Chemical Vapor Deposition Equipment
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| Brand | Ahkemi |
|---|---|
| Origin | Anhui, China |
| Model | TFE-1200-50-I-220 |
| Maximum Operating Temperature | 1150 °C (short-term), 1100 °C (rated) |
| Temperature Control Accuracy | ±1 °C |
| Heating Zone Length | 220 mm |
| Uniform Temperature Zone Length | 80 mm |
| Tube Dimensions | Φ30/50/60 × 1200 mm |
| Furnace Chamber Diameter × Height | Φ80 × 220 mm |
| RF Power Range | 5–500 W |
| RF Frequency | 13.56 MHz |
| Gas Delivery | 3-channel MFC-controlled (0–500 sccm per channel, customizable) |
| Vacuum System | Dual-stage rotary vane pump (optional diffusion or turbomolecular pump upgrade) |
| Rated Heating Power | 3 kW |
| Recommended Ramp Rate | ≤10 °C/min |
| External Dimensions | 1250 × 510 × 810 mm |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX 2800G4-TM |
| Heating Method | Hot-Wall |
| Internal Chamber Dimensions | 15 × 4 in & 8 × 6 in |
| Reactor Configurations | 42 × 2 in / 11 × 4 in / 6 × 6 in |
| Wafer Throughput | High |
| Process Cycle Time | Rapid |
| Uniformity & Stability | Optimized for Production Yield |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5 WW C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm (8×150 mm configuration) |
| Reactor Type | Planetary Rotating Reactor with Hot Wafer Transfer |
| Temperature Control | Wafer-Level |
| Process Automation | Cassette-to-Cassette Handling |
| Uniformity Control | AutoSat™ Dynamic Saturation Compensation |
| Factory Interface | SECS/GEM compliant |
| Deposition Rate | ~nm/min (material- and process-dependent) |
| Application Focus | SiC, GaN, and other compound semiconductor epitaxy |
| Compliance | Designed for integration into ISO Class 5–7 cleanroom environments and compatible with SEMI S2/S8 safety and automation standards |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | AIX G5+ C |
| Heating Method | Hot-Wall |
| Substrate Compatibility | 150 mm & 200 mm (Si, Sapphire, SiC) |
| Operating Pressure | Several mTorr |
| Deposition Rate | Up to several nm/min (material-dependent) |
| Reactor Type | Batch-mode with axial symmetry |
| Wafer Bow Control | Optimized via low-thermal-flux “warm ceiling” design |
| Temperature Uniformity | Minimized vertical thermal gradient for reduced wafer curvature |
| Configurable Substrate Holder | Customer-specific cavity design for precise wafer temperature profiling |
| Capacity | 8×150 mm or 5×200 mm wafers |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Equipment Type | Metalorganic Chemical Vapor Deposition (MOCVD) System |
| Reactor Architecture | Close-Coupled Showerhead® with Triple-Zone Heater |
| Maximum Substrate Temperature | 1400 °C |
| Substrate Configurations | 3×2″, 6×2″, 19×2″ wafers |
| In-situ Monitoring Options | LayTec EpiTT / EpiCurve®, AIXTRON Argus® Full-Wafer Temperature Mapping, AIXTRON Epison® Gas Concentration Sensor |
| Footprint | Compact Design for Lab and Pilot-Line Integration |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Software Platform | AIXTRON ProcessSuite™ with Audit Trail & Electronic Signature Support (21 CFR Part 11 compliant) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | Customized |
| Heating Method | Tungsten Filament with Triple-Zone Temperature Control (up to 1400 °C) |
| Substrate Compatibility | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Reaction Chamber | Adjustable showerhead-to-substrate spacing (5–25 mm) |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Scope | Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI compound semiconductors |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with semiconductor fab infrastructure (SEMI S2/S8, SEMI E10) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10 |
| Heating Method | Hot-Wall |
| Substrate Sizes | 3×2 inch, 1×4 inch, 1×3 inch, 1×2 inch (carrier exchange supports 6×2 inch, 3×3 inch, 1×6 inch) |
| Ga₂O₃ Growth Rate | >3 µm/h |
| Ga₂O₃ Surface Roughness (5 µm × 5 µm, AFM on Ga₂O₃ substrate) | ≤1.0 nm |
| Temperature Control | Triple-zone tungsten filament heating, up to 1400 °C |
| Showerhead-to-Substrate Spacing | Adjustable from 5 mm to 25 mm |
| In-situ Monitoring | Real-time wafer surface temperature mapping and warp measurement |
| Application Domain | Semiconductor thin-film epitaxy |
| Film Types | Metallic and compound semiconductor layers (e.g., Ga₂O₃, GaN, InP, GaAs, InSb, GaInNAs, II–VI) |
| Brand | AIXTRON |
|---|---|
| Origin | Germany |
| Model | G10-SiC |
| Wafer Compatibility | 150 mm & 200 mm |
| Application Focus | SiC Epitaxy for Power Devices |
| Brand | Angstrom |
|---|---|
| Model | customized-23 |
| Chamber Diameter | 200 mm (quartz) |
| Maximum Substrate Diameter | 150 mm |
| Furnace | Triple-zone resistive heating |
| Uniform Temperature Zone | 150 mm |
| Max Temperature | 1000 °C |
| Pressure Control Range | 50–500 mTorr (downstream, VAT throttle butterfly valve) |
| Vacuum Pump | Ebara ESA25-D dry pump (8 CFM) |
| Application Domain | Semiconductor thin-film fabrication, MEMS, optoelectronics, graphene & CNT research |
| Brand | Appsilon |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | MPCVD |
| Heating Method | Microwave Plasma Excitation |
| Application Domain | Semiconductor & Advanced Materials Research |
| Deposition Rate | Configurable per process recipe (typical range: 0.1–10 µm/h for diamond) |
| Process Gases | H₂, CH₄, N₂, O₂, Ar (gas mixing and mass flow control standard) |
| Deposited Films | Single-crystal & polycrystalline diamond, doped diamond (B/N/Si), diamond-like carbon (DLC), SiC, AlN |
| Base Vacuum | ≤5 × 10⁻⁷ mbar (with turbomolecular pumping system) |
| Operating Pressure Range | 10–200 mbar (microwave-coupled plasma stable across full range) |
| Chamber Internal Dimensions | Ø200 mm × 300 mm (standard configuration |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Heating Method | Hot-Wall |
| Deposition Rate | 1 nm/s (typical, process-dependent) |
| Base Vacuum | ≤1×10⁻⁶ Torr |
| Operating Pressure Range | 2–200 mTorr |
| Chamber Internal Diameter | 6-inch (152 mm) |
| Substrate Compatibility | Up to 8-inch wafers |
| Application Domain | Semiconductor Thin-Film Fabrication |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Model | BTF-1200C-CVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5×10⁻¹ Pa |
| Operating Pressure Range | 1.01325×10⁵ to 1.33×10⁻² Pa |
| Maximum Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Tube Diameter Options | Φ25/50/60/80/100 mm × 1000 mm |
| Heating Zone Length | 440 mm |
| Uniform Temperature Zone | 200 mm |
| Control Accuracy | ±1 °C |
| Programmable Stages | 30-segment PID with Auto-Tuning |
| Mass Flow Controllers | Triple-channel, N₂-calibrated (200/500/1000 sccm), Accuracy ±1.5% F.S., Repeatability ±0.2% F.S., Response Time (Gas): 1–4 s |
| Vacuum Pump | Rotary Vane, 10 m³/h, Ultimate Vacuum 5×10⁻¹ Pa, KF25 Inlet/Outlet, Oil Capacity 1.1 L, Noise ≤50 dB(A) |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | Micro PECVD |
| Heating Method | Hot-Wall |
| Base Vacuum | 5 × 10⁻¹ Pa |
| Operating Pressure Range | 1.01325 × 10⁵ Pa to 1.33 × 10⁻² Pa |
| RF Power Output | 0–150 W |
| RF Interface | 50 Ω, N-type female |
| Power Stability | ≤5 W |
| Harmonic Content | ≤−50 dBc |
| Max. Heating Temperature | 1200 °C (Continuous Use ≤1100 °C) |
| Effective Chamber Dimensions | Φ25 mm / Φ50 mm (Customizable Tube Diameter) |
| Chamber Material | Alumina + High-Temperature Ceramic Fiber |
| Thermocouple Type | K-type |
| Temperature Control Accuracy | ±1 °C |
| Control Mode | 30-Stage Programmable PID with Auto-Tuning |
| Heating Zone Length | 230 mm |
| Heating Element | Resistance Wire |
| Power Supply | Single-phase, 220 V, 50/60 Hz |
| Total System Power | 1 kW |
| Pumping Speed | 10 m³/h |
| Ultimate Vacuum (with Pump) | 5 × 10⁻¹ Pa |
| Vacuum Gauge Range | −0.1 to 0.15 MPa (0.01 MPa/div) |
| Mass Flow Controllers | Triple-channel, Stainless Steel Dual-Ferrule Fittings |
| Standard N₂ Flow Ranges | 200 / 500 / 1000 sccm (Customizable) |
| MFC Accuracy | ±1.5% FS |
| Linearity | ±1% FS |
| Repeatability | ±0.2% FS |
| Response Time (Gas) | 1–4 s |
| (Electrical) | 10 s |
| Working Pressure Drop | 0.1–0.5 MPa |
| Max. Inlet Pressure | 3 MPa |
| Cooling | Forced Air |
| Ambient Temp. Range | 5–45 °C |
| Relative Humidity | ≤85% RH |
| Noise Level | ≤50 dB(A) |
| Vacuum Interface | KF25 (Inlet & Exhaust) |
| Vacuum Connection | Bellows + Manual Gate Valve |
| Brand | CUBIC INSTRUMENTS |
|---|---|
| Origin | Hubei, China |
| Model | Gasboard-2060 |
| Detection Principle | Non-Dispersive Infrared (NDIR) |
| Target Gases | SiF₄, CF₄, SF₆, NF₃, CO₂ |
| Range | 1–264 ppm (0–200 mTorr) |
| Repeatability | ±0.5% of reading |
| Linearity | ±1% F.S. |
| Detection Limit | 1 ppm |
| Output | Analog (4–20 mA) and Digital (RS485/Modbus RTU) |
| Housing | 316L stainless steel, CF-40 flange compatible |
| Operating Temperature | 0–50 °C |
| Pressure Rating | ≤200 mTorr (vacuum-compatible) |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-CVD1200-50 |
| Heating Method | Resistive Tube Furnace (Dual Independent Zones) |
| Maximum Operating Temperature | 1100 °C |
| Vacuum Level | ≤1.0 × 10⁻³ Pa (with Molecular Pumping System) |
| Tube Dimensions | Ø50 mm × 1000 mm (quartz), optional diameters up to Ø100 mm |
| Heating Zone Configuration | 2 × 200 mm independent zones |
| Temperature Uniformity | ±5 °C over 100 mm zone length |
| Temperature Control | 50-segment programmable PID |
| Gas Channels | 3 (N₂, H₂, Ar configurable) |
| Mass Flow Accuracy | ±2.0% FS |
| Gas Inlet/Outlet Interface | 1/4″ VCR + KF16/KF25/KF40 vacuum flanges |
| Pressure Measurement Range | 10⁵ Pa to 1 × 10⁻⁵ Pa (composite gauge) |
| Power Supply | AC 220 V, 50/60 Hz |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Model | CY-PECVD100-1200 |
| RF Power Supply | 13.56 MHz ±0.005%, 0–300 W output, max reflected power 100 W, reflected power <3 W at full power, stability ±0.1% |
| Tube Material | High-purity quartz |
| Tube OD | 100 mm |
| Furnace Length | 440 mm |
| Heating Zone | Dual-zone (2 × 200 mm) |
| Max Continuous Operating Temperature | 1100 °C |
| Temperature Control Accuracy | ±1 °C |
| Temperature Program | 30-segment programmable PID via LCD touchscreen |
| Vacuum Seal | 304 stainless steel flange |
| Base Pressure | 0.1 Pa (via dual-stage rotary vane pump, 1.1 L/s) |
| Working Pressure Range | –0.15 MPa to +0.15 MPa |
| Gas Channels | 6 independent MFC-controlled lines (H₂, CH₄, C₂H₄, N₂, NH₃, Ar) |
| MFC Ranges | A–C: 0–200 SCCM |
| D–F | 0–500 SCCM |
| MFC Accuracy | ±1.5% F.S. |
| Gas Mixing Tank Volume | 1 L |
| Vacuum Interface | KF16 |
| Gas Fitting | 1/4" VCR-style compression fittings |
| Cooling | Motorized sliding furnace rail for rapid thermal quenching |
| Power Input | AC 220 V, 50 Hz |
| Brand | Korea Vacuum |
|---|---|
| Origin | South Korea |
| Model | PECVD/RIE |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication |
| Gas Channels | 8 (4 for PECVD, 4 for RIE) |
| Deposited Films | SiOₓ, SiNₓ |
| Base Pressure | 1×10⁻⁷ Torr |
| Operating Pressure Range (PECVD) | 1×10⁻³ Torr |
| Operating Pressure Range (RIE) | 0.02–500 mTorr |
| Maximum Substrate Size | 8-inch (200 mm) |
| RF Source Power | 600 W, 13.56 MHz |
| RF Bias Power | 300 W, 13.56 MHz |
| Platen Temperature | Up to 400 °C |
| Pumping System | 200 L/sec corrosion-resistant turbomolecular pump (Pfeiffer TPH261PC) + BOC Edwards RV12 roughing pump |
| Gas Distribution | Showerhead-type for both PECVD and RIE |
| Substrate Handling | Manual loading with pneumatic top-hinged lid |
| Vacuum Gauges | Baratron capacitance manometer (RIE), BOC Edwards wide-range gauge (PECVD & RIE) |
| MFC Count | 4 (PECVD), 3 (RIE) |
| Cooling | Water-cooled platen and electrodes |
| Control Interface | LabVIEW-based PC control with automated pressure regulation and process sequencing |
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Equipment Type | Imported Semiconductor CVD System |
| Model | PECVD Series |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication, MEMS, III-V & Wide-Bandgap Devices (GaAs, SiC, CPV), LED, SOI, TSV |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Pressure | 1×10⁻⁶ mbar |
| Operating Pressure Range | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm, Z-axis motorized translation |
| Plasma Source | 915 MHz, up to 36 kW microwave generator |
| Process Duration Capability | Up to 500 h continuous operation |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm with Z-axis motion |
| Microwave Frequency | 915 MHz |
| Max Microwave Power | 36 kW |
| Process Duration Capability | Up to 500 h (continuous) |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis motion |
| Max. Continuous Process Duration | ≥3 weeks |
| Temperature Control | Precision ±1°C over full operating range |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-100ST |
| Substrate Diameter | Ø100 mm (4") |
| Deposition Temperature Range | 80–400 °C |
| SiO₂ Deposition Rate | >300 nm/min |
| Maximum Film Thickness | Up to 100 µm |
| Deposition Technology | Liquid-source PECVD with RF self-bias coupling |
| Precursor Type | Liquid TEOS (tetraethyl orthosilicate), optional Ge/P/B dopant sources |
| Stress Control | Low-stress SiO₂ via self-bias tuning |
| Step Coverage | High-aspect-ratio conformality |
| Footprint | Compact, cleanroom space-optimized |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-220N |
| Wafer Capacity | 5 × ø3″, 3 × ø4″, or 1 × ø8″ wafers |
| Footprint Reduction | 40% vs. legacy SAMCO PECVD platforms |
| Process Gases | SiH₄, NH₃, N₂O, TEOS (optional add-on), O₂, Ar, N₂ |
| Plasma Source | RF (13.56 MHz) capacitive coupling |
| Chamber Material | Anodized aluminum with quartz-lined process zone |
| Vacuum System | Dry scroll pump + optional turbo-molecular pump |
| Compliance | CE-marked, compatible with ISO 14644-1 Class 5 cleanroom integration |