IBS
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| Brand | IBS |
|---|---|
| Origin | France |
| Model | FLEXion 200/400 |
| Product Type | Medium-Current Ion Implanter |
| Wafer Size Compatibility | 8-inch to 12-inch |
| Implant Energy Range | 50 keV (configurable down to 3 keV or up to 400–600 keV for multiply charged species) |
| Primary Implant Species | p⁺ (¹¹B, ³¹P, ⁷⁵As, etc.) |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% (1σ) across wafer under standard conditions |
| Vacuum | <7×10⁻⁷ mbar in beamline and target chamber |
| Gas Lines | 5 integrated (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder-end detection |
| Brand | IBS |
|---|---|
| Origin | France |
| Model | IMC210 |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Semiconductor Doping |
| Implant Energy | 50 keV (adjustable 20–200 keV, upgradable to 3 keV or 400/600 keV for multiply charged ions) |
| Wafer Size Compatibility | 8-inch and 12-inch wafers (backward-compatible with 6-inch, 2–5-inch, and irregular substrates down to 1 cm²) |
| Implant Species | p⁺ (e.g., ¹¹B, ³¹P, ⁷⁵As), Al⁺, H⁺, N⁺, He⁺, Ar⁺ |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% 1σ (measured on 6″ Si wafers with 100 nm SiO₂, ¹¹B⁺ at 100 keV, 1×10¹⁴ atoms/cm²) |
| Vacuum | Ion source <2×10⁻⁶ mbar |
| Gas Delivery | Integrated 5-channel system (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder endpoint detection |