合肥科晶
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| Brand | 合肥科晶 |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | VGF-GaAs-2INCH-N-TE |
| Price | Upon Request |
| Growth Method | Vertical Gradient Freeze (VGF) |
| Crystal Orientation | <100> ±0.5°, 2° off toward <101> |
| Diameter × Thickness | 2 inch (50.8 mm) × 0.5 mm |
| Surface Finish | Single-side polished (SSP) |
| Doping Type | N-type, Tellurium (Te) |
| Carrier Concentration | (1.5–26) × 10¹⁷ cm⁻³ |
| Electron Mobility | 2700–3600 cm²/V·s |
| Resistivity | 9 × 10⁻⁴ – 1.1 × 10⁻² Ω·cm |
| Etch Pit Density (EPD) | < 8 × 10³ cm⁻² |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags within Class 1000 cleanroom environment, or individual wafer cassettes |