AIXTRON
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| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX 2800G4-TM |
| Heating Method | Hot-Wall |
| Internal Chamber Dimensions | 15 × 4 in & 8 × 6 in |
| Reactor Configurations | 42 × 2 in / 11 × 4 in / 6 × 6 in |
| Wafer Throughput | High |
| Process Cycle Time | Rapid |
| Uniformity & Stability | Optimized for Production Yield |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5 WW C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm (8×150 mm configuration) |
| Reactor Type | Planetary Rotating Reactor with Hot Wafer Transfer |
| Temperature Control | Wafer-Level |
| Process Automation | Cassette-to-Cassette Handling |
| Uniformity Control | AutoSat™ Dynamic Saturation Compensation |
| Factory Interface | SECS/GEM compliant |
| Deposition Rate | ~nm/min (material- and process-dependent) |
| Application Focus | SiC, GaN, and other compound semiconductor epitaxy |
| Compliance | Designed for integration into ISO Class 5–7 cleanroom environments and compatible with SEMI S2/S8 safety and automation standards |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5+ C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm & 200 mm (Si, Sapphire, SiC) |
| Operating Pressure | Several mTorr |
| Deposition Rate | Up to several nm/min (material-dependent) |
| Reactor Type | Batch-mode with axial symmetry |
| Wafer Bow Control | Optimized via low-thermal-flux “warm ceiling” design |
| Temperature Uniformity | Minimized vertical thermal gradient for reduced wafer curvature |
| Configurable Substrate Holder | Customer-specific cavity design for precise wafer temperature profiling |
| Capacity | 8×150 mm or 5×200 mm wafers |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Equipment Type | Metalorganic Chemical Vapor Deposition (MOCVD) System |
| Reactor Architecture | Close-Coupled Showerhead® with Triple-Zone Heater |
| Maximum Substrate Temperature | 1400 °C |
| Substrate Configurations | 3×2″, 6×2″, 19×2″ wafers |
| In-situ Monitoring Options | LayTec EpiTT / EpiCurve®, AIXTRON Argus® Full-Wafer Temperature Mapping, AIXTRON Epison® Gas Concentration Sensor |
| Footprint | Compact Design for Lab and Pilot-Line Integration |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Software Platform | AIXTRON ProcessSuite™ with Audit Trail & Electronic Signature Support (21 CFR Part 11 compliant) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | Customized |
| Heating Method | Tungsten Filament with Triple-Zone Temperature Control (up to 1400 °C) |
| Substrate Compatibility | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Reaction Chamber | Adjustable showerhead-to-substrate spacing (5–25 mm) |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Scope | Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI compound semiconductors |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with semiconductor fab infrastructure (SEMI S2/S8, SEMI E10) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10 |
| Heating Method | Hot-Wall |
| Substrate Sizes | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch (carrier exchange supports 6×2 inch, 3×3 inch, 1×6 inch) |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Temperature Control | Triple-zone tungsten filament heating, up to 1400 °C |
| Showerhead-to-Substrate Spacing | Adjustable from 5 mm to 25 mm |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Domain | Semiconductor thin-film epitaxy |
| Film Types | Metallic and compound semiconductor layers (e.g., Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10-SiC |
| Wafer Compatibility | 150 mm & 200 mm |
| Application Focus | SiC Epitaxy for Power Devices |