Hefei Kejing
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| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (PRC) |
| Model | 34A-SA |
| Price | Upon Request |
| Length | 120 mm |
| Tip Type | Flat, Precision Ground |
| Application | QCM Crystal Mounting & Electrode Handling |
| Brand | Hefei Kejing |
|---|---|
| Substrate Diameter | 50.8 mm ±1 mm |
| Substrate Orientation | c-plane (0001) ±1.0° |
| Substrate Material | Al₂O₃ (sapphire) |
| Film Thickness | 10–5000 nm |
| Conductivity Type | Semi-insulating |
| Threading Dislocation Density (TDD) | XRD FWHM (0002) < 500 arcsec, XRD FWHM (10–12) < 1500 arcsec |
| Effective Area | >80% |
| Surface Finish | Single-side polished |
| Customization | Available for non-standard orientations and dimensions |
| Packaging | Class 1000 cleanroom environment |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Classification | Domestic (PRC) |
| Model | Co Foil |
| Pricing | Upon Request |
| Standard Dimensions | 10 mm × 10 mm × 1.0 mm |
| Packaging | Vacuum-sealed in Class 100 cleanroom bags, processed in Class 1000 cleanroom environment |
| Storage Requirement | Maintain under inert atmosphere or high-vacuum conditions to prevent surface oxidation |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Product Category | Domestic |
| Model | GaP Single-Crystal Substrate |
| Pricing | Available Upon Request |
| Crystal Orientation | <100> (standard) |
| Dimensions | 10 × 10 × 0.5 mm or Ø2" × 0.5 mm |
| Surface Finish | Single- or Double-Sided Polished |
| Surface Roughness (Ra) | <0.15 nm |
| Hardness (Mohs) | 3.0 |
| Density | 4.78 g/cm³ |
| Refractive Index | 3.45 |
| Elastic Modulus | 71 GPa |
| Growth Method | Liquid Encapsulated Czochralski (LEC) |
| Melting Point | 1072 °C |
| Carrier Concentration Range | 1×10¹⁶ – 6×10¹⁸ cm⁻³ |
| Dislocation Density | <5×10⁴ cm⁻² |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Quartz-Substrate Graphene Film |
| Thickness | 1 mm / 2 mm |
| Quartz Transmittance | >93% (at 550 nm) |
| Sheet Resistance | 300–500 Ω/□ (monolayer), 200–300 Ω/□ (bilayer) |
| Monolayer Coverage | ≥95% |
| Available Sizes | 1 cm × 1 cm, 2 cm × 2 cm, 5 cm × 5 cm |
| Storage Condition | Dry, oxygen-free environment at <30 °C |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Model | VGB-2 |
| Acrylic Thickness | 6 mm |
| Side Door Diameter | 400 mm |
| Antechamber Dimensions | 240 mm × 240 mm (Door Opening: Ø230 mm) |
| Glove Port Diameter | 150 mm |
| Vacuum Gauges | Dual Analog Vacuum Gauges (Chamber & Antechamber) |
| Vacuum Isolation Valves | Separate Manual Shut-off Valves for Chamber and Antechamber |
| Antechamber Ultimate Vacuum | ≤0.1 mbar |
| Chamber Atmosphere | Inert Gas Purged (N₂ or Ar), No Vacuum Capability Due to Acrylic Structural Limitations |
| Net Weight | 21 kg |
| External Dimensions | 1000 mm (L) × 500 mm (W) × 500 mm (H) |
| Packaging Dimensions | 1524 mm × 864 mm × 711 mm (60" × 34" × 28") |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model | InP Crystal Substrate |
| Pricing | Available Upon Request |
| Crystal Structure | Single-Crystal Indium Phosphide |
| Doping | Undoped / Sn / S / Fe / Zn |
| Conductivity Type | N-type (Sn, S, Fe) / Semi-Insulating (Fe, Zn) / P-type (Zn) |
| Hardness | 3.0 Mohs |
| Density | 4.78 g/cm³ |
| Refractive Index | 3.45 (at 10.6 µm) |
| Carrier Concentration | 1–2×10¹⁶ cm⁻³ (undoped), 1–3×10¹⁸ cm⁻³ (Sn-doped), 1–4×10¹⁸ cm⁻³ (S-doped), 6–4×10¹⁸ cm⁻³ (Fe-doped) |
| Dislocation Density | <5×10⁴ cm⁻² |
| Growth Method | Liquid Encapsulated Czochralski (LEC) |
| Melting Point | 1072 °C |
| Elastic Modulus | 7.1×10¹¹ dyn·cm⁻² |
| Standard Orientations | <100> |
| Standard Dimensions | 10 mm × 10 mm × 0.5 mm |
| Surface Finish | Single-Side or Double-Side Polished |
| Surface Roughness (Ra) | <15 Å |
| Cleanroom Handling | Packaged in Class 100 cleanroom bags within Class 1000 cleanroom environment |
| Brand | Hefei Kejing |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic |
| Model | InP/InGaAs:Zn Epi-Wafer |
| Pricing | Upon Request |
| Substrate Diameter | 2 inch (50.8 mm) |
| Substrate Thickness | 350 µm ± 25 µm |
| Substrate Orientation | <100> ± 0.5° with Primary Flat |
| Substrate Doping | Undoped |
| Substrate Carrier Concentration (Nc) | < 1 × 10¹⁶ cm⁻³ |
| Substrate Etch Pit Density (EPD) | < 1 × 10⁴ cm⁻² |
| Epilayer Composition | Lattice-Matched p-Type InGaAs:Zn (100) |
| Epilayer Doping | Zn (p-type) |
| Epilayer Carrier Concentration | 1 × 10¹⁷ – 1 × 10¹⁸ cm⁻³ |
| Epilayer Thickness | 1.0 µm ± 5% |
| Surface Finish | Single-Side Polished |
| Epilayer RMS Roughness | ≤ 0.2 nm (≈1 monolayer) |
| Packaging | Class 100 cleanroom bag under vacuum or individual cassette in Class 1000 cleanroom environment |