Kaufman & Robinson, Inc.
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| Brand | Kaufman & Robinson, Inc. |
|---|---|
| Origin | USA |
| Model | eH 2000 |
| Cooling | Water-cooled |
| Discharge Voltage Range | 50–300 V DC |
| Discharge Current | Up to 15 A |
| Beam Divergence (HWHM) | >45° |
| Anode Diameter | ~5 cm |
| Physical Dimensions | Ø5.7" × H5.5" |
| Compatible Gases | Ar, Xe, Kr, O₂, N₂, Organic Precursors |
| Mounting Interface | Conflat or Quick-Connect Flange |
| Operating Pressure Range | 1×10⁻⁴ – 1×10⁻² Torr |
| Power Supply | eHx-30010A DC Magnetic Confinement Controller |
| Optional Features | Adjustable-angle mount, Sidewinder filament cathode, Grooved anode, eH 2000L / eH 2000x02 / eH 2000 LEHO variants |
| Brand | Kaufman & Robinson, Inc. |
|---|---|
| Origin | USA |
| Model | eH 400 |
| Discharge Voltage Range | 40–300 V DC |
| Discharge Current | Up to 5 A |
| Beam Diameter | ~4 cm |
| Beam Divergence (HWHM) | >45° |
| Anode Configuration | Modular, Grooved or Standard |
| Cooling | Water-Cooled Front Plate |
| Dimensions (D×H) | 3.7″ × 3.0″ |
| Operating Gases | Ar, Xe, Kr, O₂, N₂, Organic Precursors |
| Mounting Distance | 6–30″ |
| Gas Control Channels | 4 (programmable) |
| Compatible Vacuum Environments | Load-Lock & UHV Systems |
| Applications | Ion-Assisted Deposition (IAD), In-Situ Pre-Cleaning, Low-Energy Etching (≤300 eV), III-V Semiconductor Processing, Polymer Substrate Treatment |
| Brand | Kaufman & Robinson, Inc. |
|---|---|
| Origin | USA |
| Model | RFICP 140 |
| Anode RF Power | 1 kW (1.8 MHz) |
| Ion Beam Energy | 100–1200 eV |
| Max. Ion Current | >500 mA |
| Gas Compatibility | Ar, O₂, N₂, others |
| Gas Flow Rate | 5–40 sccm |
| Operating Pressure | <0.5 mTorr |
| Beam Aperture | 14 cm Ø |
| Grid Material | Molybdenum / Graphite |
| Beam Optics | OptiBeam™ self-aligning ion optics |
| Neutralizer | LFN 2000 |
| Dimensions | 25.1 cm H × 24.6 cm D |
| Flange | 12" CF |