NS (Japan)
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| Brand | NS (Japan) |
|---|---|
| Origin | Japan |
| Model | 20-M/NS-12 |
| Etching Principle | Kaufman-Type Ion Beam Etching (Physical Sputtering) |
| Substrate Capacity | 12 × 4-inch wafers OR 3 × 18-inch substrates |
| Ion Source | 20 cm Diameter Kaufman Ion Source (KRI Original, WELL-5100 Power Supply Standard) |
| Sample Stage | Direct Liquid-Cooled Electrode with Planetary Rotation (Rotation + Revolution) |
| Beam Tilt Adjustment | Motorized ±15° Continuous Adjustment |
| Cooling Method | Integrated Direct Chilled Stage (Temperature Control Enabled During Etch) |
| Brand | NS (Japan) |
|---|---|
| Origin | Japan |
| Model | 20-M/NS-8 |
| Minimum Feature Size | 1 µm |
| Ion Beam Diameter | 1 µm |
| Acceleration Voltage Range | 1–5 kV (typical for Kaufman-type sources) |
| Substrate Capacity | 8 × Ø76 mm or 6 × Ø100 mm |
| Ion Source | 20 cm Kaufman-type Broad-Beam Ion Source (KRI, USA) |
| Cooling | Direct substrate cooling via integrated chiller interface |
| Motion Control | Planetary rotation (rotation + revolution) for uniform etch rate distribution |
| Power Supply | WELL-5000 (compatible with domestic replacements) |
| Compliance | CE-marked architecture |