CYKY CY-PECVD100-1200 Plasma-Enhanced Chemical Vapor Deposition System

Overview

The CYKY CY-PECVD100-1200 is a benchtop plasma-enhanced chemical vapor deposition (PECVD) system engineered for reproducible, low-temperature thin-film synthesis on temperature-sensitive substrates. Unlike conventional thermal CVD, this system integrates a 13.56 MHz radio-frequency (RF) plasma source to dissociate precursor gases—such as NH₃, SiH₄ (implied by SiNₓ/SiO₂ deposition capability), N₂, H₂, and inert carriers—enabling high-quality dielectric and passivation film growth at substrate temperatures ≤400 °C. The dual-zone tube furnace (two 200 mm heating zones, total 440 mm chamber length) accommodates uniform thermal profiling across the 100 mm OD high-purity quartz reaction tube, while the integrated sliding rail mechanism allows rapid post-deposition cooling—critical for minimizing interdiffusion in multilayer stacks. Designed explicitly for semiconductor R&D and pilot-scale fabrication, the system supports process development compliant with ISO 9001 manufacturing traceability requirements and aligns with standard cleanroom-compatible hardware interfaces.

Key Features

• Dual-zone programmable tube furnace with 30-segment PID temperature control, ±1 °C stability, and continuous operation up to 1100 °C—optimized for thermal ramping, dwell, and cooldown profiling
• 13.56 MHz RF generator (0–300 W, ±0.1% power stability, <3 W reflected power at full load) with impedance-matching network for consistent plasma ignition and density control
• Six independently controlled mass flow controllers (MFCs) with calibrated ranges (0–200 SCCM for reactive gases; 0–500 SCCM for carriers/diluents), ±1.5% F.S. accuracy, and VCR-style 1/4″ gas inlets
• Integrated 1 L stainless-steel gas mixing manifold enabling precise pre-mixing of multi-component precursors prior to plasma zone entry
• High-integrity vacuum architecture: KF16 vacuum interface, 304 stainless steel CF flanges, dual-stage rotary vane pump (1.1 L/s), and resistive vacuum gauge delivering base pressure ≤0.1 Pa
• Modular mechanical design with motorized sliding furnace rail for rapid thermal decoupling—reducing cycle time and enhancing throughput in iterative process optimization

Sample Compatibility & Compliance

The CY-PECVD100-1200 accommodates wafers up to 6″ (150 mm) diameter and planar substrates including silicon, fused silica, sapphire, and metal foils. Its operating pressure range (–0.15 to +0.15 MPa gauge) permits both sub-atmospheric PECVD and near-ambient deposition modes—essential for stress-tuning of SiNₓ and SiO₂ films used in MEMS passivation and photovoltaic antireflection coatings. All wetted components comply with SEMI F57 standards for semiconductor tool materials. Vacuum and gas delivery subsystems meet ISO 10101-1 (vacuum integrity) and ISO 8573-1 Class 2 purity requirements when paired with appropriate gas filtration. The system’s electrical architecture conforms to IEC 61000-6-3 (EMC emissions) and IEC 61000-6-2 (immunity), supporting integration into ISO Class 5–7 cleanroom environments.

Software & Data Management

Temperature profiles, RF power delivery, gas flows, and vacuum pressure are logged in real time via the onboard LCD touchscreen interface with non-volatile memory storage (≥10,000 data points per run). Export formats include CSV and Excel-compatible .xls for post-processing in MATLAB or Python-based statistical analysis pipelines. While no proprietary cloud platform is embedded, the system provides RS-232 and optional Ethernet (Modbus TCP) connectivity for integration into facility-wide SCADA or MES systems. Audit trails—including operator ID, timestamped parameter changes, and alarm events—are retained locally for GLP-compliant documentation. All firmware updates are delivered via USB flash drive with SHA-256 checksum verification to ensure integrity—supporting FDA 21 CFR Part 11 readiness when deployed with validated electronic signature protocols.

Applications

• Growth of stoichiometric silicon nitride (SiNₓ) for gate dielectrics and etch masks in CMOS process development
• Deposition of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si) layers for thin-film solar cells
• Low-stress silicon oxynitride (SiON) waveguide fabrication for integrated photonics test structures
• Surface functionalization of biomedical substrates using plasma-polymerized organosilicon films
• Passivation of perovskite solar cell layers via conformal Al₂O₃ or SiO₂ ALD-adjacent PECVD processes
• Preparation of carbon-based barrier layers (e.g., SiC, SiCN) for advanced packaging diffusion barriers

FAQ

What substrate sizes can be processed in the CY-PECVD100-1200?
Standard configuration supports substrates up to 150 mm (6″) in diameter. Custom quartz boat fixtures are available for handling multiple 2″ or 4″ wafers simultaneously.
Is the system compatible with corrosive precursors such as SiCl₄ or BCl₃?
No. The gas delivery path and chamber materials are rated for non-corrosive gases only (e.g., NH₃, H₂, N₂, Ar, CH₄). Use of halogenated or highly corrosive precursors requires optional Hastelloy-wetted upgrades and separate corrosion-resistant vacuum pumps.
Can the RF plasma be operated independently of furnace heating?
Yes. The RF generator and dual-zone furnace operate as fully decoupled subsystems—enabling true low-temperature PECVD (e.g., 150 °C substrate) with active plasma enhancement.
What vacuum level is achievable during plasma operation?
Stable plasma ignition and maintenance are verified down to 1–10 Pa. The base vacuum of ≤0.1 Pa is achieved under static pump-down without plasma.
Does the system support automated recipe loading and execution?
Yes. Up to 99 user-defined recipes—including temperature ramps, gas sequence timing, RF power modulation, and pressure setpoints—can be stored and recalled with one-touch activation.