Toho
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| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Measurement Principle | Electrochemical C–V Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI semiconductors |
| Automation Level | Fully Automated (Dry-In/Dry-Out, Auto-Load/Unload/Reload) |
| System Architecture | Modular, Cleanroom-Compatible, Optically & Electrically Isolated Subsystems |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and other III–V, II–VI, IV–IV, and ternary/quaternary compound semiconductors |
| Automation Level | Fully automated electrochemical etching and C–V scanning |
| Compliance | Designed for GLP/GMP-aligned R&D and process development environments |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | SB1000 |
| Temperature Range | 80 K – 700 K |
| Measurement Principle | Differential Thermoelectric Voltage Detection |
| Probe Configuration | 2-probe and 4-probe options |
| Sample Environment | High-vacuum compatible (integrated vacuum chamber) |
| Controller Type | Digital, microprocessor-based Seebeck coefficient controller |
| Cooling Method | Liquid nitrogen cryostat (for low-T) or heated stage (for high-T) |
| Data Acquisition | Real-time transient thermovoltage sampling with statistical averaging |
| Software Interface | PC-based control and analysis (Windows OS) |