Electron Beam Lithography System
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| Brand | Allresist |
|---|---|
| Origin | Germany |
| Type | Imported Chemical Reagent |
| Product Line | AR-N (Negative Tone), AR-P (Positive Tone), CAR (Chemical Amplified Resist), E-Beam Resists |
| Compliance | ISO 9001-certified manufacturing, compatible with standard cleanroom protocols (Class 100/ISO 5) |
| Packaging Options | 30 mL, 100 mL, 250 mL, 1 L, 2.5 L |
| Storage | Light-sensitive, refrigerated (2–8 °C), nitrogen-purged sealed containers |
| Brand | JEOL |
|---|---|
| Origin | Japan |
| Model | JBX-9500FS |
| Acceleration Voltage | 100 kV |
| Maximum Substrate Size | 300 mm Ø wafers or 6-inch masks |
| Maximum Field Size | 1000 µm × 1000 µm |
| Stage Travel Range | 260 mm × 240 mm |
| Minimum Positioning Unit (LBC) | 0.15 nm (λ/4096) |
| Overlay Accuracy | ≤ ±11 nm |
| Field Stitching Accuracy | ≤ ±10 nm |
| In-Field Placement Accuracy | ≤ ±9 nm |
| Position DAC Resolution | 20-bit |
| Scan DAC Resolution | 14-bit |
| Scan Step Size | 0.25 nm |
| Maximum Scan Rate | 100 MHz |
| Electron Source | ZrO/W Schottky Emitter |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | P130 / S130 |
| Price Range | USD 280,000 – 420,000 |
| UV Light Source | 405 nm LED |
| XY Resolution | 2–10 µm |
| Layer Thickness | 5–20 µm |
| Build Volume (P130) | 3.84 × 2.16 × 10 mm (Mode 1) / 38.4 × 21.6 × 10 mm (Mode 2) / 50 × 50 × 10 mm (Mode 3) |
| Build Volume (S130) | Up to 100 × 100 × 50 mm |
| Optical System | High-NA Projection Micro-Lithography Optics |
| Post-Processing | Integrated Vacuum Despersion + UV Curing Station |
| Power Requirement | 200–240 V AC, 50/60 Hz, 3 kW |
| Weight | 450 kg |
| Dimensions | 1720 × 650 × 1820 mm |
| Brand | Nanoscribe |
|---|---|
| Country of Origin | Germany |
| Model | Photonic Professional GT2 |
| Category | Two-Photon Polymerization (TPP) Microfabrication System |
| Automation Level | Fully Automated |
| User Interface | Intuitive Graphical Workflow Environment |
| Compliance Framework | Designed for ISO 14644-1 Class 5 cleanroom integration |
| Software Architecture | Windows-based, FDA 21 CFR Part 11–ready audit trail support (optional configuration) |
| Brand | NS |
|---|---|
| Origin | Japan |
| Model | 4 IBE |
| Sample Holder | 4" φ, single wafer |
| Ion Incidence Angle | 0° to ±90° |
| Ion Source | KDC-40 Kaufman-type (KRI, USA) |
| Base Pressure | ≤1×10⁻⁴ Pa |
| Turbomolecular Pump | Pfeiffer, 350 L/s |
| Etch Uniformity | ≤±5% |
| Cooling | Direct substrate cooling |
| Motion Control | Planetary rotation (rotation + revolution) |
| Gas Compatibility | Ar, O₂, N₂, CF₄, Xe, and mixed process gases |
| Brand | Raith |
|---|---|
| Origin | Germany |
| Model | Pioneer Two |
| Electron Source | Thermal Field Emission Gun |
| Accelerating Voltage Range | 20 V – 30 kV |
| Minimum Guaranteed Resolution (Line Width) | ≤8 nm |
| Stage Travel (X/Y/Z) | 50 mm × 50 mm × 25 mm |
| XY Positioning Accuracy | ±2 nm |
| Overlay/Pattern Stitching Accuracy | ≤50 nm |
| Imaging Magnification Range | 20× – 1,000,000× |
| Optional Add-ons | Backscattered Electron Detector (BSED), Energy-Dispersive X-ray Spectrometer (EDS), Tilt-Rotation Stage Module |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SI 500 |
| Price | USD 295,000 (FOB Hamburg) |
| RF Source Frequency | 13.56 MHz |
| ICP Power | 1200 W |
| Bias RF Power | 600 W |
| Plasma Source | Planar Triple Spiral Antenna (PTSA) |
| Endpoint Detection | Interferometric In-situ Monitoring |
| Vacuum System | High-throughput Dry Pumping with Independent Gas Flow & Pressure Control |
| Software | SENTECH Advanced Plasma Process Control (APPC) v5.x |
| Brand | ZEPTOOLS |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | ZEL304G |
| Pricing | Available upon request |
| Electron Source | Schottky field-emission gun |
| Acceleration Voltage | 20 V–30 kV |
| Image Resolution | ≤1 nm @ 15 kV, ≤1.5 nm @ 1 kV |
| Minimum Beam Spot Size | ≤2 nm |
| Beam Current | ≥100 nA |
| Beam Current Density | >7000 A/cm² |
| Beam Blanking Rise Time | <100 ns |
| Writing Field | ≥500 × 500 µm |
| Minimum Single-Exposure Line Width | <15 nm |
| Stage Travel | ≥105 mm |
| Stitching Accuracy | <50 nm (mean + 1σ) |
| Overlay Accuracy | <50 nm (mean + 1σ) |
| Scan Rate | ≥20 MHz (standard), up to 50 MHz (max) |
| D/A Resolution | 20-bit |
| Dwell Time Increment | 10 ns |
| Supported File Formats | GDSII, DXF, BMP |
| Scan Modes | Raster (Z-scan), serpentine (S-scan), spiral vector scanning |
| Exposure Modes | Field calibration, field stitching, multi-layer overlay, auto-exposure sequencing |
| Optional Features | Proximity effect correction (PEC), laser interferometric stage, Faraday cup beam current monitor, TTL-compatible beam blanking (5 V), external I/O for synchronized stage motion, beam blanking, SE detection, and scan control |