ANRIC AT200M Benchtop Atomic Layer Deposition System
| Brand | ANRIC |
|---|---|
| Origin | USA |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | AT200M |
| Pricing | Upon Request |
| Footprint | 14 in × 15 in × 14.5 in (35.5 cm × 38.1 cm × 36.5 cm) |
| Chamber Volume | ~15 in³ (38.1 cm³) |
| Substrate Capacity | Up to four 2-inch wafers (square or circular) |
| Precursor Ports | Standard 2-port (1 precursor + 1 reactant) |
| Precursor Temp Range | RT to 180 °C ±2 °C (heated jacket) |
| Chamber Temp Range | RT to 300 °C ±1 °C (optional chuck heating to 450 °C+) |
| Plasma Source Option | 13.56 MHz, 80 W hollow cathode plasma (AT200M Plus) |
| Control Interface | 5-inch PLC-driven touchscreen HMI (Windows Ethernet remote access enabled) |
| Materials | Semiconductor-grade stainless steel chamber with metal-sealed fittings, heated manifolds, ultra-fast ALD valves with integrated inert gas purge (UHP N₂ >99.9995%) |
| Compliance | Cleanroom-compatible design |
Overview
The ANRIC AT200M is a compact, semiconductor-grade benchtop atomic layer deposition (ALD) system engineered for precision thin-film synthesis in constrained laboratory environments—including gloveboxes, electron microscopy suites, and shared cleanroom bays. Operating on the fundamental principle of self-limiting surface reactions, the AT200M delivers sub-nanometer thickness control and exceptional conformality across high-aspect-ratio features through sequential, saturative exposures of gaseous precursors and reactants. Its ultra-small chamber volume (~38.1 cm³) enables rapid purge cycles (<100 ms valve response), minimizing precursor consumption and reducing cycle times—critical for R&D throughput and material conservation. The system employs thermal ALD as standard, with optional plasma-enhanced (PE-ALD) capability via the AT200M Plus configuration, broadening process windows for low-temperature metal oxides (e.g., Al₂O₃ at <60 °C), nitrides, and noble metals (Pt, Ir). All wetted components—including heated manifolds, VCR-coupled precursor lines, and metal-sealed ALD valves—are fabricated from electropolished 316L stainless steel and rated for continuous operation up to 180 °C, ensuring long-term stability and contamination-free film growth.
Key Features
- Ultra-compact footprint (1.6 ft² / 0.15 m²) — certified glovebox-compatible and SEM/TEM-side installable
- Semiconductor-class construction: metal-sealed VCR connections, heated stainless-steel manifold, and fast-pulsing ALD valves with integrated UHP N₂ purge (≤50 ms settling time)
- Independent temperature control: chamber (RT–300 °C ±1 °C), precursor lines (RT–180 °C ±2 °C), and optional heated chuck (up to 450 °C+)
- Modular gas delivery architecture: standard 2-port configuration expandable to 4- or 6-port setups for multi-precursor chemistries (e.g., ternary oxides, MLD stacks)
- Integrated 5-inch PLC-based HMI with real-time process visualization, programmable sub-cycle logic, and recipe-driven deposition control
- Full safety compliance: hardware interlocks (vacuum, temperature, pressure, door), SEMI S2/S8-certified emergency protocols, and optional 21 CFR Part 11-compliant audit trail via PC-linked software
Sample Compatibility & Compliance
The AT200M accommodates substrates up to 2 inches in diameter or square format (2″ × 2″ × 3″ max height), supporting up to four wafers simultaneously. Custom chucks—ranging from dual-substrate carriers and powder tumblers to thick-substrate holders and 8-slot cassette fixtures—are available to meet application-specific geometry and throughput requirements. Chamber materials and surface finishes comply with ASTM F2273 (cleanroom compatibility) and ISO 14644-1 Class 5 specifications when operated under controlled N₂ purging. All vacuum interfaces use KF25 flanges with fluorosilicone O-rings; pump exhaust requires perfluoropolyether (PFPE) oil (e.g., Fomblin Y) and connection to lab exhaust ≥5 CFM. The system meets UL 61010-1 and CE machinery directive requirements, with documentation supporting GLP/GMP validation protocols including IQ/OQ/PQ templates.
Software & Data Management
Control is executed via an embedded PLC platform with a 5-inch resistive touchscreen HMI—requiring no external PC for routine operation. The interface provides intuitive recipe navigation, real-time plotting of chamber pressure, temperature profiles, and valve actuation status. Preloaded with validated process recipes for Al₂O₃, TiO₂, HfO₂, and SiO₂, the system supports user-defined pulse sequences, including nested sub-cycles for nanolaminates (MLD) and graded composition films. Optional Ethernet connectivity enables remote monitoring, script-based batch runs, and integration into centralized lab data systems. When paired with ANRIC’s PC-based ALD Studio Suite, the system logs timestamped event histories with operator ID, parameter deviations, and alarm triggers—fully traceable for FDA 21 CFR Part 11 compliance and internal quality audits.
Applications
The AT200M serves advanced materials research and pilot-scale process development across academia, national labs, and semiconductor R&D facilities. Typical use cases include: conformal passivation layers for perovskite solar cells; ultrathin dielectrics in 2D material heterostructures; seed layers for selective electroplating; functional coatings on MEMS/NEMS devices; and catalyst support engineering for electrochemical cells. Its low precursor consumption and rapid thermal cycling make it ideal for combinatorial screening of novel ALD chemistries—including ozone-assisted processes (via optional ATOzone module) for low-temperature high-k oxides—and for depositing uniform films on non-planar substrates such as nanowires, porous scaffolds, and powder beds (with roller drum option).
FAQ
What substrate sizes does the AT200M support?
Standard configuration handles up to four 2-inch circular or square substrates; custom chucks accommodate irregular geometries, stacked wafers, or powder samples.
Can the system operate inside a nitrogen-filled glovebox?
Yes—the AT200M is explicitly designed for glovebox integration, with all electrical feedthroughs sealed and external gas inlets configured for direct N₂ coupling.
Is plasma-enhanced ALD available?
The AT200M Plus variant includes a 13.56 MHz, 80 W hollow cathode plasma source with independent MFC control, enabling PE-ALD for thermally sensitive substrates.
How is process repeatability ensured across multiple users?
Hardware interlocks, calibrated temperature/pressure sensors, and PLC-enforced recipe execution eliminate manual drift; optional audit-trail software logs all parameter changes with user attribution.
What vacuum pump specifications are required?
A dry scroll or turbomolecular pump rated ≥5 CFM (≥140 L/min) is recommended; exhaust must be routed to lab ventilation using PFPE-compatible oil and ≥1-inch NW25 ducting.
Does the system support ozone-based chemistries?
Yes—optional ATOzone module generates high-purity ozone (up to 12 wt%) and integrates seamlessly with the gas manifold; optional ozone monitor ensures ambient safety compliance.
