NAURA
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| Brand | NAURA |
|---|---|
| Origin | Beijing, China |
| Model | GSE C200 |
| Wafer Size Capacity | ≤8-inch |
| Plasma Source Type | High-Density Inductively Coupled Plasma (ICP) |
| Etch Uniformity | <±3% (1σ, across 200 mm wafer) |
| Material Compatibility | Si, SiO₂, Si₃N₄, GaN, GaAs, InP, LiNbO₃, Nb, PI, metals, organics |
| Application Scope | R&D, failure analysis, pilot-line process development |
| Compliance | Designed to meet SEMI S2/S8 safety guidelines |
| Software | Integrated recipe management with audit trail logging (21 CFR Part 11–ready configuration available) |
| Brand | NAURA |
|---|---|
| Origin | Beijing, China |
| Model | HORIC D200 Series |
| Wafer Sizes | 4", 6", 8" |
| Compatible Substrates | Silicon (Si), Silicon Carbide (SiC), Silicon-on-Gallium Nitride (Si/GaN) |
| Process Capabilities | Phosphorus Diffusion, Boron Diffusion, Thermal Oxidation, Annealing, Alloying |
| Application Domains | R&D Laboratories, Compound Semiconductor Fabrication |
| Compliance | GB/T Standards, IEC 61000-6-2/6-4, SEMI S2-0215, CE Marked (EMC & LVD) |
| MES Integration | SECS/GEM, OPC UA, Custom API Support |