Ion Implantation Equipment
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| Brand | IBS |
|---|---|
| Origin | France |
| Model | FLEXion 200/400 |
| Product Type | Medium-Current Ion Implanter |
| Wafer Size Compatibility | 8-inch to 12-inch |
| Implant Energy Range | 50 keV (configurable down to 3 keV or up to 400–600 keV for multiply charged species) |
| Primary Implant Species | p⁺ (¹¹B, ³¹P, ⁷⁵As, etc.) |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% (1σ) across wafer under standard conditions |
| Vacuum | <7×10⁻⁷ mbar in beamline and target chamber |
| Gas Lines | 5 integrated (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder-end detection |
| Brand | IBS |
|---|---|
| Origin | France |
| Model | IMC210 |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Semiconductor Doping |
| Implant Energy | 50 keV (adjustable 20–200 keV, upgradable to 3 keV or 400/600 keV for multiply charged ions) |
| Wafer Size Compatibility | 8-inch and 12-inch wafers (backward-compatible with 6-inch, 2–5-inch, and irregular substrates down to 1 cm²) |
| Implant Species | p⁺ (e.g., ¹¹B, ³¹P, ⁷⁵As), Al⁺, H⁺, N⁺, He⁺, Ar⁺ |
| Beam Current | >600 µA (¹¹B⁺), >1500 µA (³¹P⁺ or ⁷⁵As⁺) at 120–200 keV |
| Dose Range | 1×10¹¹ – 1×10¹⁸ atoms/cm² |
| Uniformity | <1.0% 1σ (measured on 6″ Si wafers with 100 nm SiO₂, ¹¹B⁺ at 100 keV, 1×10¹⁴ atoms/cm²) |
| Vacuum | Ion source <2×10⁻⁶ mbar |
| Gas Delivery | Integrated 5-channel system (BF₃, PH₃, AsH₃, Ar, N₂) with real-time gas consumption monitoring and cylinder endpoint detection |
| Brand | PancanNano |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Product Category | Imported Equipment |
| Model | SII |
| Product Type | High-Energy Single-Ion Implanter |
| Application Domain | IC & Quantum Device Fabrication |
| Implantation Energy | Custom-configurable per ion species (e.g., 1–100 keV) |
| Ion Dose Range | 1 to 10⁶ ions per site (single-ion counting mode) |
| Wafer Compatibility | Up to 150 mm (6″) substrates, compatible with diced chips and bulk crystals |
| Supported Ions | H⁺, N⁺, O⁺, Si⁺, P⁺, B⁺, As⁺, Te⁺, Ar⁺ (and other singly charged species via optional source modules) |
| Dimensions (L × W × H) | 2.4 m × 1.8 m × 2.2 m (fully shielded vacuum enclosure) |
| Brand | PVD |
|---|---|
| Origin | United Kingdom |
| Manufacturer Status | Authorized Distributor |
| Import Status | Imported |
| Model | Q-One |
| Product Type | Low-Energy High-Current Ion Implanter |
| Application Domain | IC Ion Implantation |
| Implantation Energy | 25 kV Liquid Metal Ion Source (LMIS) |
| Implantation Dose Control | Deterministic Single-Ion Delivery |
| Wafer Size Support | 6-inch |
| Available Ion Species | >40 elements selectable via LMIS and mass-filtered column |
| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Application Domain | IC Fabrication & Quantum Device Manufacturing |
| Implantation Energy | 50 keV |
| Wafer Size Compatibility | 8–12 inch |
| Implant Species | p⁺ (H⁺, B⁺, As⁺, P⁺, etc.) |
| Ion Source Options | Liquid Metal Ion Source (LMIS) & Plasma Ion Source |
| Beam Current Range | sub-fA to ~100 pA |
| Detection Efficiency | ≥98% |
| Positional Accuracy | <20 nm (3σ) |
| Stage Resolution | ≤1 nm (closed-loop) |
| Brand | LK Technology |
|---|---|
| Origin | Germany |
| Model | Q-ONE |
| Product Type | Medium-Current Ion Implanter |
| Implant Energy | 50 keV |
| Wafer Size | 8–12 inch |
| Implant Species | p⁺ (proton) |
| Ion Source Options | Liquid Metal Ion Source (LMIS), Plasma Ion Source |
| Beam Current | sub-femtoampere (fA) range |
| Positioning Accuracy | < 10 nm |
| Detection Efficiency | ≥ 98% |
| Compliance | ISO 14644-1 Class 4 cleanroom compatible, CE-marked, RoHS compliant |
| Brand | Spin-ION |
|---|---|
| Origin | France |
| Model | Helium-S® |
| Ion Species | He⁺ (also capable of H⁺ generation) |
| Implantation Energy Range | 1–30 keV |
| Energy Resolution | <50 eV |
| Beam Current Range | 1–50 μA (energy-dependent) |
| Typical Ion Flux | 1×10¹⁵ ions/cm²/min at 10 μA |
| Uniform Irradiation Area | 25 mm × 25 mm |
| Beam Uniformity | Intensity ±1%, Angular ±3° |
| Beam Purity | ≥99.99% (1:10⁴ contaminant ratio) |
| Vacuum Base Pressure | ≤1×10⁻⁷ mbar |
| Ion Source | Electron Cyclotron Resonance (ECR) |
| Beam Filtering | Wien Filter |
| Scanning | X-Y electrostatic deflection |
| Sample Holder | 25 mm diameter wafers/disks |
| Optional Accessories | In-situ heating stage (up to 500 °C), angular tilt module, load-lock rapid transfer chamber |
| Compliance | Designed for integration into UHV systems |
| Brand | TESCAN |
|---|---|
| Origin | Czech Republic |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported High-Energy Ion Implanter |
| Model | Quiin |
| Product Type | Dual-Beam FIB-SEM with Integrated Quantum-Scale Ion Implantation Capability |
| Application Domain | IC Fabrication, Quantum Device Engineering, Advanced Materials Modification |
| Electron Source | Schottky Field-Emission Gun (e-CLIPSE), Lifetime ≥ 2 years |
| Electron Beam Landing Energy | 500 eV – 30 keV |
| Electron Probe Current | ~pA to >100 nA |
| FIB Sources | iVeloce (ECR plasma source, Xe/O₂/Ar/He/N₂), Veloce (Liquid Metal Ion Source, Ga⁺/Ge⁺/Au⁺/Au₃⁺/Si⁺/Au clusters) |
| Ion Beam Energy Range | 3–30 keV |
| Minimum Measurable Ion Current | 20 fA |
| Maximum Probe Current | 1 µA (iVeloce), 50 nA (Veloce) |
| FIB Resolution | 5 nm @ 30 keV (Veloce), 40 nm @ 30 keV (iVeloce) |
| SEM Resolution | 4 nm @ 25 keV |
| Working Distance | 12 mm |
| Beam Intersection Angle | 55° |
| In-situ Heating Stage (FurnaSEM 1000) | Max Temp = 950°C, Ramp Rate = 0.01–3 °C/s, Area = 50 × 30 mm |
| GIS | Energis system with 3 precursor reservoirs (e.g., Pt, W, C, SiOₓ, H₂O, XeF₂) |
| Software Platform | Pegasus GUI & API |
| Brand | ULVAC KIKO |
|---|---|
| Origin | Japan |
| Model | IMX-350 |
| Product Type | Low-Energy, High-Beam-Current Implanter |
| Implantation Energy | 50 keV |
| Dose Range | 1×10¹⁶ ions/cm² |
| Wafer Size | 6-inch |
| Implant Species | p⁺ (Boron, Phosphorus, Arsenic compatible) |
| Beam Current Capability | High-current configuration |
| Ion Source Options | Liquid Metal Ion Source (LMIS), Dual Plasma Source (for O⁺, N⁺), Mass Analyzer Column |
| Imaging Resolution | 4 nm (dual-beam SEM column) |
| Positioning Accuracy | ≤20 nm (with piezo-driven stage and 1 nm optical encoder) |
| Brand | ULVAC KIKO |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Regional Classification | Domestic (PRC) |
| Model | Customized |
| Product Type | High-Energy Ion Implanter |
| Implant Dose Range | 1×10¹¹ – 1×10¹⁶ atoms/cm² |
| Wafer Sizes Supported | 2", 3", 4", 6", 8" |
| Available Ion Species | B, P, As, Al, S, H, Mg, Si |
| Single-Charge Ion Acceleration Energy | ≥200 keV (with deceleration down to 5 keV) |
| Dose Accuracy | ≤±1.5% |
| Ion Source Configuration | 5-channel solid-source vaporizer (up to 700 °C) |
| Tilt Angles | 0° and 7° (room-temperature stage) |
| Vacuum Performance | Ion Source ≤7×10⁻⁴ Pa |