Dry Process Equipment
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| Brand | Appsilon |
|---|---|
| Origin | Germany |
| Model | Appsilon MP |
| Deposition Principle | Microwave Plasma Chemical Vapor Deposition (MPCVD) |
| Substrate Compatibility | Ir / YSZ / Si (100 mm diameter) |
| Output Material | Free-standing single-crystal diamond wafers (Ø92 mm, 155 ct) |
| Crystal Orientations Available | 4p Geo A, 4p Geo B, 2p Type I, 2p Type II, seed crystals, custom geometries |
| Optical Tolerance | ±0.25 / –0.00 mm (standard), ±0.05 / –0.00 mm (optional) |
| Application Domain | Fourth-generation semiconductor development, optical components (ATR prisms), precision cutting tools, biomedical instruments |
| Brand | ASTRO PLASMA |
|---|---|
| Origin | Singapore |
| Model | ASTRO PACTO-100 |
| Etching Principle | 2.45 GHz Microwave Plasma |
| Maximum Substrate Size | 300 × 400 mm |
| Application Scope | Pre-bonding cleaning, surface activation, organic/oxide removal, wafer-level packaging (WLP), PDMS bonding, leadframe and PCB cleaning |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Pumping Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint monitoring |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based PC control with recipe management and audit trail logging |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint detection |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based control with recipe management and audit trail logging |
| Brand | EWIN-TECH |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Direct Manufacturer |
| Regional Classification | Domestic (China) |
| Model | PCS-8LA |
| Pricing | Upon Request |
| Brand | Guarder |
|---|---|
| Origin | Shandong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | GDR-30PR |
| Dimensions (W×D×H) | 630 × 650 × 420 mm |
| Chamber Volume | ~30 L (290 × 290 × 360 mm) |
| Electrode Size | 180 × 210 mm (capacitively coupled, internal) |
| RF Generator | 13.56 MHz, 0–300 W continuous adjustable output with auto-impedance matching |
| Optional | 40 kHz medium-frequency plasma source |
| Control System | 7-inch HMI touchscreen + PLC (Omron/Siemens components), manual/auto modes |
| Vacuum System | Leybold vacuum pump, SMC isolation & vent valves, Inficon pressure sensor |
| Pressure Control | PID closed-loop regulation, ±1 Pa accuracy |
| Gas Delivery | Dual-channel, FITOK gas lines, mass flow controllers + needle valves |
| Operating Modes | RIE (Reactive Ion Etching) and PE (Plasma Enhanced) selectable |
| Compliance | Designed for ISO Class 5–7 cleanroom environments, compatible with GLP laboratory workflows |
| Brand | LEBO Science |
|---|---|
| Origin | Jiangyin, Jiangsu, China |
| Model | UC100-SE |
| Rated Voltage | AC 220 V, 50 Hz |
| Lamp Power | 275–300 W |
| Lamp Lifetime | ≥8,000 h |
| Emission Wavelengths | 184/185 nm + 254 nm |
| Maximum Substrate Size | ≤8-inch (200 mm) |
| Dimensions (W×D×H) | 330 × 400–420 × 315 mm |
| Weight | 15–16 kg |
| Brand | Nano-Master |
|---|---|
| Origin | Germany |
| Model | SWC-3000 |
| Maximum Substrate Size | 300 mm (12") round or 230 mm × 230 mm (9" × 9") square |
| Control System | Microprocessor-based automation |
| Optional Modules | PVA brush station, Chemical Dispense Unit (CDU), N₂ ionizer, IR drying lamp, custom photomask/wafer chucks |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | Plasmalab System 100 |
| Wafer Handling | Up to 200 mm (8") single-wafer or batch (6 × 50 mm), cassette-to-cassette transfer via load-lock chamber |
| Substrate Temperature Range | –150 °C to +700 °C |
| Gas Delivery | Optional 6- or 12-channel gas manifold (remotely mounted) |
| In-situ Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) compatible |
| Integration Capability | Cluster tool ready with robotic wafer handling |
| Process Flexibility | Reactive ion etching (RIE), inductively coupled plasma (ICP), electron cyclotron resonance (ECR), and plasma-enhanced chemical vapor deposition (PECVD) modes |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | PlasmaPro 800 RIE |
| Category | Dry Process Equipment for Semiconductor Fabrication |
| Etching Principle | Reactive Ion Etching (RIE) with optional Plasma Enhanced (PE) mode |
| Substrate Compatibility | Up to 300 mm wafers and batch processing |
| Electrode Configuration | Large-area lower electrode with liquid cooling and/or resistive heating |
| Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) |
| Gas Delivery | Configurable gas cabinet with 4-, 8-, or 12-channel options |
| Vacuum System | Proximal turbomolecular pumping |
| Temperature Control | Precision substrate temperature regulation (±0.5 °C typical stability) |
| Compliance | Designed for GLP/GMP-aligned process documentation |
| Brand | PVA TePla |
|---|---|
| Origin | USA |
| Model | 80 Plus |
| Plasma Source Options | RF (13.56 MHz) or Microwave (2.45 GHz) |
| Chamber Configuration | Electrode-equipped (RF) or Electrode-less (Microwave) |
| Operation Modes | Manual and Automated Integration Capable |
| Compliance | Designed for Semiconductor Cleanroom Environments (Class 100 / ISO Class 5 compatible) |
| Integration | Standalone or Inline Production Line Compatible |
| Software Interface | Intuitive GUI with Parameter Logging and Recipe Management |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-200C |
| Etching Principle | Capacitively Coupled Plasma (CCP) Reactive Ion Etching |
| Uniformity | ±2% across 200 mm wafer |
| Configuration | Direct-Load, Parallel-Plate Electrode Architecture |
| Upgrade Options | Endpoint Detection, High-Capacity Vacuum Pumping, Load Lock Integration, Multi-Gas Delivery System |
| Control Architecture | Client-Server Software with PLC-Based Real-Time Hardware Control |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with SEMI S2/S8 safety standards |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Etchlab 200 |
| Etching Principle | Equipped with magnetic-field-enhanced Inductively Coupled Plasma (ICP/ISM) or Non-Linear Discharge (NLD) plasma source |
| Etch Rate | Up to 1 µm/min (material and process dependent) |
| Wafer Size Compatibility | 100–200 mm (standard), upgradable to 300 mm |
| Selectivity | Up to 1:20 (e.g., SiO₂:Si) |
| Uniformity | ±5% across wafer |
| Residue Level | <1% (post-etch residue coverage) |
| Aspect Ratio Capability | Up to 1:20 (depth:width) |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SENTECH Multi-Chamber Platform |
| Etching Principle | Capacitively Coupled Plasma (CCP) and/or Inductively Coupled Plasma (ICP) |
| Chamber Configuration | Modular multi-port transfer chamber (3–6 ports) |
| Wafer Handling | Load-lock pre-vacuum chamber and/or vacuum cassette station |
| Maximum Wafer Size | 200 mm |
| Integration Capabilities | ICP etcher, RIE etcher, ALD, PECVD, ICPECVD modules |
| Control Interface | GUI-based process control software compliant with industrial automation standards |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SI 500 D |
| Plasma Source | Planar Triple-Spiral Antenna (PTSA) |
| Substrate Temperature Range | RT to +350 °C |
| Vacuum System | Fully Integrated, High-Stability |
| Process Compatibility | SiO₂, SiNₓ, SiONₓ, a-Si, SiC, TEOS-derived films |
| Substrate Size | Up to 200 mm wafers or carrier-mounted substrates |
| Optional Features | Load-lock integration, Laser Endpoint Detection, Substrate Biasing, He-backside Cooling with Real-Time Backside Temperature Sensing |
| Control Architecture | SENTECH Fieldbus-Based SCADA Software with Audit-Trail-Capable UI |
| Compliance Context | Designed for GLP/GMP-aligned R&D and pilot-line fabrication |
| Brand | SUNJUNE |
|---|---|
| Origin | Guangdong, China |
| Manufacturer | SUNJUNE Technology Co., Ltd. |
| Model | VP-RS15 |
| Etching Principle | Capacitively Coupled Plasma (CCP) |
| RF Power | 500 W |
| RF Frequency | 13.56 MHz |
| Etch Rate | High |
| Selectivity | PR/GaAs ≥ 4:1 |
| SiO₂/InP > 10 | 1 |
| Etch Profile | Isotropic |
| Residue Byproduct | CO₂ |
| Uniformity | <5% (across 4-inch wafer) |
| Aspect Ratio | ≥5:1 |
| Chamber Material | 304 Stainless Steel |
| Max. Operating Temperature | ≤45°C after 3 min full-power operation |
| Gas Inlets | 2 independent mass-flow-controlled ports |
| Vacuum Display | Digital real-time readout |
| Control Interface | 7-inch capacitive touchscreen with embedded control software (Software Copyright No.: 2021SR1026389) |
| Safety Features | Automatic door interlock, pressure-sensing lid detection, post-process venting sequence |
| Warranty | 24 months parts and labor |
| Brand | UniTemp |
|---|---|
| Model | PTP-300 |
| Origin | Germany |
| Chamber Dimensions (Process Zone) | 305 mm × 305 mm × 25 mm |
| Chamber Height | 35 mm |
| Chamber Material | Anodized Aluminum or Optional Quartz Glass |
| External Dimensions | 600 mm × 1850 mm × 880 mm (W × D × H) |
| Gas Inlets | 2 × MFC-controlled lines |
| Vacuum Interface | DN25 KF flange |
| Microwave Generator | 2.45 GHz, 100–600 W (water-cooled, optional chiller) |
| Heating System | 24 IR lamps, total 18 kW |
| Control System | B&R SPS controller PP420 with LCD interface |
| Power Supply | 3/N/PE, AC 50/60 Hz, 230/400 V |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | AP-C350 |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | 441 |
| Quotation | Upon Request |
| Frame Material | Full Aluminum Extrusion |
| Enclosure | 441-Series Steel Sheet Housing |
| Motor-Controlled Axes | 3-axis (X/Y/Z) |
| Drive System | Stepper Motors + Synchronous Belt Transmission |
| Working Envelope | X: 400 mm |
| Y | 400 mm |
| Z | 100 mm |
| Compatible Processes | Low-temperature Plasma Cleaning, Dry Ice Jet Cleaning, Precision Dispensing |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MicroClean Series |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | VC-004 |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | VC-011 |
| Pricing | Available Upon Request |
| Brand | VC Plasma |
|---|---|
| Model | VC-C500 |
| Origin | Guangdong, China |
| Equipment Type | Dry Cleaning System for Semiconductor Wafer & Precision Component Handling |
| Automation Level | Fully Automated (PLC + HMI Controlled) |
| Positioning Accuracy | ±0.1 mm |
| Repeatability | ±0.05 mm |
| Z-Axis Adjustment Range | 100 mm (Manual) |
| Conveyor Speed | Adjustable from 2–5 m/min |
| Electrostatic Neutralization | Integrated Pulsed DC Ionizer |
| Dust Collection Principle | High-Efficiency Negative-Pressure Vacuum Capture |
| Modular Expandability | Optional Plasma Activation Module |
| Compliance Framework | Designed for ISO Class 5–7 cleanroom integration |
| Control Interface | Industrial Touchscreen HMI with Real-Time Status Monitoring and Mode Switching (Manual/Automatic) |