ASML
Filter
Showing all 5 results
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | 1460K |
| Type | Contact/Proximity Mask Aligner |
| Application | R&D and low-volume semiconductor prototyping, MEMS, microfluidics, academic cleanroom fabrication |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Product Category | Mask Aligner / Stepper-Based Lithography System for Semiconductor Fabrication |
| Models | TWINSCAN XT:1900Gi, XT:2000i, NXT:1980Di, NXT:2050i, NXE:3400B/C, NXE:3600D, EXE:5000 Series |
| Light Source Wavelengths | 248 nm (KrF), 193 nm (ArF dry & immersion), 13.5 nm (EUV) |
| Single-Exposure Resolution | 38 nm (ArF immersion), 13 nm (EUV, NA=0.33), 8 nm (High-NA EUV, NA=0.55) |
| Throughput | Up to 275 wafers/hour (NXT:2050i), ~170 wafers/day (NXE:3400C), target 220 wafers/day (EXE:5000) |
| Supported Process Nodes | 28 nm to sub-2 nm |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 safety standards, compatible with 300 mm wafer handling automation (SECS/GEM) |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Type | Mask Aligner / Stepper / Scanner |
| Technology | EUV (13.5 nm) and DUV (193 nm ArFi, 248 nm KrF, 365 nm i-line) |
| Numerical Aperture (NA) | 0.75–0.55 |
| Resolution | ≤8 nm (High-NA EUV) to ≤220 nm (i-line) |
| Overlay Accuracy | ≤1.1 nm (NXE:3800E) |
| Throughput | 160–350 wafers/hour (300 mm) |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 certified, compatible with 21 CFR Part 11 audit trails via integrated metrology interfaces |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | Twinscan NXT:1980Di |
| Light Source | ArF Excimer Laser (193 nm) |
| Numerical Aperture (NA) | 1.35 |
| Resolution (single-exposure) | ≤38 nm |
| Overlay Accuracy | <1.5 nm (3σ) |
| Throughput | 275 wafers per hour (300 mm) |
| Platform Architecture | NXT3 |
| Immersion Technology | Water-based liquid immersion |
| Compliance | SEMI S2/S8, ISO 14644-1 Class 1 Cleanroom Compatible |
| Software Interface | TWINSCAN Control System (TCS) v5.x with integrated metrology feedback loops |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | TWINSCAN NXT:1980Di |
| Numerical Aperture (NA) | 1.35 |
| Minimum Achievable Resolution | ≤38 nm |
| Throughput | 275 wafers/hour (300 mm) |
| Process Node Support | 14 nm to 45 nm (with multi-patterning extending capability to ~7 nm) |
| Age | 3 years operational use |
| Condition | Fully refurbished and factory-recertified |