Annealsys
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| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-master |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 200 mm (8-inch wafers) |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Gas Lines | 4-channel MFC-controlled (N₂, Ar, O₂, custom mix) |
| Heating Source | Halogen infrared lamps with power-based regulation |
| Chamber | Water-cooled quartz tube with double-wall stainless-steel cold-wall construction |
| Temperature Monitoring | Dual K-type thermocouples + dual pyrometers (low-range: 150–1100 °C |
| high-range | 400–1500 °C) |
| Cooling Method | Forced-air (low-noise, no compressed air required for thermal cycling) |
| Power Supply | 3×400 V + N + PE, 75–105 kW |
| Cooling Water | 2–4 bar, ΔP ≤1 bar, flow rate 30–50 L/min |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-master |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 200 mm (8-inch wafers) |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa |
| Gas Lines | 4-channel MFC-controlled (N₂, Ar, O₂, custom mix) |
| Heating Source | Halogen infrared lamps with power-based regulation |
| Chamber | Water-cooled quartz tube with double-wall stainless-steel cold-wall construction |
| Temperature Monitoring | Dual K-type thermocouples + dual pyrometers (low-range: 150–1100 °C |
| high-range | 400–1500 °C) |
| Cooling Method | Forced-air (low-noise, no compressed air required for thermal cycling) |
| Control System | Digital PID with real-time feedback loop |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Micro |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Size | 3-inch (76 mm) diameter or square |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Heating Source | IR Halogen Lamps |
| Cooling Method | Forced-air (low-noise, no compressed air required) |
| Chamber Design | Dual-chamber optional |
| Vacuum Capability | Compatible with turbomolecular pump for ≤10⁻⁶ mbar base pressure |
| Control Interface | Ethernet-connected PC software with full PID programmability |
| Gas Handling | Up to 3 process gases, digitally controlled mass flow controllers (MFCs) |
| Thermocouple Configuration | Dual N-type (center + edge) for direct wafer-temperature feedback |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Micro |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Size | 3-inch (76 mm) diameter or square |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Control Interface | Ethernet-connected PC-based software with full programmable ramp/soak profiles |
| Chamber Design | Dual-chamber option available |
| Cooling Method | Forced-air (low-noise, no compressed air required) + water-cooled quartz chamber walls |
| Heating Source | Array of IR halogen lamps with power-controlled (not voltage-controlled) regulation |
| Thermocouple Configuration | Dual N-type thermocouples — center + edge placement for direct wafer-temperature feedback |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) and needle-valve purging |
| Optional Accessories | SiC-coated graphite susceptor, molecular pump integration, cold-wall double-chamber architecture |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch) |
| Temperature Range | Up to 1200 °C |
| Max. Heating Rate | 160 K/s |
| Max. Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | 10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Standard Optical Viewport | Fused silica |
| Thermometry | Dual-range pyrometer (150–1100 °C and 400–1500 °C), K-type thermocouple backup |
| Control System | Digital PID with real-time feedback loop |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Instrument Type | High-Vacuum Rapid Thermal Annealing (RTA) Furnace |
| Sample Diameter | 150 mm (6-inch wafer) |
| Temperature Range | Up to 1200 °C |
| Max. Ramp Rate | 160 K/s |
| Max. Cool-down Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Heating Source | Array of high-power infrared lamps (18 lamps, 34 kW total) |
| Temperature Measurement | Dual-range pyrometry (150–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time feedback loop |
| Compliance | Designed for GLP/GMP-aligned semiconductor R&D and pilot-line fabrication |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch) |
| Temperature Range | Up to 1200 °C (standard), up to 1300 °C (optional high-temp configuration) |
| Max. Heating Rate | 160 K/s |
| Max. Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Lamp Configuration | 18 high-power infrared lamps (34 kW total) |
| Chamber Dimensions | Ø200 mm × 25 mm |
| Temperature Sensing | Dual-range pyrometry (400–1100 °C & 400–1500 °C) + K-type thermocouple |
| Controller | Digital PID with real-time thermal profiling |
| Footprint | 510 mm × 1425 mm × 800 mm |
| Weight | 240 kg |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 150 mm (6-inch wafers) |
| Temperature Range | Up to 1200 °C (standard), up to 1300 °C (optional high-temp configuration) |
| Max Heating Rate | 160 K/s |
| Max Cooling Rate | 240 K/s |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | 1 × 10⁻⁶ Torr (with turbomolecular pump) |
| Process Gas Control | 5-channel MFC system |
| Lamp Configuration | 18 high-power infrared lamps (34 kW total) |
| Chamber Dimensions | Ø200 mm × 25 mm |
| Temperature Sensing | Dual-range pyrometry (400–1100 °C and 400–1500 °C) + K-type thermocouple |
| Control System | Digital PID with real-time thermal profiling |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-ONE |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Max Temperature | up to 1450°C (100HT version) |
| Max Ramp Rate | up to 200°C/s |
| Vacuum Capability | High vacuum (base pressure <1×10⁻⁶ mbar with optional turbo pump) |
| Cooling | Forced gas quench or passive cooling |
| Control | Dual-sensor (thermocouple + pyrometer), digital PID, Ethernet-enabled PC interface |
| Gas Lines | Up to 5 independent channels with digital mass flow controllers (MFCs) |
| Chamber | Stainless steel cold-wall design with infrared halogen tubular lamps |
| Substrate Compatibility | Ø50–300 mm wafers and non-standard substrates (glass, metal, polymer, graphite, SiC susceptors) |
| Compliance | Designed for ISO/IEC 17025-compliant labs |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-One 100 / AS-One 150 |
| Max Temperature | Standard: up to 1250°C |
| High-Temp Option | up to 1450°C |
| Temperature Accuracy | ±1% of setpoint |
| Max Power | 30 kW (34 kW peak) |
| Ramp Rate | up to 200°C/s |
| Cooling Rate | up to 100°C/s |
| Heating Method | IR radiation with quartz lamp array |
| Chamber Internal Diameter | 100 mm (4-inch) for AS-One 100 |
| Vacuum Range | Atmospheric to 1×10⁻⁶ Torr |
| Gas Lines | Up to 5 MFC-controlled process gases + 1 purge line |
| Control System | Full PC-based Windows software with recipe management (up to 100 steps per recipe), real-time data logging, and audit-trail-capable HMI |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Premium |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6") / 200 mm (8") / 300 mm (12") wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/s (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Base Pressure | ≤ 1 × 10⁻⁶ hPa (with turbo-molecular pump and load-lock) |
| Heating Configuration | Dual-side (top & bottom) halogen lamp array |
| Susceptor Materials | Graphite or SiC-coated graphite |
| Process Atmosphere | Inert (N₂, Ar), oxidizing (O₂), reducing (H₂/N₂), or vacuum |
| Standard Temperature Monitoring | Dual-channel pyrometry + optional thermocouple |
| Control System | SIMATIC S7-based PLC with 7" HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | AS-Premium |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6") / 200 mm (8") / 300 mm (12") wafers (configurable) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-Down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | ±1% of setpoint |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Base Pressure | ≤1×10⁻⁶ hPa (with turbomolecular pump and load-lock) |
| Heating Configuration | Dual-side (top + bottom) halogen lamp array |
| Standard Temperature Sensors | Pyrometer (non-contact, real-time wafer surface monitoring) + Embedded thermocouple (susceptor reference) |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen interface |
| Programmable Recipes | Up to 50 stored profiles, each with up to 50 temperature/time/gas/vacuum segments |
| Gas Delivery | 4-channel MFC-controlled (N₂, Ar, O₂, forming gas, etc.) |
| Cooling | Water-cooled chamber + N₂ backside purge for substrate quenching |
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | 4-channel MFC-controlled process gas lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤ 1 × 10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | Up to 4 MFC-controlled process lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7-inch HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Product Type | Rapid Thermal Processing (RTP) Furnace |
| Temperature Range | Up to 2000°C (Zenith series) |
| Heating Rate | >250°C/s (AS-Micro) |
| Vacuum Capability | Down to 10⁻⁶ Torr (AS-Master) |
| Sample Diameter Support | 2 mm to 200 mm |
| Chamber Type | Cold-wall stainless steel or quartz tube |
| Heating Source | Halogen lamp array or tungsten filament |
| Temperature Measurement | Dual-sensor (pyrometer + thermocouple) |
| Control System | Digital PID with auto-tuning |
| Compliance | Designed for GLP/GMP-aligned lab environments, compatible with ASTM F1531 (RTP process validation), ISO 14644-1 Class 5 cleanroom integration |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | JetLight |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | Up to 3-inch (76 mm) diameter wafers |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Control Interface | Ethernet-connected PC-based software with programmable ramp/soak profiles |
| Chamber Design | Dual-chamber option available |
| Heating Source | Array of IR halogen lamps with power-controlled (not voltage-controlled) regulation |
| Cooling Method | Forced-air cooling (low-noise, no compressed air required) |
| Chamber Material | Quartz tube within double-walled stainless-steel cold-wall structure with water-cooled jacket |
| Thermocouple Configuration | Dual N-type thermocouples — center and edge mounted for direct wafer-temperature feedback |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) and precision needle valves |
| Optional Accessories | SiC-coated graphite susceptor, high-vacuum turbomolecular pump, dual-chamber configuration |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | JetLight |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | Up to 3-inch (76 mm) diameter wafers |
| Temperature Range | Ambient to 1450 °C |
| Max Heating Rate | 150 °C/s |
| Max Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Vacuum Capability | Compatible with turbomolecular pumping systems |
| Heating Source | Array of IR halogen lamps |
| Cooling Method | Forced-air (low-noise, no compressed air required) |
| Chamber Design | Cold-wall, water-cooled quartz chamber with dual stainless-steel enclosure |
| Control Interface | Ethernet-connected PC-based software with programmable ramp/soak profiles |
| Gas Handling | Up to 3 process gases with digital mass flow controllers (MFCs) |
| Optional Configurations | SiC-coated graphite susceptor, molecular pump integration, dual-chamber architecture |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model Series | RTP/RTCVD, DLI-CVD, DLI-ALD |
| Temperature Range | 0–2000 °C |
| Max. Ramp Rate | 250 °C/s |
| Cool-down Rate | 250 °C/s |
| Vacuum Capability | Down to 10⁻⁶ Torr |
| Heating Technology | Halogen Lamp (RTP), Tungsten Heater (Zenith), Dual-Side IR (AS-Premium) |
| Chamber Type | Cold-wall stainless steel or quartz tube |
| Substrate Compatibility | 2″ to 200 mm wafers, custom substrates, compound semiconductors |
| Compliance | Designed for GLP/GMP-aligned labs |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | Zenith-100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 6-inch (150 mm) |
| Temperature Range | 0–2000 °C |
| Maximum Heating Rate | 150 °C/s |
| Maximum Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Chamber | Stainless steel, water-cooled, cold-wall design |
| Heating Elements | High-purity tungsten |
| Atmosphere Compatibility | Vacuum, inert (N₂, Ar), or reducing (H₂/N₂) |
| Standard Temperature Sensors | Dual-mode — calibrated pyrometer (for >600 °C) and type C thermocouple (for full range) |
| Control System | Fast-response digital PID controller with real-time thermal profile logging |
| Vacuum Requirement | Turbo-molecular pump mandatory (roughing pump included) |
| Optional Upgrades | Automated pressure control with throttle valve, SiC- or graphite-coated susceptors, CVD-compatible gas inlets |
| Brand | Annealsys |
|---|---|
| Origin | France |
| Model | Zenith-100 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Sample Diameter | 6-inch (150 mm) |
| Temperature Range | 0–2000 °C |
| Maximum Heating Rate | 150 °C/s |
| Maximum Cooling Rate | 200 °C/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±1% across wafer surface |
| Chamber Construction | Stainless steel, water-cooled cold-wall design |
| Standard Atmospheres | High vacuum, inert (N₂, Ar), reducing (H₂/N₂ mix) |
| Mandatory Pumping | Turbo-molecular pump required |
| Temperature Sensors | Dual-mode — calibrated pyrometer (for >600 °C) and type C thermocouple (for full range) |
| Control System | Digital PID with real-time feedback and ramp-soak profiling |
| Compliance | Designed for GLP-compliant R&D environments |