Direct Write Lithography Machine
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| Brand | Abner |
|---|---|
| Origin | Jiangsu, China |
| Model | ABN-MLM-001 |
| Resolution | 0.3 µm |
| Light Source Wavelength | 405 nm |
| Maximum Optical Power | 300 mW |
| Alignment Accuracy (Frontside) | ±0.1 µm (within 1 mm) |
| Alignment Accuracy (Backside) | ±1 µm (within 2.5 mm) |
| Writing Speed | 3–150 mm²/min |
| Substrate Compatibility | 2″–8″ wafers, glass, flexible substrates |
| Brand | ARMS SYSTEM |
|---|---|
| Origin | Japan |
| Manufacturer Status | Authorized Distributor |
| Product Origin | Imported |
| Model | UTA-IA |
| Exposure Mode | Projection-Based |
| Resolution | 1–2 µm |
| Light Source | High-Power LED |
| Wavelength Range | Visible Spectrum (400–700 nm) |
| Maximum Exposure Field | 2.5 mm × 1.5 mm |
| Minimum Patterned Area | 100 µm × 100 µm |
| Optical Architecture | Integrated Metallurgical Microscope + DLP Digital Micromirror Device (DMD) Projection Engine |
| Software-Controlled Pattern Generation | Yes |
| Compatibility | Standalone or Coupled to User-Provided Microscope (Optional Adapter Kit) |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | Twinscan NXT:1980Di |
| Light Source | ArF Excimer Laser (193 nm) |
| Numerical Aperture (NA) | 1.35 |
| Resolution (single-exposure) | ≤38 nm |
| Overlay Accuracy | <1.5 nm (3σ) |
| Throughput | 275 wafers per hour (300 mm) |
| Platform Architecture | NXT3 |
| Immersion Technology | Water-based liquid immersion |
| Compliance | SEMI S2/S8, ISO 14644-1 Class 1 Cleanroom Compatible |
| Software Interface | TWINSCAN Control System (TCS) v5.x with integrated metrology feedback loops |
| Brand | Auniontech |
|---|---|
| Model | MicroFAB-3D |
| Lithography Mode | Projection-based Two-Photon Polymerization (TPP) |
| Resolution | Adjustable from 0.2 µm to 3 µm |
| Origin | Imported |
| Compliance | CE-marked for laboratory use in Class 100–1000 cleanrooms |
| Sample Stage | Motorized XYZZ (4-axis) with closed-loop positioning |
| Laser Source | Femtosecond pulsed NIR laser (typically 780–800 nm, <150 fs pulse width) |
| File Input | STL, OBJ, 3MF, G-code via proprietary slicing engine |
| Software Platform | MicroFAB Control Suite v4.x (Windows 10/11, 64-bit) |
| Brand | Canon |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | FPA5000 ES4 |
| Resolution | 0.13 µm |
| Exposure Wavelength | 248 nm |
| Maximum Exposure Field | 26 mm × 33 mm |
| Numerical Aperture (NA) | 0.5–0.8 |
| Reduction Ratio | 4:1 |
| Overlay Accuracy | ±25 nm |
| Brand | EV Group (EVG) |
|---|---|
| Origin | Austria |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | EVG Mask Aligner Series |
| Exposure Mode | Proximity Mode |
| Resolution | ≥0.5 µm |
| Light Source | Mercury Arc Lamp |
| Wavelength | UV (i-line, g-line, h-line) |
| Illumination Uniformity | ±0.4% |
| Maximum Wafer/substrate Size | 2–8 inch (standard configuration) |
| Compatible Substrate Types | Si, SiC, GaAs, glass, quartz, flexible polymers |
| Alignment Accuracy | Sub-micron top-side and backside alignment |
| Vacuum Chuck Type | Pneumatic or electrostatic (model-dependent) |
| Brand | AYAO Instruments |
|---|---|
| Origin | South Korea |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | LithoMaskless |
| Exposure Mode | Projection-Based |
| Resolution | 0.5 µm |
| Light Source | UV LED |
| Wavelength Options | 365 nm / 385 nm / 405 nm |
| Maximum Exposure Area | 100 mm × 100 mm |
| DMD Chip Size | 0.65-inch |
| Compatibility | Broad photoresist & substrate support (Si, SiO₂, glass, quartz, flexible polymers) |
| Alignment Method | Integrated high-magnification optical alignment with real-time feedback |
| Brand | SPS-POLOS |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Category | Imported Instrument |
| Model | BEAM |
| Resolution | 0.8 µm (CD) |
| Light Source | Laser Galvanometer + 405 nm Laser Diode |
| Exposure Field | 150 mm × 150 mm |
| Substrate Compatibility | 4″–6″ wafers |
| Focus Actuation | Piezoelectric auto-focus with closed-loop optics (<1 s settling time) |
| Alignment | Semi-automatic multi-layer collimation (completed in minutes) |
| Compatible Resist | AZ5214E |
| Software Interface | GDSII-native GUI with wafer-level navigation, layer overlay, and CNC-style motion control |
| Brand | Raith / Simax |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Model | PicoMaster XF ATE-200 |
| Exposure Mode | Proximity Mode |
| Resolution | 600 nm |
| Light Source | GaN Laser Diode |
| Wavelength | 405 nm |
| Illumination Uniformity | ±5% |
| Maximum Exposure Area | 200 mm × 200 mm |
| Maximum Write Speed | 280 mm²/min |
| Minimum Feature Size | 600 nm |
| Origin | Sichuan, China |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Domestic (China) |
| Model | G-33D4 |
| Pricing | Available Upon Request |
| Exposure Mode | Contact Printing |
| Resolution | 1 µm (at 10× line depth ratio) |
| Light Source | High-Stability 365 nm UV LED |
| Illumination Uniformity | ±3% |
| Exposure Area | 110 mm × 110 mm |
| UV Intensity Range | 0–30 mW/cm² (adjustable) |
| Beam Divergence | ≤3° |
| UV Source Lifetime | ≥20,000 hours |
| Operating Surface Temperature | ≤30 °C |
| Alignment Accuracy | ≤1 µm |
| Optical Magnification | 91× to 570× (software-enhanced digital zoom) |
| Control System | 4-inch PLC with OMRON timing relay (0.1–999.9 s exposure) |
| Vacuum System | Direct-coupled vacuum pump with dual-stage anti-vibration isolation |
| Microscopy | Dual-field upright or horizontal stereo microscope with four 1/3″ CCD cameras and real-time imaging memory |
| Brand | ZEPTOOLS |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | ZML10A |
| Light Source | High-Intensity LED @ 405 nm |
| Uniformity | 96% |
| Minimum Achievable Feature Size | 0.5 µm |
| Exposure Field Size | 1.2 × 0.9 mm² (at 10× objective) |