Syskey
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| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Co-Sputter |
| Instrument Type | Magnetron Sputtering Deposition System |
| Substrate Size | 12-inch (300 mm) |
| Substrate Temperature Range | Up to 1000 °C |
| Film Thickness Uniformity | ±3% |
| Base Pressure | 1×10⁻⁸ Torr |
| Sputter Sources | Up to 8 magnetron cathodes |
| Power Options | DC, Pulsed DC, RF |
| Gas Lines | Up to 4 mass flow controlled lines |
| Optional KRI Ion Source | Yes |
| Load-Lock Configuration | Single- or multi-wafer compatible |
| Vacuum Sealing | All-CF flanged, bakeable |
| Process Monitoring | Full-range vacuum gauges + Baratron capacitance manometer |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D environments |
| Brand | SYSKEY |
|---|---|
| Origin | Taiwan |
| Model | E-beam |
| Instrument Type | Electron Beam Evaporator |
| Substrate Size | Up to 12-inch wafer |
| Substrate Temperature Range | Ambient to 800 °C (heating) / Down to –70 °C (liquid nitrogen cooling) |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤5×10⁻¹⁰ Torr (with cryopump) |
| Crucible Configuration | 1–6 water-cooled rotating crucibles (7–25 cc each) |
| Optional Integration | KRI ion source, load-lock, transfer chamber, glovebox, plasma cleaner |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | FPD-PVD |
| Instrument Type | Magnetron Sputtering Coater |
| Substrate Size | Up to 12-inch (300 mm) wafers or 550 × 650 mm² glass panels |
| Base Pressure | ≤1×10⁻¹⁰ Torr |
| Substrate Temperature Range | Ambient to 1000°C (with high-temp heating stage option) |
| Thickness Uniformity | ±3% across full substrate |
| Configurable Chamber Count | 4 independent sputter chambers |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China (Taiwan) |
| Model | In-Line Sputter |
| Instrument Type | Magnetron Sputtering Deposition System |
| Application Field | Microelectronics |
| Maximum Substrate Size | 1100 × 1300 mm² (glass) |
| Substrate Temperature Range | Up to 400 °C |
| Film Thickness Uniformity | ±5% |
| Ultimate Vacuum | 10⁻⁷ Torr |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Lift-Off E-beam |
| Instrument Type | Electron Beam Evaporator |
| Application Domain | Microelectronics |
| Substrate Diameter | 12-inch (300 mm) |
| Maximum Substrate Temperature | 800 °C |
| Film Thickness Uniformity | ±3% |
| Base Pressure | 10⁻⁸ Torr |
| Cooling Options | Water-cooled or Liquid Nitrogen-cooled Substrate Holder (down to –70 °C) |
| Source Configuration | Multi-pocket e-beam gun (1/2/4/6 pockets) |
| Deposition Modes | Sequential or Co-evaporation |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Metal Thermal |
| Instrument Type | Thermal Evaporation Coater |
| Application Field | Solar Cells, Nanomaterials, Metal Thin Film Research |
| Substrate Size | Up to 12-inch wafer or 470 × 370 mm² glass |
| Substrate Temperature Range | Ambient to 800 °C |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤1×10⁻⁸ Torr |
| Vacuum Sealing | Nickel gasket + Viton O-rings |
| Evaporation Sources | Multiple configurable boat/crucible sources (7–25 cc) |
| Substrate Manipulation | Rotatable heated stage, adjustable source-to-substrate distance, individual shutters per source |
| Optional Integration | KRI ion source (for in-situ substrate cleaning and film densification), load-lock, glovebox interface, RGA, e-beam assist |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Equipment Type | Magnetron Sputter Deposition System |
| Substrate Size | Up to 300 mm (12-inch) |
| Base Pressure | ≤1×10⁻⁸ Torr |
| Substrate Temperature Range | Ambient to 600 °C |
| Thickness Uniformity | ±3% (across 300 mm wafer) |
| Sputter Sources | Up to 6 configurable magnetron cathodes (RF/DC/pulsed DC) |
| Gas Lines | Up to 4 mass flow controllers (Ar, N₂, O₂) |
| Substrate Motion | Planetary rotation + independent rotation |
| Optional Integration | KRI ion source, load-lock, RGA/OES ports, RF bias, film thickness monitor |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | OLED, OPV |
| Instrument Type | Thermal Evaporation Coater |
| Substrate Size | Up to 12-inch wafer or 470 × 370 mm |
| Thickness Uniformity | ±3% |
| Evaporation Source Control Resolution | 0.01 Å/s |
| Source Temperature Stability | ±0.1 °C |
| Alignment Accuracy (CCD-based mask-to-substrate) | ±5 µm |
| Base Pressure | ≤5 × 10⁻⁷ Torr |
| Chamber Material | 304 Stainless Steel |
| Max. Evaporation Sources | 12 |
| Cooling | External Water-Cooled Jacket |
| Integration Options | Load-lock transfer chamber, robotic handler, glovebox interface, RGA |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Organic Material |
| Instrument Type | Thermal Evaporation Coater |
| Application Field | Microelectronics |
| Substrate Size | 12-inch (300 mm) wafer or 470 × 370 mm² glass |
| Substrate Temperature Range | Up to 800 °C |
| Film Thickness Uniformity | ±3% |
| Ultimate Vacuum | 5 × 10⁻⁹ Torr |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China (Taiwan Region) |
| Model | Sputter 16 |
| Vacuum Base Pressure | ≤2×10⁻¹⁰ Torr |
| Pumping System | Pfeiffer HiPace 800/1000 Molecular Pumps + KRI KDC-300 Ion Source |
| Sputtering Cathodes | 4 (Independent RF/DC configurable) |
| Substrate Manipulator | 4-Axis (Rotation + XYZ Translation) |
| Heater | SiC Radiant Heater (up to 800 °C) |
| Gas Flow Control | Precision MFCs with Throughput Regulation |
| Compliance | ISO 27001-certified distribution & GLP-aligned installation support |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | Thermal ALD |
| Substrate Size | Customizable, up to 300 mm wafer |
| Process Temperature | Up to 400 °C (substrate heater) |
| Uniformity | ±1% |
| Precursor Channels | Up to 6, each independently heated to 200 °C |
| Pulse Valve Response Time | 10 ms |
| Chamber Material | Aluminum or stainless steel |
| Cooling | Integrated water-cooling system |
| Brand | SYSKEY |
|---|---|
| Origin | Taiwan |
| Manufacturer Type | Authorized Distributor |
| Instrument Type | Electron Beam Evaporator |
| Substrate Diameter | Up to 8 inches (203 mm) |
| Substrate Temperature Range | –70 °C (LN₂ cooling) to +800 °C |
| Thickness Uniformity | ±3% |
| Base Pressure | ≤5×10⁻¹⁰ Torr |
| E-beam Source Configuration | 4–6 crucibles (7–25 cm³ each) |
| Vacuum Sealing | All-metal CF flanges with bakeable elastomer O-rings |
| Pumping System | Cryopump (standard), optional turbomolecular pump |
| Process Monitoring | Bayard-Alpert gauge + quartz crystal microbalance (QCM) |
| Control Mode | Sequential or co-evaporation |
| Compliance | Designed for GLP/GMP-aligned thin-film R&D environments |
| Brand | Syskey |
|---|---|
| Origin | Taiwan |
| Model | UHV Sputter |
| Baseplate Size | Up to 12-inch (300 mm) wafers |
| Substrate Temperature Range | Ambient to 1000 °C |
| Film Thickness Uniformity | ±3% |
| Ultimate Vacuum | ≤5×10⁻¹⁰ Torr |
| Sputter Sources | Up to 8 configurable magnetron cathodes (RF/DC/pulsed DC) |
| Gas Lines | Up to 4 mass flow-controlled channels (Ar, N₂, O₂, etc.) |
| Chamber Sealing | All-metal ConFlat (CF) flanges, bakeable to 150 °C |
| Substrate Manipulation | Motorized rotation with ceramic bearing & internal water cooling |
| Optional Integration | Load-lock, transfer chamber, glovebox, ion source (100 keV Kr⁺), e-beam evaporation, RGA/OES ports |