Electrochemical Capacitance Voltage Profiler
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| Brand | Semetrol |
|---|---|
| Origin | USA |
| Model | Semetrol DLTS |
| Temperature Range | 25 K – 700 K |
| Cooling | Closed-Cycle Liquid Helium Refrigerator |
| Capacitance Measurement Frequency | 1 MHz |
| Capacitance Sensitivity | 1 fF |
| Voltage Range | ±100 V (Boonton), ±10 V (DAQ) |
| Voltage Resolution | 0.3 mV (DAQ, <20 V), 1 mV (<20 V), 10 mV (>20 V) |
| Pulse Width Range | 5 μs – >0.1 s (DAQ), 15 ms – >0.1 s (Boonton) |
| Pulse Amplitude | up to 200 V (Boonton), up to 20 V (DAQ) |
| Slew Rate | <20 V/ms (Boonton), 20 V/μs (DAQ) |
| Current Limit | 5 mA |
| Sampling Rate | down to 1 μs |
| Record Length | >10,000 points |
| Time Resolution | 50 ns |
| Capacitance Resolution | <50 aF |
| Automatic Zeroing | Yes |
| Auto-Ranging | Yes |
| Response Time | ~25 μs |
| Compensation Range | 256 pF |
| Test Signal Levels | 15, 30, 50, 100 mV |
| Filtering | Auto-detection and sinusoidal noise suppression |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Measurement Principle | Electrochemical C–V Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI semiconductors |
| Automation Level | Fully Automated (Dry-In/Dry-Out, Auto-Load/Unload/Reload) |
| System Architecture | Modular, Cleanroom-Compatible, Optically & Electrically Isolated Subsystems |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and other III–V, II–VI, IV–IV, and ternary/quaternary compound semiconductors |
| Automation Level | Fully automated electrochemical etching and C–V scanning |
| Compliance | Designed for GLP/GMP-aligned R&D and process development environments |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, dry-in/dry-out handling, and camera-assisted process control |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ cm⁻³ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, auto-load/unload, dry-in/dry-out capability |
| Software | Integrated ECV Control Suite with GLP-compliant audit trail, measurement recipe management, and camera-assisted process visualization |