AXIC
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| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Pumping Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint monitoring |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based PC control with recipe management and audit trail logging |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint detection |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based control with recipe management and audit trail logging |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Heating Method | Hot-Wall |
| Deposition Rate | 1 nm/s (typical, process-dependent) |
| Base Vacuum | ≤1×10⁻⁶ Torr |
| Operating Pressure Range | 2–200 mTorr |
| Chamber Internal Diameter | 6-inch (152 mm) |
| Substrate Compatibility | Up to 8-inch wafers |
| Application Domain | Semiconductor Thin-Film Fabrication |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Pressure | 1×10⁻⁶ mbar |
| Operating Pressure Range | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm, Z-axis motorized translation |
| Plasma Source | 915 MHz, up to 36 kW microwave generator |
| Process Duration Capability | Up to 500 h continuous operation |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm with Z-axis motion |
| Microwave Frequency | 915 MHz |
| Max Microwave Power | 36 kW |
| Process Duration Capability | Up to 500 h (continuous) |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis motion |
| Max. Continuous Process Duration | ≥3 weeks |
| Temperature Control | Precision ±1°C over full operating range |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |