environments |
| Brand | k-Space Associates |
|---|---|
| Model | kSA ACE |
| Origin | USA |
| Vacuum Compatibility | Ultra-High Vacuum (UHV) / High Vacuum |
| Substrate Compatibility | Standard Semiconductor Wafers (e.g., Si, GaAs, InP, sapphire) |
| Source Flexibility | Unlimited (compatible with effusion cells, e-beam evaporators, magnetron sputter targets, PLD plumes) |
| Base Rotation | Supported |
| Optical Configuration | Triple Hollow Cathode Lamp (HCL) Integration |
| Detection Principle | Atomic Absorption Spectroscopy (AAS) |
| Element Capacity | Up to 3 elements simultaneously |
| Calibration Light Source | Pulsed Xenon Flash Lamp |
| Thermal Stability | Actively Temperature-Stabilized Optical Path |
| Data Interface | TCP/IP + Analog Voltage Output (0–10 V, proportional to absorbance/growth rate) |
| Software | kSA ACE Control & Analysis Suite (Windows-based, GLP-compliant logging) |
| Brand | Truth Instruments Company Limited |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (PRC) |
| Model | MBE-400 |
| Quotation | Upon Request |
| Substrate Heating | 2-inch Wafer Compatibility |
| Base Pressure | ≤1×10⁻¹⁰ mbar |
| Substrate Temperature Control | Room Temperature to 800 °C |
| Effusion Cell Sources | 6–10 Knudsen Cells |
| Brand | NBM |
|---|---|
| Origin | USA |
| Model | Micro PLD |
| Substrate Heating Temperature | 1200 °C |
| Base Vacuum | 1×10⁻⁶ Torr |
| Substrate Diameter | 2 inch |
| Target Positions | 4 |
| Substrate Rotation Speed | 20 rpm |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 180 PED |
| Quotation | Upon Request |
| Vacuum Chamber | 18" spherical chamber with 8" CF viewport, 6.75" CF PED source port, three 6" CF ports, two additional 2.75" and 1.33" CF ports |
| Electron Gun Energy | 8–20 keV |
| Pulse Energy | 100–800 mJ |
| Pulse Width | 100 ns |
| Max Repetition Rate | 10 Hz at 15 kV, 5 Hz at 20 kV |
| Beam Cross-Section (Min) | 8 × 10⁻² cm² |
| Peak Power Density | 1.3 × 10⁸ W/cm² |
| Z-Axis Alignment Range | 50 mm |
| XY Alignment Range | ±20 mm |
| Spark Plug Lifetime | ~3 × 10⁷ pulses |
| Substrate Heater | Ø2" max / 10×10 mm² min |
| Substrate Rotation | 1–30 RPM (360° continuous) |
| Target Carousel | 6 × 1" or 3 × 2" targets |
| Target Grid Scanning | Programmable raster ablation pattern |
| Target Height Adjustment | Motorized |
| Target Shutters | Individual shutters per target to prevent cross-contamination |
| Process Gas Compatibility | O₂, N₂, Ar |
| Pulse Energy Stability | ±10% |
| Base Pressure | ≤8 × 10⁻⁸ Torr (with dry pump + turbomolecular pump) |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Ion-Assisted PLD System |
| Pricing | Upon Request |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Large-Area PLD Systems |
| Substrate Diameter | 4" (100 mm), 6" (150 mm), 8" (200 mm) |
| Chamber Type | 18-inch-diameter spherical or cylindrical vacuum chamber |
| Max. Substrate Temperature | 850 °C (for 4″), 750 °C (for 6″), 700 °C (for 8″) |
| Target Mount | 4 × 2-inch rotary target assembly |
| Thickness Uniformity | ±5% or better across full wafer |
| Process Gases | O₂, N₂, Ar with mass flow controllers (MFCs) |
| Load Lock | Integrated |
| Automation Platform | Windows 7 + LabVIEW 2013 |
| Laser Scanning | Programmable beam rastering with inverse-velocity dwell-time compensation |
| Oxygen-Compatible High-Temperature Operation | Yes |
| Brand | Neocera |
|---|---|
| Origin | Finland |
| Model | PED-120 |
| Vacuum Chamber | 12" Ø |
| Base Pressure | <1×10⁻⁶ Torr |
| Substrate Heater | 2" diameter, 950 °C max, ±1 °C stability |
| Target Capacity | six 1" or three 2" targets |
| Target-to-Substrate Distance | 4" |
| Gas Flow Control | 100 sccm MFC (O₂-compatible) |
| Turbo Pump | 260 L/s with cryo-trap |
| Roughing Pump | 4 m³/hr oil-free rotary vane |
| Electron Source | PEBS-20, 8–20 kV, 0.1–0.8 J/pulse, ~100 ns pulse width, ≤15 Hz rep rate, beam spot ≥6×10⁻² cm², energy density up to 1.3×10⁸ W/cm² |
| Z-axis travel | 50 mm, XY-axis travel: ±20 mm |
| Operating Lifetime | ≥10⁷ pulses |
| Max PEBS Housing Temp | 85 °C |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Pioneer 120 Advanced PLD System |
| Substrate Heating | Up to 850°C, Radiant Heater, O₂-Compatible |
| Substrate Size | 10 mm × 10 mm to 2-inch diameter |
| Vacuum Base Pressure | ≤5×10⁻⁹ Torr |
| Chamber Diameter | 12 inches |
| Target Capacity | 6×1″ or 3×2″ targets |
| Turbo Pump Speed | 260 L/s (software-controlled) |
| In-situ Diagnostics | RHEED-compatible |
| Load Lock | Optional |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 120 PLD System |
| Substrate Heater Type | Conductive (electrical) heating stage |
| Max Substrate Temperature | 950 °C |
| Heater Compatibility | O₂-compatible up to 1 atm (760 Torr) |
| Target Changer | Motorized, programmable multi-target rotator with rastering and position indexing |
| Vacuum System | Dry-pump stack — turbomolecular pump backed by diaphragm or scroll pump |
| Deposition Chamber Ports | 8" CF for pump, 8" CF for heater, 8" CF for target assembly |
| Laser Source | KrF excimer laser (248 nm) |
| Optical Path | 45° turning mirror, plano-convex lens (f ≈ 50 cm) |
| Control Software | Windows 7 + LabVIEW 2013 (integrated real-time control of heater, target rotation, pressure regulation, pump sequencing, and laser triggering) |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 Laser MBE/PLD System |
| Substrate Heating | 1000 °C (laser heater), 850 °C (radiant heater) |
| Substrate Size | 1 cm × 1 cm (laser-heated stage), 2″ diameter (radiant-heated stage) |
| Vacuum Chamber Diameter | 18″ |
| RHEED Gun Voltage | 30 keV |
| RHEED Operating Pressure | ≤500 mTorr (O₂) |
| Gas Flow Control | O₂/N₂ up to 100 SCCM |
| Software Platform | Windows 7 + LabVIEW 2013 |
| Target Mounting Options | 6 × 1″ or 3 × 2″ rotating target holder |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 MAPLE PLD System |
| Substrate Heating | Up to 500 °C with programmable controller |
| Substrate Size | Max. 2" diameter or multiple 1 cm × 1 cm samples |
| Substrate Rotation | 20 RPM |
| Vacuum Chamber Diameter | 18" |
| Target Stage | LN₂-cooled, single-target standard (multi-target optional) |
| Gas Flow Control | 50–100 SCCM MFC |
| Brand | Neocera |
|---|---|
| Origin | USA |
| Model | Pioneer 180 PLD System |
| Vacuum Base Pressure | ≤5×10⁻⁹ Torr |
| Chamber Diameter | 18 in |
| Max Substrate Size | 6 in |
| Max Target Capacity | 6×1″ or 3×2″ |
| Substrate Heater | Radiant, O₂-compatible up to 1 atm (760 Torr) |
| Max Substrate Temperature | 850 °C (upgradable to 1000 °C) |
| Turbo Pump Speed | 400 L/s (software-controlled) |
| In-situ Diagnostics Support | RHEED, LAXS, IES |
| Load-Lock Compatible | Yes |
| Multi-Source Integration Options | PED, RF/DC Sputtering, DC Ion Gun |
| UHV Cluster Integration Ready | XPS, ARPES, MBE |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PLD |
| Pricing | Available Upon Request |
| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SMART NanoFab |
| Pricing | Upon Request |
| Source Capacity | 4 or 8 effusion cells / e-beam sources |
| Integrated In-situ Monitors | RHEED, QCM, Linear Beam Flux Monitor |
| Growth Modes | Thermal Evaporation, E-beam Evaporation, RF Plasma, Pulsed Laser Deposition (PLD), Sputtering, Gas-Phase Precursor Delivery |
| Compatible Materials | III–V (e.g., GaAs, InP), II–VI (e.g., CdTe, ZnSe), II–Oxides (e.g., ZnO), III–Nitrides (e.g., GaN, AlN), and other compound semiconductors |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PLD-Workstation |
| Price Range | USD 650,000 – 13.5 million |
| Brand | SurfaceTech |
|---|---|
| Origin | Germany |
| Model | Laser MBE |
| Vacuum Class | Ultra-High Vacuum (UHV) |
| Base Pressure | ≤5×10⁻¹⁰ mbar (typical) |
| Substrate Heater | Resistive, 100–1000 °C (±0.5 °C stability) |
| Target Capacity | Up to 5 × 1-inch targets on rotating carousel |
| Laser Integration | Nd:YAG or excimer laser compatible (193–266 nm, pulse energy up to 500 mJ, repetition rate 1–10 Hz) |
| Load-Lock Capacity | 5 substrates + 2 target carousels |
| In-situ Diagnostics Ports | RHEED, OES, FTIR, QMS (CF-63/CF-100 flanges) |
| Automation Level | Fully programmable deposition sequence with real-time parameter logging and audit trail |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | SurfaceTech |
|---|---|
| Origin | Germany |
| Model | PLD-Workstation |
| Excimer Laser | Coherent COMPexPro 201F or 205F (248 nm) |
| Laser Gas | 20 L premixed KrF gas + 10 L He |
| Process Gases | 2× Mass Flow Controllers (MFC) |
| Substrate Heater | 2" up to 850 °C or 1"/3" up to 1000 °C |
| Substrate Rotation | 0–50 RPM |
| Target Carousel | 4×2" targets, rotation 0–50 RPM |
| Vacuum Chamber | Modular flanged design with multiple CF/NW ports |
| Control System | PC-based LabVIEW software with integrated TFT display |
| Dimensions | ~2200 × 850 × 1600 mm |
| Power Supply | 3×400 VAC/50 Hz or 3×208 VAC/60 Hz |
| Cooling | Integrated chiller unit |
| Compliance | CE-marked, Class 1 laser enclosure per IEC 60825-1 |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 35V14 |
| Pricing | Available Upon Request |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | 35-V-100 |
| Substrate Size | 4-inch |
| Source Capacity | Up to 10 effusion cells |
| Se Source Options | Point sources (200–2000 cm³), Linear source (8000 cm³) |
| Substrate Heater | High-temperature, uniform, programmable up to 700 °C |
| Vacuum System | Multi-pump configuration with integrated Se trap |
| Chamber Architecture | Modular design |
| In-situ Monitoring | Integrated quartz crystal microbalance (QCM) and optical emission spectroscopy (OES) |
| Compliance | Designed for GLP-compliant R&D environments |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | AccuFlux |
| Application | Real-time, non-invasive atomic beam flux monitoring in molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) systems |
| Simultaneous Channels | 4 elements |
| Minimum Detectable Growth Rate | <0.002 nm/s |
| Light Source Type | Element-specific hollow-cathode lamps |
| Optical Architecture | Self-referencing, self-aligning optical path |
| Source Compatibility | Solid-source effusion cells and gas-phase precursors |
| Environmental Robustness | Operable under high partial pressure conditions (e.g., As₂, PH₃, O₂) |
| Control Interface | Optional remote I/O module with real-time shutter and source feedback for closed-loop process control |
| Regulatory Alignment | Designed to support GLP-compliant data integrity and ASTM F1526-22 compliant thin-film process validation |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | IS4000 / IS6000 |
| Temperature Range (Pyrometer) | 450 °C – 1,300 °C |
| Temperature Range (Bandgap Module) | Room Temperature – 700 °C |
| Spectral Bands (Pyrometer) | 950 nm & 850 nm |
| Spectral Bands (Reflectometer) | 950 nm & 470 nm |
| NETD (Pyrometer) | < 0.5 °C |
| NETD (Thickness) | < 1 nm @ film > 100 nm |
| Spot Size | Ø2.75″ CF flange (optional Ø4.5″ CF with edge mount) |
| Dimensions | 100 × 140 × 130 mm |
| Minimum Target Distance | > 7 mm |
| Substrate Compatibility | Si, GaAs, InP, Sapphire, STO, GaSb, MCT, ZnO, GaN, ZnTe, SiC, CIGS |
| Interface | RS-232 serial |
| OS Requirement | Windows XP or later |
| Compliance | Designed for GLP/GMP-aligned process environments |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | CL/HL/HT Series |
| Temperature Range | 0 °C to 1,400 °C |
| Power | 600 W or 1 kW |
| Temperature Stability | ±0.1 °C |
| Temperature Repeatability | ±0.1 °C |
| Thermocouple | Type C (Type D optional) |
| Crucible Capacity | 16–80 cm³ |
| Standard Flange | 2.75″ or 4.5″ OD-CF |
| Standard Length | 12″ (305 mm) |
| Filament | Amphenol annular filament |
| Thermocouple Connector | Omega subminiature |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | SVT-35 Series (e.g., 35-6, 35-N, 35-G-4, SM-6, S-8, 35-D, SVT-V, NanoFab, UVD-02, PLD-02, 35V14, 26-O-V) |
| Base Vacuum | < 1×10⁻¹⁰ Torr |
| Substrate Size Options | 2″, 3″, 4″, 6″, 8″, or multiple small wafers (up to 14″ in 35V14) |
| Source Capacity | Up to 10 effusion cells (standard), plus optional RF plasma sources, cracking cells, e-beam evaporators, or liquid-source injectors |
| Chamber Architecture | Modular UHV system with load-lock, prep/analysis chamber, and main growth chamber |
| Compliance | Designed for ASTM F1529, ISO 14644-1 Class 4 cleanroom integration, and GLP/GMP-aligned process documentation workflows |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | PLD-01 / PLD-02 |
| Chamber Diameter | 12" (305 mm) |
| Base Pressure | ≤5×10⁻⁸ Torr (with 250 L/s turbomolecular pump) |
| Target Mount | 6×1" (25 mm) rotating and Z-adjustable |
| Substrate Holder | 1" (25 mm), heated to 800 °C (1000 °C optional), rotation & Z-motion enabled |
| In-situ Monitoring | Quartz Crystal Microbalance (QCM) deposition rate monitor |
| Optional Add-ons | RHEED, differential pumping, laser beam scanning, RF plasma source (O₂/N₂), load-lock integration, L-MBE upgrade |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model Options | 2.75", 4.5", 6.0" CF Flange |
| RF Power Range | 200–600 W |
| Gas Flow Range | 0.1–10 SCCM (N₂, O₂, H₂) |
| Plasma Chamber Materials | Pyrolytic Boron Nitride (PBN), Alumina, Quartz |
| Cooling | Water, 0.17 GPM (0.227 m³/hr) |
| Plasma Viewing Window | Integrated |
| Aperture & Cavity Geometry | Customizable |
| RF Matching | Manual (Auto-tuning optional) |
| Plasma Beam Composition | Predominantly neutral atomic species, negligible ion energy (<5 eV) |
| Typical Growth Rate | >4 µm/hr for nitride/oxide films |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | RHEED |
| Electron Beam Energy | 10 keV |
| Filament Current | 3 A |
| Emission Current | 5 A |
| Spot Size | 1.0 mm at 17″ (432 mm) working distance |
| Maximum Bakeout Temperature | 230 °C |
| Flange Options | 2.75″ and 4″ CF |
| Detector | High-Resolution CCD or Scientific CMOS Camera |
| Software | Real-Time RHEED Image Analysis Suite (2D/3D intensity profiling, oscillation tracking, growth rate calculation) |
| Magnetic Shielding | Integrated mu-metal housing for electron optics |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | SVT-AH |
| Heating Principle | Electron-beam heated tungsten/molybdenum filament |
| Max Filament Temperature | 2873 K |
| Emission Current | Up to 100 mA |
| Power Supply Requirement | 300 W |
| Filament Current | 15 A |
| Vacuum Interface | 2.75″ (70 mm) CF flange |
| Compatible With | Standard MBE Systems via Adaptable Flange Kits |
| Recommended Power Supply | SVTA-H1-PS (Triply Integrated: High-Voltage Bias, High-Current Filament, and Emission Control with Beam Current Monitoring & Display) |
| Brand | SVT Associates |
|---|---|
| Origin | USA |
| Model | SVT-DF |
| Interface | 4.5″ or larger Conflat (CF) flange |
| Temperature Range | 0 °C to 1,400 °C |
| Power Rating | 600 W / 1 kW |
| Temperature Stability | ±0.1 °C |
| Temperature Reproducibility | ±0.1 °C |
| Thermocouple Type | Type C (Type D optional) |
| Crucible Capacities | 16 cc, 20 cc, 22 cc, 40 cc, 60 cc, 85 cc, 150 cc |
| Standard Length | 12″ (304.8 mm) |
| Flange Options | 2.75″ or 4.5″ OD CF |
| Filament Connector | Amphenol ring-type |
| Thermocouple Connector | Omega subminiature |