Other Semiconductor Industry Instruments
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| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Etch |
| Pricing | Upon Request |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | Ionfab 300 |
| Configuration Options | Direct-Load, Single-Wafer Transfer, Cassette-to-Cassette Transfer |
| Process Modes | Ion Beam Deposition (IBD), Ion Beam Etching (IBE), Co-deposition & Reactive IBE |
| Wafer Handling | 300 mm single-wafer or cluster-integrated |
| Surface Roughness | Sub-nanometer RMS (typical for IBD films) |
| Uniformity | ≤±1.5% across 300 mm wafer (process-dependent) |
| Reproducibility | CV < 2% for etch/deposition rate (run-to-run) |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PlasmaPro 100 ALE |
| Pricing | Available Upon Request |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | PlasmaPro 100 Estrelas |
| Substrate Size | 50–200 mm |
| Application Scope | Deep Silicon Etching (DSiE), MEMS, Advanced Packaging, Nanotechnology |
| Chamber Configuration | Single-chamber dual-mode (Bosch™ and cryogenic etching) |
| Process Flexibility | In-situ switchable between smooth sidewall, high-aspect-ratio, tapered via, and high-rate cavity etching |
| Key Hardware | Electrostatic/Heated chuck, optimized chamber liner, high-efficiency turbomolecular pump, fast-response mass flow controllers (MFCs), close-coupled RF delivery |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | PlasmaPro 100 Polaris |
| Wafer Size | 100 mm (4-inch) |
| Plasma Source | Inductively Coupled Plasma (ICP) with Magnetic Confinement |
| Electrode Configuration | Actively Cooled Bottom Electrode |
| Chuck Type | Electrostatic Chuck (ESC) with DC Bias Control |
| Chamber Liner | Heated, Anodized Aluminum |
| Pumping System | High-Capacity Turbomolecular Pump with Cryo-Assisted Roughing |
| Process Gas Compatibility | Cl₂, BCl₃, SF₆, CHF₃, O₂, Ar, N₂, and custom gas mixtures |
| Control Architecture | PLC-based real-time process control with Ethernet-enabled SECS/GEM interface |
| Compliance | CE-marked |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | NGP80 |
| Configuration Options | RIE, PECVD, RIE/PECVD |
| Wafer Handling | Up to 200 mm diameter wafers |
| Footprint | Compact (Small-Footprint) Design |
| Safety Compliance | SEMI S2/S8 |
| Control Architecture | Next-Generation Bus-Based Control System |
| User Interface | Enhanced Front-End Software with Integrated Diagnostics and Auto-Cleaning Protocol |
| Process Capabilities | Thin-film deposition (e.g., SiNₓ, SiO₂, a-Si:H), reactive ion etching, in-situ chamber conditioning |
| Brand | 1124123/13213112 |
|---|---|
| Origin | Netherlands |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Quant Nuova |
| Pricing | Upon Request |
| Brand | Semetrol |
|---|---|
| Origin | USA |
| Model | Semetrol DLTS |
| Temperature Range | 25 K – 700 K |
| Cooling | Closed-Cycle Liquid Helium Refrigerator |
| Capacitance Measurement Frequency | 1 MHz |
| Capacitance Sensitivity | 1 fF |
| Voltage Range | ±100 V (Boonton), ±10 V (DAQ) |
| Voltage Resolution | 0.3 mV (DAQ, <20 V), 1 mV (<20 V), 10 mV (>20 V) |
| Pulse Width Range | 5 μs – >0.1 s (DAQ), 15 ms – >0.1 s (Boonton) |
| Pulse Amplitude | up to 200 V (Boonton), up to 20 V (DAQ) |
| Slew Rate | <20 V/ms (Boonton), 20 V/μs (DAQ) |
| Current Limit | 5 mA |
| Sampling Rate | down to 1 μs |
| Record Length | >10,000 points |
| Time Resolution | 50 ns |
| Capacitance Resolution | <50 aF |
| Automatic Zeroing | Yes |
| Auto-Ranging | Yes |
| Response Time | ~25 μs |
| Compensation Range | 256 pF |
| Test Signal Levels | 15, 30, 50, 100 mV |
| Filtering | Auto-detection and sinusoidal noise suppression |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | MDPinline |
| Application | In-line quantitative minority carrier lifetime mapping of silicon wafers |
| Measurement Principle | Microwave-detected photoconductance decay (µ-PCD) |
| Scan Speed | <1 second per wafer |
| Integration | Conveyor-compatible, no moving mechanical parts |
| Compliance | Designed for semiconductor manufacturing environments compliant with ISO 9001 and SEMI S2/S8 safety standards |
| Software Interface | Ethernet-enabled, supports SECS/GEM protocol for factory automation integration |
| Data Output | Full-wafer lifetime map (pixel-resolved), dual-line resistivity profile, CSV/HDF5 export |
| Calibration | Traceable to NIST-traceable reference wafers |
| Operating Environment | Class 1000 cleanroom compatible (ISO 4), 18–28 °C, <60% RH non-condensing |
| Power Supply | 100–240 V AC, 50/60 Hz, <500 W |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | MDPspot |
| Type | Contactless, Microwave Photoconductance Decay (μ-PCD) Based Lifetime Tester |
| Sample Handling | Manual Z-axis adjustment (up to 156 mm height) |
| Measurement Mode | Single-point, non-contact, room-temperature operation |
| Material Compatibility | Crystalline and multicrystalline silicon wafers & bricks |
| Compliance | Designed for R&D and process monitoring in PV and semiconductor fabrication environments |
| Software | MDP Control Suite (Windows-based, real-time visualization, CSV export, GLP-compliant data logging) |
| Brand | Sinton Instruments |
|---|---|
| Origin | USA |
| Model | WCT-120MX + Suns-VocMX |
| Minority Carrier Lifetime Range | 0.1 µs – 15 ms |
| Penetration Depth | 3 mm |
| Maximum Sample Diameter | 230 mm |
| Resistivity Range | 0.15 – 300 Ω·cm |
| Compatible Material | Silicon wafers |
| Brand | Sumitomo |
|---|---|
| Origin | Japan |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SAW-20US |
| Price Range | USD 1,050,000 – 1,210,000 |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Measurement Principle | Electrochemical C–V Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI semiconductors |
| Automation Level | Fully Automated (Dry-In/Dry-Out, Auto-Load/Unload/Reload) |
| System Architecture | Modular, Cleanroom-Compatible, Optically & Electrically Isolated Subsystems |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | ECVpro+ |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | down to ≤1 nm |
| Sample Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and other III–V, II–VI, IV–IV, and ternary/quaternary compound semiconductors |
| Automation Level | Fully automated electrochemical etching and C–V scanning |
| Compliance | Designed for GLP/GMP-aligned R&D and process development environments |
| Brand | Toho |
|---|---|
| Origin | Japan |
| Model | SB1000 |
| Temperature Range | 80 K – 700 K |
| Measurement Principle | Differential Thermoelectric Voltage Detection |
| Probe Configuration | 2-probe and 4-probe options |
| Sample Environment | High-vacuum compatible (integrated vacuum chamber) |
| Controller Type | Digital, microprocessor-based Seebeck coefficient controller |
| Cooling Method | Liquid nitrogen cryostat (for low-T) or heated stage (for high-T) |
| Data Acquisition | Real-time transient thermovoltage sampling with statistical averaging |
| Software Interface | PC-based control and analysis (Windows OS) |
| Brand | PROCESS INSTRUMENTS |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | TA7000 |
| Pricing | Available Upon Request |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, dry-in/dry-out handling, and camera-assisted process control |
| Brand | WEP |
|---|---|
| Origin | Germany |
| Model | CVP21 |
| Measurement Principle | Electrochemical Capacitance–Voltage (ECV) Profiling |
| Carrier Concentration Range | 1×10¹¹ cm⁻³ to 1×10²¹ cm⁻³ |
| Depth Resolution | Down to ≤1 nm |
| Compatible Substrates | Conductive & insulating |
| Wafer Size Support | 4×2 mm² to 200 mm (8″) |
| Material Compatibility | Si, Ge, SiC, GaAs, InP, GaN, AlGaN, InGaN, AlInN, ZnO, CdTe, HgCdTe, and multicomponent III–V/II–VI compounds |
| Automation Level | Fully automated with real-time corrosion monitoring, auto-load/unload, dry-in/dry-out capability |
| Software | Integrated ECV Control Suite with GLP-compliant audit trail, measurement recipe management, and camera-assisted process visualization |
| Brand | Zhengye |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | OEM/ODM Manufacturer |
| Country of Origin | China |
| Model | XG Series |
| Price Range | USD 70,000 – 112,000 |
| Brand | ZKWN |
|---|---|
| Origin | Beijing, China |
| Model | GEST-20042 |
| Compliance Standards | GB/T 20042.7–2014, GB/T 20042.6–2011 |
| Measurement Modes | Through-plane (2-probe) and In-plane (4-probe) resistivity |
| Electrode Configuration | 50 mm gold-plated electrodes |
| Control Interface | 10-inch industrial touchscreen HMI |
| Test Automation | Fully automated pressure application, data acquisition, and post-test reset |
| Data Output | Real-time display and export of pressure, compressive strain, voltage, current, resistance, resistivity (mΩ·cm, Ω·cm, μΩ·m), conductivity (S/m, % IACS), and derived metrics (e.g., ΔR%, gradient-wise differential analysis) |
| Brand | ZKWN |
|---|---|
| Model | ZKGEST-125 |
| Measurement Principle | Four-Terminal DC Voltage-Current Method (Constant Current Source + High-Impedance Voltmeter) |
| Resistivity Range | 10⁻⁴ – 10⁵ Ω·cm |
| Resolution | 10⁻⁶ Ω·cm |
| Resistance Range (two-terminal mode) | 10⁻⁴ – 2×10⁵ Ω |
| Resistance Resolution | 1 µΩ |
| Voltage Ranges | 2 mV / 20 mV / 200 mV / 2 V |
| Voltage Accuracy | ±(0.5% rdg + 8 digits) at 2 mA range |
| Constant Current Outputs | 10 µA, 100 µA, 1 mA, 10 mA, 100 mA |
| Current Accuracy | ±(0.5% rdg + 2 digits) |
| Electrode Contact Width | 5 mm |
| Electrode Contact Force | 0.6 N |
| Sample Dimensions | (10 ± 0.2) mm width × (70–150) mm length × (3–4) mm thickness (thickness variation ≤ 5% of mean) |
| Power Supply | 220 V ±10%, 50/60 Hz, <50 W |
| Brand | ZOLIX |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | OEM Manufacturer |
| Country of Origin | China |
| Model | DSR300-DUV |
| Pricing | Upon Request |
| Brand | ZOLIX |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Original Equipment Manufacturer (OEM) |
| Country of Origin | China |
| Model | OminFluo990-DUV |
| Pricing | Upon Request |