Electron Beam Lithography System
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| Brand | Allresist |
|---|---|
| Origin | Germany |
| Type | Imported Chemical Reagent |
| Product Line | AR-N (Negative Tone), AR-P (Positive Tone), CAR (Chemical Amplified Resist), E-Beam Resists |
| Compliance | ISO 9001-certified manufacturing, compatible with standard cleanroom protocols (Class 100/ISO 5) |
| Packaging Options | 30 mL, 100 mL, 250 mL, 1 L, 2.5 L |
| Storage | Light-sensitive, refrigerated (2–8 °C), nitrogen-purged sealed containers |
| Brand | NS (Nippon Seiko) |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | IBE |
| Price Range | USD 210,000 – 280,000 |
| Sample Diameter | 3"–6" φ |
| Max. Ion Incidence Angle | ±90° |
| Ion Source | Kaufman-type KDC-40 / KDC-75 / KDC-160 (KRI, USA) |
| Ultimate Vacuum | ≤1×10⁻⁴ Pa (4IBE/7.5IBE/16IBE/20IBE), ≤8×10⁻⁵ Pa (MEL 3100) |
| Turbomolecular Pump | Pfeiffer (350 L/s or 1250 L/s) |
| Etch Uniformity | ≤±5% |
| Cooling | Direct substrate cooling |
| Motion System | Dry Chuck Planet (planetary rotation + revolution) |
| Etch Mode | Physical sputtering (Ar⁺ beam), non-reactive, anisotropic |
| Origin | Jiangsu, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model Variants | Quartz / Silicon / Polymer Templates |
| Pricing | Available Upon Request |
| Template Materials | Fused Silica (Quartz), Single-Crystal Silicon, Silicon Nitride (SiNₓ), Silicon Carbide (SiC), Borosilicate Glass |
| Max Template Diameter | 100 mm (4″) |
| Minimum Feature Size | 50 nm (for ≤2″ area) |
| EBL Service Capability | Down to 30 nm feature size |
| Substrate Compatibility | Conductive (e.g., Si, GaAs, InP) and Non-Conductive (e.g., SiO₂/Si, quartz, polymer-coated wafers) substrates |
| Fabrication Scope | Micro- and nanoscale patterning on Si, III–V (GaAs, InP), II–VI (ZnS, CdTe), and polymer substrates |
| Origin | Hong Kong |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Mainland China Made |
| Model | Holimatrix |
| Price Range | USD 140,000 – 210,000 |
| Brand | JC Nabity |
|---|---|
| Origin | USA |
| Model | NPGS V9.2 |
| Minimum Feature Size | 10 nm |
| Electron Beam Diameter | ≤1 nm |
| Accelerating Voltage Range | 0–40 kV |
| Control Interface | PCIe-516A High-Speed Lithography Board |
| Host Compatibility | Commercial SEM, STEM, or FIB Systems |
| Operating System | Windows 10 |
| Pattern Design Software | QCAD |
| Beam Blanking Frequency | Up to 5 MHz |
| Brand | JEOL |
|---|---|
| Origin | Japan |
| Model | JBX-9500FS |
| Acceleration Voltage | 100 kV |
| Maximum Substrate Size | 300 mm Ø wafers or 6-inch masks |
| Maximum Field Size | 1000 µm × 1000 µm |
| Stage Travel Range | 260 mm × 240 mm |
| Minimum Positioning Unit (LBC) | 0.15 nm (λ/4096) |
| Overlay Accuracy | ≤ ±11 nm |
| Field Stitching Accuracy | ≤ ±10 nm |
| In-Field Placement Accuracy | ≤ ±9 nm |
| Position DAC Resolution | 20-bit |
| Scan DAC Resolution | 14-bit |
| Scan Step Size | 0.25 nm |
| Maximum Scan Rate | 100 MHz |
| Electron Source | ZrO/W Schottky Emitter |
| Brand | MICROTECH |
|---|---|
| Origin | Italy |
| Model | LW405D / LW405E |
| Minimum Feature Size | 0.3–0.5 µm (material- and environment-dependent) |
| Beam Acceleration Voltage | 30 kV |
| Wavelength Options | 405 nm, 375 nm, 365 nm, and optional 213 nm DUV source |
| Brand | MICROTECH |
|---|---|
| Model | ulaser/ilaser |
| Minimum Feature Size | 2 µm |
| Laser Spot Diameter | 1 µm |
| Acceleration Voltage | 30 kV |
| Origin | Imported |
| Configuration | Integrated desktop platform with fully automated control |
| Compliance | Designed for R&D and pilot-line semiconductor fabrication environments |
| Brand | Moorfield |
|---|---|
| Origin | United Kingdom |
| Model | nanoETCH |
| RF Power Range | <30 W (milliwatt-resolution control) |
| Base Pressure | <5×10⁻⁷ mbar |
| Sample Stage Options | 3-inch & 6-inch |
| Vacuum System | Turbomolecular pump with optional backing pump |
| Gas Delivery | Mass Flow Controller (MFC)-regulated |
| Control Interface | Integrated touchscreen HMI with programmable etch recipes |
| Data Logging | PC-compatible USB/Ethernet interface |
| Safety Compliance | CE, IEC 61000-6-4, IEC 61000-6-2 |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | P130 / S130 |
| Price Range | USD 280,000 – 420,000 |
| UV Light Source | 405 nm LED |
| XY Resolution | 2–10 µm |
| Layer Thickness | 5–20 µm |
| Build Volume (P130) | 3.84 × 2.16 × 10 mm (Mode 1) / 38.4 × 21.6 × 10 mm (Mode 2) / 50 × 50 × 10 mm (Mode 3) |
| Build Volume (S130) | Up to 100 × 100 × 50 mm |
| Optical System | High-NA Projection Micro-Lithography Optics |
| Post-Processing | Integrated Vacuum Despersion + UV Curing Station |
| Power Requirement | 200–240 V AC, 50/60 Hz, 3 kW |
| Weight | 450 kg |
| Dimensions | 1720 × 650 × 1820 mm |
| Origin | Jiangsu, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Regional Origin | Domestic (PRC) |
| Model | Custom Grating Fabrication |
| Pricing | Available Upon Technical Consultation |
| Brand | Nanoscribe |
|---|---|
| Country of Origin | Germany |
| Model | Photonic Professional GT2 |
| Category | Two-Photon Polymerization (TPP) Microfabrication System |
| Automation Level | Fully Automated |
| User Interface | Intuitive Graphical Workflow Environment |
| Compliance Framework | Designed for ISO 14644-1 Class 5 cleanroom integration |
| Software Architecture | Windows-based, FDA 21 CFR Part 11–ready audit trail support (optional configuration) |
| Brand | NILT |
|---|---|
| Origin | Denmark |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | CN1 |
| Price Range | USD 7,000 – 14,000 (FOB Copenhagen) |
| Minimum Feature Size | 20 nm |
| Thermal Imprint Temperature | 200 °C (upgradable to 240 °C) |
| UV Wavelength | 365 nm |
| Pressure Range | 0.3–11 bar |
| Vacuum Level | down to 0.1 mbar |
| Substrate/Template Max Diameter | 100 mm (4-inch), upgradable to 200 mm (8-inch) |
| Control | Fully computer-programmed, GUI-driven operation |
| Brand | NILT |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | CNI |
| Price Range | USD 42,000–70,000 (FOB) |
| Minimum Feature Size | <20 nm |
| Imprint Area Compatibility | 2-inch to 4-inch wafers (customizable) |
| Heating/Cooling Rate | Rapid thermal cycling (<60 s ramp-up/down) |
| Vacuum Requirement | 0.4–0.8 bar (vacuum flow ≥1 mL/min) |
| Pneumatic Supply | Compressed air or N₂ at 6–10 bar |
| Electrical Input | 110–240 V AC, 50–60 Hz, ≥200 W |
| Brand | NS (Japan) |
|---|---|
| Origin | Japan |
| Model | 20-M/NS-8 |
| Minimum Feature Size | 1 µm |
| Ion Beam Diameter | 1 µm |
| Acceleration Voltage Range | 1–5 kV (typical for Kaufman-type sources) |
| Substrate Capacity | 8 × Ø76 mm or 6 × Ø100 mm |
| Ion Source | 20 cm Kaufman-type Broad-Beam Ion Source (KRI, USA) |
| Cooling | Direct substrate cooling via integrated chiller interface |
| Motion Control | Planetary rotation (rotation + revolution) for uniform etch rate distribution |
| Power Supply | WELL-5000 (compatible with domestic replacements) |
| Compliance | CE-marked architecture |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | 4 IBE |
| Sample Holder | 4" φ, single wafer |
| Ion Incidence Angle | 0° to ±90° |
| Ion Source | KDC-40 Kaufman-type (KRI, USA) |
| Base Pressure | ≤1×10⁻⁴ Pa |
| Turbomolecular Pump | Pfeiffer, 350 L/s |
| Etch Uniformity | ≤±5% |
| Cooling | Direct substrate cooling |
| Motion Control | Planetary rotation (rotation + revolution) |
| Gas Compatibility | Ar, O₂, N₂, CF₄, Xe, and mixed process gases |
| Brand | NS (Nippon Seiko) |
|---|---|
| Origin | Japan |
| Model | NS-8 |
| Minimum Feature Size | ≤1 µm |
| Ion Beam Diameter | ≤1 mm |
| Acceleration Voltage Range | 0.5–2 kV |
| Substrate Capacity | 3″ wafers × 8 pcs or 4″ wafers × 6 pcs |
| Stage Cooling | Direct-contact liquid-cooled chuck (20 cm diameter) |
| Ion Source | Kaufman-type broad-beam ion source (OEM from Kimball Physics / original Kaufman design heritage) |
| Beam Tilt Adjustment | ±15° continuous RF-driven angular control |
| Substrate Motion | Dual-axis rotation (planetary motion: rotation + revolution) |
| Power Supply Compatibility | 200–240 VAC, 50/60 Hz (field-replaceable with domestic-standard AC input modules) |
| Origin | Japan |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | 10-M/NS-5 |
| Price Range | USD 135,000 – 205,000 |
| Substrate Diameter | 6-inch (150 mm) |
| Cooling | Direct substrate cooling with independent ion source cooling |
| Ion Source | 10 cm Kaufman-type ion source (KRI OEM) |
| Power Supply | WELL-2000 (compatible with domestic AC input upon request) |
| Beam Tilt | Adjustable RF-driven angular control (0°–90°) |
| Motion Control | Planetary rotation (substrate revolution + spin) |
| Process Environment | High-vacuum compatible (≤1×10⁻⁵ Pa base pressure, typical operating range 1×10⁻⁴–5×10⁻³ Pa) |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | NS-5 |
| Ion Source Type | Kaufman-type |
| Beam Diameter | 10 cm |
| Sample Stage Cooling | Direct-contact cryogenic cooling |
| Stage Motion | Combined rotation and revolution |
| Beam Tilt Adjustment | Fully variable (0–90°) |
| Application Scope | R&D and low-volume production |
| Substrate Compatibility | Up to 6-inch diameter wafers |
| Power Supply Compatibility | Interchangeable with domestic 220 V / 50 Hz AC input |
| Compliance | Designed for ISO Class 5 cleanroom integration |
| Origin | Denmark |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Uni A6 DT |
| Price Range | USD 68,000 – 109,000 |
| Brand | Raith |
|---|---|
| Origin | Germany |
| Model | Pioneer Two |
| Electron Source | Thermal Field Emission Gun |
| Accelerating Voltage Range | 20 V – 30 kV |
| Minimum Guaranteed Resolution (Line Width) | ≤8 nm |
| Stage Travel (X/Y/Z) | 50 mm × 50 mm × 25 mm |
| XY Positioning Accuracy | ±2 nm |
| Overlay/Pattern Stitching Accuracy | ≤50 nm |
| Imaging Magnification Range | 20× – 1,000,000× |
| Optional Add-ons | Backscattered Electron Detector (BSED), Energy-Dispersive X-ray Spectrometer (EDS), Tilt-Rotation Stage Module |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SI 500 |
| Price | USD 295,000 (FOB Hamburg) |
| RF Source Frequency | 13.56 MHz |
| ICP Power | 1200 W |
| Bias RF Power | 600 W |
| Plasma Source | Planar Triple Spiral Antenna (PTSA) |
| Endpoint Detection | Interferometric In-situ Monitoring |
| Vacuum System | High-throughput Dry Pumping with Independent Gas Flow & Pressure Control |
| Software | SENTECH Advanced Plasma Process Control (APPC) v5.x |
| Brand | Stensborg |
|---|---|
| Origin | Denmark |
| Model | HoloPrinter |
| Minimum Feature Size | 2 µm |
| Electron Beam Diameter | 1 µm |
| Accelerating Voltage Range | 30 kV |
| Brand | TERA |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Instrument |
| Model | TERA-FAB E |
| Minimum Feature Size | 200 nm |
| Electron Beam Equivalent Resolution (via PPL) | <100 nm |
| Accelerating Voltage Range | 30 kV |
| Note | This is a *polymer pen lithography* system — not an electron beam lithography (EBL) instrument |
| Brand | TERA |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | TERA-FAB M |
| Minimum Feature Size | 100 nm |
| Electron Beam Equivalent Spot Size | 100 nm |
| Acceleration Voltage Range | 30 kV |
| Origin | Denmark |
|---|---|
| Manufacturer Type | Distributor |
| Origin Category | Imported |
| Model | uni A6 |
| Price Range | USD 70,000 – 112,000 |
| Brand | WOP/Workshop of Photonics |
|---|---|
| Origin | Lithuania |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | FemtoLAB |
| Price Range | USD 560,000 – 700,000 |
| Brand | ZEPTOOLS |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | ZEL304G |
| Pricing | Available upon request |
| Electron Source | Schottky field-emission gun |
| Acceleration Voltage | 20 V–30 kV |
| Image Resolution | ≤1 nm @ 15 kV, ≤1.5 nm @ 1 kV |
| Minimum Beam Spot Size | ≤2 nm |
| Beam Current | ≥100 nA |
| Beam Current Density | >7000 A/cm² |
| Beam Blanking Rise Time | <100 ns |
| Writing Field | ≥500 × 500 µm |
| Minimum Single-Exposure Line Width | <15 nm |
| Stage Travel | ≥105 mm |
| Stitching Accuracy | <50 nm (mean + 1σ) |
| Overlay Accuracy | <50 nm (mean + 1σ) |
| Scan Rate | ≥20 MHz (standard), up to 50 MHz (max) |
| D/A Resolution | 20-bit |
| Dwell Time Increment | 10 ns |
| Supported File Formats | GDSII, DXF, BMP |
| Scan Modes | Raster (Z-scan), serpentine (S-scan), spiral vector scanning |
| Exposure Modes | Field calibration, field stitching, multi-layer overlay, auto-exposure sequencing |
| Optional Features | Proximity effect correction (PEC), laser interferometric stage, Faraday cup beam current monitor, TTL-compatible beam blanking (5 V), external I/O for synchronized stage motion, beam blanking, SE detection, and scan control |