Midas
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| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Type | Electrostatic Chuck (E-chuck) |
| Application | Wafer-level and Die-level Fixturing in Wet Etching & MEMS Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Control Interface | Analog voltage input (0–10 V) or digital RS-485 |
| Holding Force Range | Adjustable up to 0.1–0.8 N/cm² depending on die size and surface condition |
| Substrate Compatibility | Si, SiO₂, SiN, SOI, GaAs, quartz, and patterned MEMS wafers |
| Operating Temperature | Ambient to 80 °C |
| Vacuum Requirement | Optional backside helium cooling interface (compatible with standard wafer chucks) |
| Material | Al₂O₃ ceramic base with embedded bipolar or monopolar electrode architecture |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Model | IR-M (Infrared Microscope) |
| Optical Magnification Options | 2.5×, 5×, 10× |
| Wafer Compatibility | 100 mm (4″), 150 mm (6″), 200 mm (8″) |
| Spatial Resolution | ≤3 µm (at 5× objective, transmission mode) |
| Detection Sensitivity | Defects ≥3 µm resolvable in Si wafers under IR transmission |
| Illumination Modes | Top-side visible illumination (reflected mode) + Through-wafer infrared illumination (transmission mode) |
| Imaging Sensor | IR-sensitive CMOS camera with USB 3.0 interface |
| Stage | Manual or motorized XY stage (Ø ≤200 mm wafer support) |
| Application Domain | Silicon IC & MEMS wafer-level defect inspection, SOI layer visualization, buried structure analysis |
| Brand | Midas |
|---|---|
| Origin | South Korea |
| Manufacturer Status | Authorized Distributor |
| Origin Category | Imported |
| Model | MDA-400LJ |
| Pricing | Upon Request |
| Mask Size Max | 5-inch |
| Substrate Size Max | 4-inch circular wafers |
| Beam Shape | Circular |
| Beam Diameter | 125 mm |
| Light Source | UV LED |
| Wavelength | 365 nm |
| Beam Uniformity | < ±3 % |
| Peak Irradiance at 365 nm | 25 mW/cm² |
| Alignment Method | Manual |
| Alignment Accuracy | ±1 µm |
| Exposure Modes | Soft Contact, Hard Contact, Proximity (Vacuum-assisted) |
| Resolution | 1 µm (with 1 µm photoresist thickness under vacuum contact) |
| Weight | 150 kg |
| Dimensions (W×D×H) | 995 × 800 × 850 mm |
| Brand | MIDAS |
|---|---|
| Origin | South Korea |
| Model | MDA-400M |
| Exposure Source | Ushio 350W UV Lamp (or optional 365 nm LED, 10,000 h lifetime) |
| Resolution | 1 µm (vacuum/hard contact), 2 µm (soft contact), 5 µm (20 µm gap proximity) |
| Beam Size | 4.25 × 4.25 inch |
| Uniformity | ≤3% (over 4-inch field) |
| Intensity | >30 mW/cm² @ 365 nm |
| Exposure Time | 0.1–999.9 s |
| Alignment Accuracy | ±0.5 µm |
| Stage Travel | X/Y ±10 mm, θ ±5°, Z ±10 mm |
| Approach Step Resolution | 1 µm |
| Microscopy | Dual CCD zoom microscope (80×–480×), 17″ LCD monitor |
| Substrate Compatibility | 2″, 3″, 4″ wafers |
| Mask Size | 4″ and 5″ |
| Vacuum Requirement | < −200 mbar (integrated oil-free pump) |
| CDA | >5 kg/cm² |
| N₂ | >3 kg/cm² |
| Power | 220 V, 15 A, single-phase |
| Brand | Midas |
|---|---|
| Origin | Germany |
| Model | SPIN150X |
| Max. Rotation Speed | 12000 rpm |
| Speed Accuracy | ±1 rpm |
| Max. Acceleration | 30000 rpm/s |
| Substrate Diameter | up to 160 mm (6") |
| Chamber Diameter | 202 mm |
| Controller Memory | 50 programs × 99 steps each |
| Programmable Outputs | 2 dry-contact relays |
| Dimensions (W×D×H) | 275 × 240 × 450 mm |
| Housing Material | Natural Polypropylene (NPP) or PTFE options |
| Sample Compatibility | 5 mm to 160 mm round wafers or 4" × 4" square substrates |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | VPE (HF Vapor Phase Etcher) |
| Price Range | USD 68,000 – 136,000 |