Mask & Reticle Manufacturing Equipment
Filter
Showing all 17 results
| Brand | HORIBA |
|---|---|
| Origin | Japan |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Category | Imported |
| Model | PD-Xpadion |
| Pricing | Available Upon Request |
| Particle Detection Sensitivity | 0.5 µm (standard), 0.35 µm (optional), 0.1 µm (with RP-1 integration) |
| Throughput | 12 min per mask (front + back side scan) |
| Mask Size Compatibility | 5-inch to 9-inch |
| Uptime | ≥98% |
| MTBF | 1500 hours |
| Scan Surfaces | Glass substrate, thin-film layer, and patterned side (3-sided inspection) |
| Scan Time per Side | ≤4 minutes |
| Automation Interface | OHT, EFEM, SECS/GEM compliant |
| Optional Modules | Raman-based particle characterization, film thickness & uniformity mapping, film health monitoring, integrated particle removal (RP-1 system) |
| Brand | NIPPON FILCON |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Kayaku Advanced Materials SU-8 2000 Series Photoresists |
| Pricing | Upon Request |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | MaskTrack Pro |
| Application Scope | Automated cleaning, bake, and develop for photomasks & reticles |
| Compatibility | 90 nm to sub-1x nm half-pitch nodes |
| Process Capabilities | Front-side & backside cleaning, sulfur-free chemistry option, integrated particle detection readiness |
| Architecture | Cluster-compatible platform (with InSync, backside particle inspection, EUV mask storage) |
| Regulatory Context | Designed for ISO Class 1–5 cleanroom integration, supports GLP/GMP-aligned process documentation |
| Brand | MOJI-NANO |
|---|---|
| Origin | Shandong, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) & Material Developer |
| Product Category | Domestic Advanced Photoresist for Maskless Direct Laser Writing |
| Model | 3D Micro/Nano-Scale Photoresist Series |
| Pricing | Available upon Technical Consultation |
| Brand | NIPPON FILCON |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | NIPPON KAYAKU KPM-500 DFR |
| Pricing | Upon Request |
| Brand | Park SYSTEMS |
|---|---|
| Origin | South Korea |
| Model | NX-Mask |
| Application | EUV photomask defect repair and metrology |
| Technology | Non-contact atomic force microscopy (AFM) |
| Key Capabilities | Defect detection, nanoscale mechanical removal, post-repair 3D topography verification |
| Compliance | Designed for cleanroom-integrated semiconductor mask shops |
| Deployment | Dual-pod compatible for inline EUV reticle handling |
| Operational Environment | Ambient air, no vacuum, no beam-induced charging, no chemical reagents |
| Brand | Park SYSTEMS |
|---|---|
| Origin | South Korea |
| Model | NX-Mask |
| Application | EUV photomask defect repair, AFM-based nanomechanical removal and verification |
| Compliance | Designed for ISO 14644-1 Class 1–5 cleanroom integration |
| Software | XEI™ with automated defect-to-repair workflow, audit-trail logging per FDA 21 CFR Part 11 requirements |
| Repair Mechanism | Non-contact, voltage-controlled AFM tip nanoscrubbing and localized mechanical lift-off |
| Resolution | Sub-5 nm lateral resolution in topography and phase imaging |
| Sample Handling | Dual-pod EUV reticle cassette compatibility (SEMI F47 compliant) |
| Vacuum Requirement | None |
| Charging Risk | Electrostatically neutral operation |
| Chemical Usage | Dry, solvent-free process |
| Brand | Ruipho |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | RZJ-304 |
| Viscosity Options | 25 mPa·s |
| Recommended Developer | RZX-3038 |
| Film Thickness Range (Spin-Coated) | 1.0–3.5 µm |
| Prebake | 100°C for 90 s |
| Exposure Dose | 50–75 mJ/cm² |
| Development | RZX-3038 at 23°C for 60 s |
| Post-Exposure Bake | 120°C for 120 s |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | DSC300 Gen3 |
| Wafer Size Support | 300 mm (optional 200 mm) |
| Resolution | 2 µm (line/space) |
| Overlay Accuracy | ≤1.0 µm |
| Depth of Focus (DOF) | High (NA-tunable) |
| Substrate Compatibility | Si, glass, SiC |
| Max. Warp Tolerance | 2 mm bow |
| Optical System | Wynne-Dyson broadband imaging optics |
| Exposure Source | Broadband UV (g-, h-, i-line compatible) |
| Operation Mode | Full-field projection + continuous scanning |
| Automation Level | Fully automated platform |
| Brand | SUSS MicroTec |
|---|---|
| Country of Origin | Germany |
| Model | MA/BA Gen4 |
| Type | Semi-Automated Mask Aligner & Thermal/Nanoimprint Lithography Platform |
| Application Scope | R&D, Pilot Production, High-Volume Prototyping |
| Compliance | ISO 9001 Certified Manufacturing, CE Marked, Compatible with ISO 14644-1 Class 5 Cleanroom Integration |
| Optical System | MO Exposure Optics® with Telecentric Illumination |
| Alignment Modes | Top-Side, Bottom-Side, IR Alignment |
| Optional Alignment Accuracy | ≤ 0.5 µm (with DirectAlign®) |
| Resolution | Down to 0.8 µm (hard/soft/vacuum contact mode) |
| Substrate Compatibility | 100–200 mm wafers, reticles, glass, quartz, SiC, GaAs, flexible substrates |
| Automation Level | Semi-Automated with SMILE™ Process Integration Framework |
| Software | LITHOGRAPH® v5.x with Audit Trail, User Role Management, Recipe Versioning, and GLP/GMP-Ready Data Logging |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MA12 Gen3 |
| Type | Semi-Automatic Mask Aligner for Photolithography |
| Application Scope | Mask & Reticle Manufacturing, Wafer-Level Packaging, MEMS, R&D Prototyping |
| Alignment Accuracy | ≤ 1.0 µm (Optical, Off-Axis/IR Options Available) |
| Maximum Substrate Size | 200 mm |
| Max. Wafer Bow Tolerance | ±2 mm |
| Resolution | ≤ 2 µm (Line/Space, with Optimized Resist & Process) |
| Exposure Source | Broadband UV (i-line, g-line, h-line) |
| Numerical Aperture (NA) | Adjustable |
| DOF | Up to 150 µm (Configurable) |
| Software Compliance | Supports Audit Trail, User Access Levels, and Electronic Signature per FDA 21 CFR Part 11 Requirements |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MA200 Gen3 |
| Substrate Compatibility | ≤200 mm wafers & square substrates |
| Alignment Accuracy (Top-Side) | ≤0.5 µm |
| Resolution (Vacuum Contact Mode) | <0.8 µm |
| Resolution (Proximity Mode) | ≥3.5 µm |
| Exposure Optics | MO Exposure Optics® with telecentric illumination, HR/LGO mode switching, customizable filters & reduction kits for smaller wafers |
| Automation Level | Fully automated batch processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration, compatible with SEMI S2/S8 safety standards and GLP/GMP-aligned process documentation workflows |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SUSS MA200 Gen3 |
| Pricing | Upon Request |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | MA300 Gen3 |
| Wafer Size Support | 200 mm & 300 mm |
| Alignment Accuracy (Top-Side) | ±0.5 µm |
| Alignment Modes | Top-Side, Bottom-Side, Infrared (IR) |
| Exposure Method | Contact/Near-Contact Photolithography |
| Optical System | MO Exposure Optics® |
| Application Focus | Advanced Packaging (TSV, RDL, Bumping), MEMS, LED, Power Devices, WLP, Flip-Chip |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Automation Level | Full cassette-to-cassette robotic handling |
| Brand | SUSS |
|---|---|
| Origin | Germany |
| Model | MJB4 |
| Substrate Size | Up to 100 mm |
| Alignment Accuracy | Sub-micron |
| Resolution | ≤ 0.5 µm (hard contact) to 2 µm (soft contact) |
| Exposure Modes | Soft Contact, Hard Contact, Vacuum Contact |
| Optical System | MO® Exposure Optics with Telecentric Illumination |
| Uniformity | >95% across field |
| Compatible Substrates | Fragile, III-V, Compound Semiconductors, Glass, Si, SOI, Flexible Foils (thickness up to 4 mm) |
| Brand | TZTEK |
|---|---|
| Origin | Jiangsu, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Product Origin | Domestic (China) |
| Model | Spector |
| Pricing | Available Upon Request |
| Optical Modes | Reflective & Transmissive |
| Illumination Options | Visible Light & UV (365 nm) |
| CD Measurement Range | Down to 300 nm |
| 3σ Repeatability | Sub-1 nm (typical) |
| Maximum Mask Size Supported | 14-inch (355 mm) square or custom-shaped reticles |
| Interface Standard | SECS/GEM compliant |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | XBS300 |
| Application | Temporary bonding for 200 mm and 300 mm wafers |
| Substrate Compatibility | Silicon, glass carrier substrates (same or different diameters) |
| Alignment Method | Edge recognition + center alignment with GYRSET® technology |
| Coating Uniformity | Optimized via integrated non-contact multi-point thickness measurement |
| Process Steps Supported | Release layer deposition, adhesive spin-coating, low-force wafer bonding, UV or thermal curing, post-bond cooling |
| Platform Architecture | Modular, scalable throughput, minimized footprint |
| Adhesive Compatibility | Open platform supporting all commercially available temporary bonding adhesives |
| Compliance Context | Designed for semiconductor mask & reticle manufacturing environments compliant with ISO 14644-1 Class 5 cleanroom requirements and compatible with GLP/GMP-aligned process documentation workflows |