ANRIC AT650/850T Benchtop Thermal Atomic Layer Deposition System

Overview

The ANRIC AT650/850T is a compact, benchtop thermal atomic layer deposition (ALD) system engineered for precision thin-film synthesis in research laboratories and pilot-line semiconductor process development. Operating on the self-limiting surface reaction principle—sequential, saturative chemisorption of gaseous precursors followed by purging—this system delivers sub-nanometer thickness control, exceptional conformality on high-aspect-ratio structures, and excellent run-to-run reproducibility. Designed for integration into ISO Class 5–7 cleanrooms, the AT650/850T features a warm-wall aluminum process chamber with integrated heating, enabling substrate temperatures from ambient to 400 °C (±1 °C), extendable to 500 °C upon request. Its small footprint (38.1 cm × 38.1 cm × 45.7 cm; 15″ × 15″ × 18″) accommodates wafers up to 150 mm (6″) diameter and supports rapid thermal cycling without significant thermal mass lag. The system architecture adheres to fundamental ALD engineering principles—including precise temporal separation of reactants, minimized gas-phase interactions, and inert gas isolation between pulses—ensuring stoichiometric fidelity across diverse material systems including metal oxides (Al₂O₃, HfO₂, SiO₂), nitrides (TiN, TaN), and noble metals (Pt, Ir).

Key Features

• Benchtop form factor with 15″ × 15″ footprint, optimized for space-constrained lab environments and modular cleanroom integration.
• Warm-wall aluminum chamber with substrate temperature control from RT to 400 °C (±1 °C); optional 500 °C upgrade available for high-thermal-budget processes.
• Four independently heated precursor delivery lines: three up to 185 °C (with jacketed heating), with fourth line configurable as heated or ambient—enabling stable vapor delivery of sensitive organometallics (e.g., TMA, TEMAHf, DEZ).
• Up to four oxidant/reductant sources, each equipped with ultra-fast mass flow controllers (MFCs); two standard MFCs included, with expansion to four via optional modules.
• High-temperature-compatible fast-pulse ALD valves (<50 ms actuation) synchronized with MFC-triggered delivery for precise dose timing and minimal precursor carryover.
• Integrated inert-gas (N₂) purge manifold with programmable flow sequencing, ensuring robust inter-pulse isolation and low residual contamination.
• Full hardware and software interlock architecture compliant with IEC 61508 SIL-2 requirements, supporting safe multi-user operation in shared facilities.
• Optional field-upgradable plasma module enables transition from thermal to plasma-enhanced ALD (PEALD) without chamber replacement.

Sample Compatibility & Compliance

The AT650/850T accepts substrates up to 150 mm (6″) in diameter, with customizable electrostatic or mechanical chucks available for non-standard geometries (e.g., MEMS devices, patterned SOI wafers, or flexible substrates). Chamber design ensures uniform thermal distribution and laminar precursor flow, validated per ASTM F1980-21 for ALD process uniformity assessment. All wetted materials—including VCR fittings, stainless-steel lines, and alumina-coated internal surfaces—are selected for compatibility with aggressive precursors (e.g., O₃, NH₃, H₂O₂) and meet SEMI F57 standards for semiconductor tool materials. System operation complies with ISO 14644-1 Class 5 cleanroom specifications when installed with appropriate exhaust and N₂ purge infrastructure. Optional ATOzone ozone generator supports low-temperature (<60 °C) growth of high-k Al₂O₃ and HfO₂ films meeting USP particulate limits for microelectronics-grade deposition.

Software & Data Management

The system is controlled via an embedded PLC-based human-machine interface (HMI) featuring a 10-inch industrial touchscreen display. Software architecture supports full ALD recipe definition—including independent temperature setpoints for substrate, precursor lines, and chamber walls; customizable pulse durations (10–10,000 ms), purge times (100–30,000 ms), and cycle repetition counts. Pre-validated process recipes for Al₂O₃, TiO₂, HfO₂, and Pt are provided in the built-in database, each traceable to documented film properties (thickness, refractive index, density) measured via ellipsometry and XRR. All process parameters, timestamps, and alarm logs are stored locally with optional export to CSV or direct integration with LabArchives or Electronic Lab Notebook (ELN) platforms. Audit trails comply with FDA 21 CFR Part 11 requirements when configured with user authentication and electronic signature modules. Remote operation is supported via Ethernet-connected PC interface using standard Modbus TCP protocol.

Applications

• Growth of ultrathin gate dielectrics (Al₂O₃, HfO₂) for advanced CMOS node development and 2D transistor integration.
• Conformal encapsulation layers for perovskite photovoltaics and OLED devices requiring pinhole-free barrier films.
• Atomic-scale passivation of III–V nanowires and GaN-on-Si heterostructures for power electronics reliability testing.
• Deposition of catalytic metal oxide overlayers (e.g., IrO₂, MnOₓ) on nanostructured electrodes for electrochemical sensor R&D.
• Multi-material nanolaminates (e.g., TiN/AlN, ZnO/TiO₂) for tunable optical coatings and metamaterial fabrication.
• Low-temperature PEALD-enabled metallization (Pt, Ru) for flexible electronics and bio-integrated microsystems.

FAQ

What substrate sizes does the AT650/850T support?
Standard configuration accommodates wafers up to 150 mm (6″) diameter; custom chucks enable processing of smaller substrates (e.g., 10 mm × 10 mm dies) or irregular shapes.
Is ozone generation integrated or optional?
Ozone is provided via the optional ATOzone module, which generates high-purity O₃ (≥10 wt%) on-demand for low-temperature oxide growth.
Can the system operate under vacuum or only atmospheric pressure?
The AT650/850T operates under dynamic vacuum conditions (base pressure ≤5 × 10⁻³ mbar), maintained by a ≥19.5 cfm wet pump with fluorinated oil (e.g., Fomblin) or optional dry pump.
What level of software validation is available for regulated environments?
IQ/OQ documentation packages and 21 CFR Part 11-compliant audit trail configurations are available upon request for GMP/GLP-aligned labs.
How is precursor purity managed during installation?
All precursor lines require VCR connections with new metal gaskets; N₂ purge gas must be ≥99.9995% pure with particle filtration ≤0.003 µm, delivered at 10–30 psi via 1/4″ VCR inlet.