CYKY CY-RTP1000-Φ200-300 High-Vacuum Rapid Thermal Processing Furnace

Overview

The CYKY CY-RTP1000-Φ200-300 is a high-vacuum rapid thermal processing (RTP) furnace engineered for precise, repeatable, and contamination-controlled thermal treatment of semiconductor wafers and advanced functional materials. Designed around the fundamental principles of radiative heating and controlled convective cooling, this system delivers ultra-fast thermal cycles—critical for dopant activation, silicide formation, oxide densification, and defect annealing in Si, SiC, GaN, and 2D material platforms. Its core architecture integrates a high-purity quartz process tube (Φ210 × 650 mm), a vacuum-sealed double-wall stainless steel chamber, and a high-efficiency infrared heating array capable of achieving ramp rates up to 200 °C/s. The furnace operates under high-vacuum conditions (down to 10⁻⁵ mbar with optional high-vacuum pumping) or controlled inert/reducing atmospheres, ensuring minimal oxygen partial pressure and preventing surface oxidation during transient thermal exposure.

Key Features

• 7-inch industrial-grade capacitive touchscreen HMI with intuitive graphical interface for real-time parameter entry, profile programming, and system status monitoring.
• High-precision linear motion platform enabling smooth, vibration-free translation of the quartz tube in and out of the heated zone—facilitating rapid sample loading/unloading without thermal shock to the furnace core.
• Quick-clamp stainless steel flange system eliminates threaded sealing; ensures reproducible vacuum integrity and reduces risk of quartz tube fracture during repeated assembly/disassembly.
• Integrated forced-air cooling module automatically engages when the quartz tube is retracted, enabling rapid quenching (<25 min from >200 °C) and supporting thermal shock studies and metastable phase stabilization.
• Fully insulated furnace chamber constructed from vacuum-formed high-purity alumina polycrystalline fiber (≥99.9% Al₂O₃), delivering exceptional thermal retention and uniformity across a 400 mm active heating zone.
• Modular utility interfaces: standardized KF-25/40 vacuum ports, MFC-ready gas inlets, and RS-485 serial communication for seamless integration into automated lab environments.
• Safety-certified protection suite including overtemperature cutoff, earth leakage detection, and hardware-interlocked door/tube position sensing.

Sample Compatibility & Compliance

The CY-RTP1000-Φ200-300 accommodates 8-inch (200 mm) diameter wafers with full radial temperature uniformity across the effective heating zone. Its quartz process tube and alumina fiber insulation are compatible with halogen-free, low-metallic-contamination protocols required for front-end-of-line (FEOL) processing. While not certified to SEMI S2/S8 standards out-of-the-box, the system’s design basis—including traceable temperature calibration paths, configurable audit logs, and deterministic thermal profiles—supports qualification under ISO/IEC 17025-accredited laboratories. Optional vacuum and gas delivery modules can be configured to meet ASTM F1470 (vacuum system performance) and SEMI F17 (gas purity) specifications. All electrical components comply with IEC 61000-6-2/6-4 EMC requirements.

Software & Data Management

The furnace interfaces via RS-485 to CYKY’s proprietary RTPControl™ software, enabling centralized monitoring and control of single or networked units. The software supports full traceability: time-stamped temperature profiles, event logging (e.g., vacuum breach, power fluctuation), and user-access-level authentication. Data export is available in CSV and XML formats compliant with laboratory information management systems (LIMS). For regulated environments, optional 21 CFR Part 11-compliant add-ons provide electronic signatures, audit trails, and role-based permissions—supporting GLP/GMP-aligned process validation workflows.

Applications

• Dopant activation annealing in Si, Ge, and SiGe heterostructures
• Metal silicide (NiSi, CoSi₂) formation and phase transformation kinetics
• Low-k dielectric curing and stress relaxation
• Graphene and transition metal dichalcogenide (TMD) substrate annealing
• Thin-film crystallization (e.g., IGZO, perovskite precursors)
• Thermal stability testing of MEMS packaging layers and barrier films
• Rapid oxidation/nitridation under controlled O₂/NH₃ partial pressures

FAQ

What vacuum level can the system achieve with standard configuration?
The base configuration includes a mechanical pump capable of reaching ≤5 × 10⁻² mbar. Optional turbomolecular pumping upgrades enable high-vacuum operation down to 1 × 10⁻⁵ mbar.
Is real-time wafer temperature measurement supported?
Yes—users may select an optional embedded N-type thermocouple mounted beneath the sample stage or integrate non-contact pyrometry via external viewport (requires optical access kit).
Can multiple gas lines be introduced simultaneously?
The standard gas manifold supports up to four independent channels, configurable with mass flow controllers (MFCs) or precision float meters for binary or ternary gas mixing (e.g., N₂/H₂/NH₃).
Does the system support automated recipe execution across shift changes?
Yes—RTPControl™ allows secure storage of validated thermal programs with version control, user-specific execution rights, and automatic report generation per run.
What maintenance intervals are recommended for the IR heating lamps?
Rated service life exceeds 5,000 hours under nominal operating conditions (≤1000 °C, ≤80 °C/s); lamp output degradation is monitored via integrated power feedback and logged in system diagnostics.