Osiris
Filter
Showing the single result
| Brand | Osiris |
|---|---|
| Origin | Germany |
| Model | AFIXX 30s |
| Maximum Wafer Size | 200 mm |
| Temperature Range | Up to 650 °C (Independent Top/Bottom Plate Control) |
| Bonding Processes Supported | Thermal Compression, Adhesive Bonding, Glass Frit Bonding, Anodic Bonding, Eutectic Bonding, Direct Si–Si Bonding, SOI Bonding |
| Compatibility | Silicon, Compound Semiconductors (GaAs, SiC, GaN), Glass, Quartz, and SOI Wafers |
| System Architecture | Modular Bonding Chamber with In-Situ Alignment & Activation |
| Nanopatterning Capability | Integrated Nanoimprint Functionality |
| Compliance | Designed for GLP/GMP-aligned R&D and low-volume production environments |
| Operating Interface | Windows 10-based GUI with 22" Touchscreen HMI |
| Safety | Transparent Viewport Door for Real-Time Process Monitoring |