WEP
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| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, dry-in/dry-out handling, and camera-assisted process control |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ cm⁻³ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, auto-load/unload, dry-in/dry-out capability |
| Software | Integrated ECV Control Suite with GLP-compliant audit trail, measurement recipe management, and camera-assisted process visualization |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Instrument Type | Electrochemical CV Profiler |
| Carrier Concentration Range | 1×10¹¹ cm⁻³ to 1×10²¹ cm⁻³ |
| Depth Resolution | down to 1 nm |
| Measurable Depth Range | 1 nm – 10 µm |
| Sample Compatibility | Dry-in/Dry-out handling |
| Compliance | ASTM F1391, ISO/IEC 17025-aligned operation, GLP-supporting audit trail |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21_ray |
| Instrument Type | Electrochemical Capacitance-Voltage Profiling System |
| Sample Compatibility | Semiconductor wafers (Si, Ge, SiC, GaN, InP, AlGaN, ZnO, CdTe, HgCdTe, etc.) |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| System Architecture | Modular, cleanroom-compatible, fully automated electrochemical etching & CV scanning platform |
| Software Control | Integrated real-time etch monitoring, CV sweep automation, profile reconstruction, GLP-compliant data logging |