Plasma Etching Equipment
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Showing all 11 results
| Brand | Appsilon |
|---|---|
| Origin | Germany |
| Model | Appsilon MP |
| Deposition Principle | Microwave Plasma Chemical Vapor Deposition (MPCVD) |
| Substrate Compatibility | Ir / YSZ / Si (100 mm diameter) |
| Output Material | Free-standing single-crystal diamond wafers (Ø92 mm, 155 ct) |
| Crystal Orientations Available | 4p Geo A, 4p Geo B, 2p Type I, 2p Type II, seed crystals, custom geometries |
| Optical Tolerance | ±0.25 / –0.00 mm (standard), ±0.05 / –0.00 mm (optional) |
| Application Domain | Fourth-generation semiconductor development, optical components (ATR prisms), precision cutting tools, biomedical instruments |
| Brand | ASTRO PLASMA |
|---|---|
| Origin | Singapore |
| Model | ASTRO PACTO-100 |
| Etching Principle | 2.45 GHz Microwave Plasma |
| Maximum Substrate Size | 300 × 400 mm |
| Application Scope | Pre-bonding cleaning, surface activation, organic/oxide removal, wafer-level packaging (WLP), PDMS bonding, leadframe and PCB cleaning |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Pumping Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint monitoring |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based PC control with recipe management and audit trail logging |
| Brand | AXIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | BenchMark 800 |
| Etching Principle | Reactive Ion Etching (RIE) |
| Deposition Principle | Plasma-Enhanced Chemical Vapor Deposition (PECVD) |
| Substrate Compatibility | Up to 200 mm (8-inch) wafers |
| Operation Modes | Single-wafer and batch processing |
| Chamber Configuration | Modular single-chamber and dual-chamber options |
| RF Matching | Automatic impedance matching |
| Pressure Control | Downstream capacitance manometer with optional closed-loop regulation |
| Vacuum Options | Mechanical pump, mechanical + roots blower, or turbomolecular pump |
| Endpoint Detection | Optional optical emission spectroscopy (OES)-based endpoint detection |
| Gas Delivery | Replaceable showerhead with multi-gas capability |
| Electrode Configurations | Planar, RIE, and PECVD-specific electrode modules |
| Software Interface | Windows-based control with recipe management and audit trail logging |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | Plasmalab System 100 |
| Wafer Handling | Up to 200 mm (8") single-wafer or batch (6 × 50 mm), cassette-to-cassette transfer via load-lock chamber |
| Substrate Temperature Range | –150 °C to +700 °C |
| Gas Delivery | Optional 6- or 12-channel gas manifold (remotely mounted) |
| In-situ Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) compatible |
| Integration Capability | Cluster tool ready with robotic wafer handling |
| Process Flexibility | Reactive ion etching (RIE), inductively coupled plasma (ICP), electron cyclotron resonance (ECR), and plasma-enhanced chemical vapor deposition (PECVD) modes |
| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | PlasmaPro 800 RIE |
| Category | Dry Process Equipment for Semiconductor Fabrication |
| Etching Principle | Reactive Ion Etching (RIE) with optional Plasma Enhanced (PE) mode |
| Substrate Compatibility | Up to 300 mm wafers and batch processing |
| Electrode Configuration | Large-area lower electrode with liquid cooling and/or resistive heating |
| Endpoint Detection | Laser interferometry and/or optical emission spectroscopy (OES) |
| Gas Delivery | Configurable gas cabinet with 4-, 8-, or 12-channel options |
| Vacuum System | Proximal turbomolecular pumping |
| Temperature Control | Precision substrate temperature regulation (±0.5 °C typical stability) |
| Compliance | Designed for GLP/GMP-aligned process documentation |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-200C |
| Etching Principle | Capacitively Coupled Plasma (CCP) Reactive Ion Etching |
| Uniformity | ±2% across 200 mm wafer |
| Configuration | Direct-Load, Parallel-Plate Electrode Architecture |
| Upgrade Options | Endpoint Detection, High-Capacity Vacuum Pumping, Load Lock Integration, Multi-Gas Delivery System |
| Control Architecture | Client-Server Software with PLC-Based Real-Time Hardware Control |
| Compliance | Designed for ISO Class 5 cleanroom integration and compatible with SEMI S2/S8 safety standards |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Etchlab 200 |
| Etching Principle | Equipped with magnetic-field-enhanced Inductively Coupled Plasma (ICP/ISM) or Non-Linear Discharge (NLD) plasma source |
| Etch Rate | Up to 1 µm/min (material and process dependent) |
| Wafer Size Compatibility | 100–200 mm (standard), upgradable to 300 mm |
| Selectivity | Up to 1:20 (e.g., SiO₂:Si) |
| Uniformity | ±5% across wafer |
| Residue Level | <1% (post-etch residue coverage) |
| Aspect Ratio Capability | Up to 1:20 (depth:width) |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SENTECH Multi-Chamber Platform |
| Etching Principle | Capacitively Coupled Plasma (CCP) and/or Inductively Coupled Plasma (ICP) |
| Chamber Configuration | Modular multi-port transfer chamber (3–6 ports) |
| Wafer Handling | Load-lock pre-vacuum chamber and/or vacuum cassette station |
| Maximum Wafer Size | 200 mm |
| Integration Capabilities | ICP etcher, RIE etcher, ALD, PECVD, ICPECVD modules |
| Control Interface | GUI-based process control software compliant with industrial automation standards |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SI 500 D |
| Plasma Source | Planar Triple-Spiral Antenna (PTSA) |
| Substrate Temperature Range | RT to +350 °C |
| Vacuum System | Fully Integrated, High-Stability |
| Process Compatibility | SiO₂, SiNₓ, SiONₓ, a-Si, SiC, TEOS-derived films |
| Substrate Size | Up to 200 mm wafers or carrier-mounted substrates |
| Optional Features | Load-lock integration, Laser Endpoint Detection, Substrate Biasing, He-backside Cooling with Real-Time Backside Temperature Sensing |
| Control Architecture | SENTECH Fieldbus-Based SCADA Software with Audit-Trail-Capable UI |
| Compliance Context | Designed for GLP/GMP-aligned R&D and pilot-line fabrication |
| Brand | SUNJUNE |
|---|---|
| Origin | Guangdong, China |
| Manufacturer | SUNJUNE Technology Co., Ltd. |
| Model | VP-RS15 |
| Etching Principle | Capacitively Coupled Plasma (CCP) |
| RF Power | 500 W |
| RF Frequency | 13.56 MHz |
| Etch Rate | High |
| Selectivity | PR/GaAs ≥ 4:1 |
| SiO₂/InP > 10 | 1 |
| Etch Profile | Isotropic |
| Residue Byproduct | CO₂ |
| Uniformity | <5% (across 4-inch wafer) |
| Aspect Ratio | ≥5:1 |
| Chamber Material | 304 Stainless Steel |
| Max. Operating Temperature | ≤45°C after 3 min full-power operation |
| Gas Inlets | 2 independent mass-flow-controlled ports |
| Vacuum Display | Digital real-time readout |
| Control Interface | 7-inch capacitive touchscreen with embedded control software (Software Copyright No.: 2021SR1026389) |
| Safety Features | Automatic door interlock, pressure-sensing lid detection, post-process venting sequence |
| Warranty | 24 months parts and labor |