Mask Lithography Machine
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| Brand | Abner |
|---|---|
| Origin | Jiangsu, China |
| Model | ABN-MLM-002 |
| Light Source | High-intensity Hg lamp / 365 nm i-line / Optional 405 nm UV LED |
| Illumination Uniformity | ≥90% |
| Intensity Stability | ±2% |
| Intensity Density | ≥50 mW/cm² (at wafer plane) |
| Optical Resolution | ≤2 µm (contact mode), ≤5 µm (proximity mode) |
| Exposure Area | 25 mm × 25 mm (customizable) |
| Exposure Time Range | 0.01–60 s (0.01 s step) |
| Alignment Accuracy | ≤2 µm |
| Stage Repeatability | ≤1 µm |
| Substrate Compatibility | 2″–6″ Si, glass, quartz, flexible substrates |
| Power Supply | AC 220 V / 50 Hz / ≤300 W |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Model | 1460K |
| Type | Contact/Proximity Mask Aligner |
| Application | R&D and low-volume semiconductor prototyping, MEMS, microfluidics, academic cleanroom fabrication |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Product Category | Mask Aligner / Stepper-Based Lithography System for Semiconductor Fabrication |
| Models | TWINSCAN XT:1900Gi, XT:2000i, NXT:1980Di, NXT:2050i, NXE:3400B/C, NXE:3600D, EXE:5000 Series |
| Light Source Wavelengths | 248 nm (KrF), 193 nm (ArF dry & immersion), 13.5 nm (EUV) |
| Single-Exposure Resolution | 38 nm (ArF immersion), 13 nm (EUV, NA=0.33), 8 nm (High-NA EUV, NA=0.55) |
| Throughput | Up to 275 wafers/hour (NXT:2050i), ~170 wafers/day (NXE:3400C), target 220 wafers/day (EXE:5000) |
| Supported Process Nodes | 28 nm to sub-2 nm |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 safety standards, compatible with 300 mm wafer handling automation (SECS/GEM) |
| Brand | ASML |
|---|---|
| Origin | Netherlands |
| Type | Mask Aligner / Stepper / Scanner |
| Technology | EUV (13.5 nm) and DUV (193 nm ArFi, 248 nm KrF, 365 nm i-line) |
| Numerical Aperture (NA) | 0.75–0.55 |
| Resolution | ≤8 nm (High-NA EUV) to ≤220 nm (i-line) |
| Overlay Accuracy | ≤1.1 nm (NXE:3800E) |
| Throughput | 160–350 wafers/hour (300 mm) |
| Compliance | ISO 14644-1 Class 1 cleanroom integration, SEMI S2/S8 certified, compatible with 21 CFR Part 11 audit trails via integrated metrology interfaces |
| Brand | Canon (Japan) |
|---|---|
| Origin | Japan |
| Equipment Type | Mask Lithography System (Stepper/Scanner/NIL) |
| Wafer/Substrate Compatibility | 200 mm, 300 mm, Gen 8.6 to Gen 10.5 FPD glass |
| Resolution | ≤65 nm (KrF stepper, with multi-patterning), 0.18–0.35 µm (i-line/KrF), 1–2 µm (packaging), 3–5 µm (FPD), <10 nm (NIL, theoretical) |
| Exposure Source | i-line (365 nm), KrF (248 nm), NIL UV imprint |
| Alignment Accuracy | ±0.5 µm (FPA-5520iV) |
| Throughput | ~100–120 wph (300 mm, FPA-8000 series) |
| Compliance | ISO 14644-1 Class 5 cleanroom compatible, SEMI S2/S8 certified, supports GLP/GMP-aligned process documentation |
| Brand | ELIONIX INC. |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | ELS-F150 |
| Price Range | USD 1.6–2.7 million (FOB Japan) |
| Brand | Makeway |
|---|---|
| Origin | USA |
| Model | MKW-280 |
| Mask Size | 5 in |
| Wafer/Substrate Size | 5 in |
| Alignment Accuracy | 1 µm (Vacuum Contact), 1.5 µm (Hard Contact), 3 µm (Soft Contact), 5 µm (Proximity Mode) |
| UV Source | 350 W, 365 nm, uniformity ±3%, irradiance 30 mW/cm² |
| Exposure Time Range | 0.1–999 s |
| Chuck Motion | Manual X/Y/Z/θ with wedge compensation leveling |
| Microscopy | Dual CCD-based system, 80×–400× standard, up to 1000× with optional lenses, working distance 50–150 mm |
| Display | 20" LCD monitor |
| Contact Modes | Vacuum contact (adjustable force), hard contact, soft contact, proximity (gap adjustable) |
| Power Supply | 220 V, single-phase, 15 A |
| Optional | Deep UV source, IR alignment mode, custom substrate chucks |
| Brand | Midas |
|---|---|
| Origin | South Korea |
| Manufacturer Status | Authorized Distributor |
| Origin Category | Imported |
| Model | MDA-400LJ |
| Pricing | Upon Request |
| Mask Size Max | 5-inch |
| Substrate Size Max | 4-inch circular wafers |
| Beam Shape | Circular |
| Beam Diameter | 125 mm |
| Light Source | UV LED |
| Wavelength | 365 nm |
| Beam Uniformity | < ±3 % |
| Peak Irradiance at 365 nm | 25 mW/cm² |
| Alignment Method | Manual |
| Alignment Accuracy | ±1 µm |
| Exposure Modes | Soft Contact, Hard Contact, Proximity (Vacuum-assisted) |
| Resolution | 1 µm (with 1 µm photoresist thickness under vacuum contact) |
| Weight | 150 kg |
| Dimensions (W×D×H) | 995 × 800 × 850 mm |
| Brand | MIDAS |
|---|---|
| Origin | South Korea |
| Model | MDA-400M |
| Exposure Source | Ushio 350W UV Lamp (or optional 365 nm LED, 10,000 h lifetime) |
| Resolution | 1 µm (vacuum/hard contact), 2 µm (soft contact), 5 µm (20 µm gap proximity) |
| Beam Size | 4.25 × 4.25 inch |
| Uniformity | ≤3% (over 4-inch field) |
| Intensity | >30 mW/cm² @ 365 nm |
| Exposure Time | 0.1–999.9 s |
| Alignment Accuracy | ±0.5 µm |
| Stage Travel | X/Y ±10 mm, θ ±5°, Z ±10 mm |
| Approach Step Resolution | 1 µm |
| Microscopy | Dual CCD zoom microscope (80×–480×), 17″ LCD monitor |
| Substrate Compatibility | 2″, 3″, 4″ wafers |
| Mask Size | 4″ and 5″ |
| Vacuum Requirement | < −200 mbar (integrated oil-free pump) |
| CDA | >5 kg/cm² |
| N₂ | >3 kg/cm² |
| Power | 220 V, 15 A, single-phase |
| Brand | WUXI CAS PHOTONICS INC |
|---|---|
| Origin | Sichuan, China |
| Model | URE-2000S/25A |
| Exposure Area | 6-inch wafer |
| Exposure Wavelength | 365 nm (i-line) |
| Irradiance | >25 mW/cm² |
| Resolution | 1 µm |
| Alignment Accuracy | ±2 µm (double-side, 0.8 mm substrate thickness), ±0.8 µm (single-side) |
| Illumination Uniformity | ≤2.5% (Φ100 mm), ≤4% (Φ150 mm) |
| Mask-to-Wafer Motion Range | X: ±5 mm, Y: ±5 mm, Θ: ±6° |
| Mercury Lamp | 350 W DC, imported (OSRAM) |
| Collimation Angle | 3.5° |
| Maximum Photoresist Thickness | 350 µm (SU-8, under specified process conditions) |
| Dimensions (L×W×H) | 1300 × 900 × 1800 mm |