Zhipure
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| Brand | Zhipure |
|---|---|
| Model | Customized-2 |
| Equipment Type | Batch Wet Processing System |
| Wafer Diameter | 100 mm – 300 mm |
| Cleaning Method | Liquid-phase Chemical Processing |
| Core Process Controls | Temperature Control, Chemical Concentration Control, Flow Rate Control, Pressure Control |
| Supported Processes | RCA Standard Clean, Photoresist Strip (Wet), Dielectric Layer Wet Etch (e.g., SiO₂, Si₃N₄), Metal Layer Wet Etch (e.g., Al, Ti, Cu), Pre-furnace Cleaning |
| Etch Uniformity | ≤4% intra-wafer, ≤4% inter-wafer, ≤4% batch-to-batch |
| Particle Additivity | <30 particles @ 0.09 µm (tested on thermally grown SiO₂ film |
| Metallic Contamination | <5 × 10⁹ atoms/cm² |
| Safety & Automation | Over-temperature protection per tank, leak detection sensors per process module, chemical recovery capability, Marangoni drying or spin-dry integration, automated acid replacement, auto-replenishment and formulation, SECS/GEM compliance |