SUSS
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| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | DSC300 Gen3 |
| Wafer Size Support | 300 mm (optional 200 mm) |
| Resolution | 2 µm (line/space) |
| Overlay Accuracy | ≤1.0 µm |
| Depth of Focus (DOF) | High (NA-tunable) |
| Substrate Compatibility | Si, glass, SiC |
| Max. Warp Tolerance | 2 mm bow |
| Optical System | Wynne-Dyson broadband imaging optics |
| Exposure Source | Broadband UV (g-, h-, i-line compatible) |
| Operation Mode | Full-field projection + continuous scanning |
| Automation Level | Fully automated platform |
| Brand | SUSS |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Authorized Distributor |
| Instrument Type | Continuous Emission Monitoring System (CEMS) |
| Model | JF-2200 |
| Gas Measurement Ranges | CO 0–1000 ppm |
| Measured Parameters | O₂, CO, CO₂, CH₄, C₃H₈, C₄H₁₀, Total Hydrocarbons (HC), NOₓ, NO₂, N₂O, NH₃, SO₂, H₂S, temperature, humidity, static/total pressure, flue gas velocity |
| Compliance | Designed to meet ISO 14064-1, EN 15267, and EPA Method 3A / 6C / 7E / 10 standards for stack emission verification |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MA12 Gen3 |
| Type | Semi-Automatic Mask Aligner for Photolithography |
| Application Scope | Mask & Reticle Manufacturing, Wafer-Level Packaging, MEMS, R&D Prototyping |
| Alignment Accuracy | ≤ 1.0 µm (Optical, Off-Axis/IR Options Available) |
| Maximum Substrate Size | 200 mm |
| Max. Wafer Bow Tolerance | ±2 mm |
| Resolution | ≤ 2 µm (Line/Space, with Optimized Resist & Process) |
| Exposure Source | Broadband UV (i-line, g-line, h-line) |
| Numerical Aperture (NA) | Adjustable |
| DOF | Up to 150 µm (Configurable) |
| Software Compliance | Supports Audit Trail, User Access Levels, and Electronic Signature per FDA 21 CFR Part 11 Requirements |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MA200 Gen3 |
| Substrate Compatibility | ≤200 mm wafers & square substrates |
| Alignment Accuracy (Top-Side) | ≤0.5 µm |
| Resolution (Vacuum Contact Mode) | <0.8 µm |
| Resolution (Proximity Mode) | ≥3.5 µm |
| Exposure Optics | MO Exposure Optics® with telecentric illumination, HR/LGO mode switching, customizable filters & reduction kits for smaller wafers |
| Automation Level | Fully automated batch processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration, compatible with SEMI S2/S8 safety standards and GLP/GMP-aligned process documentation workflows |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MJB4 |
| Substrate Size | Up to 100 mm |
| Alignment Accuracy | Sub-micron |
| Resolution | ≤ 0.5 µm (hard contact) to 2 µm (soft contact) |
| Exposure Modes | Soft Contact, Hard Contact, Vacuum Contact |
| Optical System | MO® Exposure Optics with Telecentric Illumination |
| Uniformity | >95% across field |
| Compatible Substrates | Fragile, III-V, Compound Semiconductors, Glass, Si, SOI, Flexible Foils (thickness up to 4 mm) |