Plassys SSDR 400 Microwave Plasma Chemical Vapor Deposition System
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Pressure | 1×10⁻⁶ mbar |
| Operating Pressure Range | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm, Z-axis motorized translation |
| Plasma Source | 915 MHz, up to 36 kW microwave generator |
| Process Duration Capability | Up to 500 h continuous operation |
Overview
The Plassys SSDR 400 is a high-performance, industrial-grade Microwave Plasma Chemical Vapor Deposition (MPCVD) system engineered for scalable, reproducible synthesis of high-purity and ultra-high-purity synthetic diamond films and gem-quality single-crystal diamonds. Unlike conventional thermal CVD reactors, the SSDR 400 utilizes a 915 MHz microwave cavity to generate a stable, high-power-density plasma (up to 36 kW), enabling efficient dissociation of hydrocarbon precursors (e.g., CH₄/H₂ mixtures) at low gas-phase temperatures while maintaining substrate surface temperatures above 1,200 °C. This non-equilibrium plasma environment is critical for achieving high sp³ carbon bonding fraction, low nitrogen incorporation (<1 ppb in optimized runs), and exceptional crystallographic uniformity across large-area substrates. Designed specifically for semiconductor-grade diamond epitaxy and optical-grade gemstone production, the SSDR 400 integrates hot-wall heating architecture—ensuring radial and axial thermal homogeneity—and a robust stainless-steel vacuum chamber compliant with UHV-compatible flange standards (CF/ISO-K).
Key Features
- 915 MHz microwave plasma source with automatic impedance matching network and real-time reflected power monitoring for stable plasma ignition and sustained operation under varying gas compositions and pressures.
- Hot-wall heated reaction chamber with integrated radiation shielding and multi-zone thermal profiling capability; enables precise control of temperature gradients from 800 °C to 1,400 °C on Ø158 mm substrates.
- Motorized Z-axis stage translation (±25 mm range, 1 µm resolution) for dynamic substrate positioning during growth—critical for optimizing plasma-substrate coupling and thickness uniformity.
- Base vacuum level <1×10⁻⁶ mbar achieved via turbomolecular pump + dry backing pump configuration; full pressure control from 2 mbar to 200 mbar using mass flow controllers (MFCs) and capacitance manometers.
- Modular gas delivery system supporting up to six independent precursor lines (including CH₄, H₂, N₂, O₂, Ar, and dopant gases such as B₂H₆ or PH₃) with VCR fittings and leak-tight stainless-steel plumbing.
- Integrated safety interlocks compliant with IEC 61508 SIL2 requirements, including microwave door interlock, overtemperature cutoff, and emergency plasma shutdown.
Sample Compatibility & Compliance
The SSDR 400 accommodates substrates up to Ø158 mm in diameter—including silicon, iridium, molybdenum, and single-crystal diamond seeds—with customizable stage clamping and optional RF biasing for nucleation enhancement. All wetted components are electropolished 316L stainless steel or oxygen-free high-conductivity copper, ensuring minimal metallic contamination. The system conforms to ISO 14644-1 Class 5 cleanroom compatibility when installed with appropriate air filtration and exhaust scrubbing. It supports process documentation aligned with GLP and GMP frameworks, and its hardware architecture permits integration with electronic lab notebooks (ELN) and LIMS systems for audit-ready traceability.
Software & Data Management
Control is executed via Plassys’ proprietary M-Soft™ platform—a deterministic real-time operating system running on an embedded industrial PC. The GUI provides synchronized logging of >200 process parameters (microwave forward/reflected power, chamber pressure, gas flows, thermocouple readings, stage position) at 100 Hz sampling rate. Data export complies with ASTM E2792-19 (Standard Guide for Data Exchange in Materials Science) and supports CSV, HDF5, and vendor-neutral JCAMP-DX formats. Optional FDA 21 CFR Part 11 compliance package includes role-based access control, electronic signatures, and immutable audit trails for all parameter modifications and recipe executions.
Applications
- Growth of electronic-grade single-crystal diamond wafers for high-power RF transistors and radiation-hardened sensors.
- Deposition of polycrystalline diamond heat spreaders for GaN-on-diamond HEMTs and laser diode packaging.
- Production of optical-grade CVD diamond windows for synchrotron beamlines and high-energy laser systems (transmission >70% from UV to FIR).
- Research-scale synthesis of nitrogen-vacancy (NV⁻) center-doped diamond for quantum sensing platforms.
- Commercial gemstone manufacturing meeting International Diamond Council (IDC) grading criteria for color, clarity, and fluorescence stability.
FAQ
What is the maximum continuous run time supported by the SSDR 400?
Up to 500 hours (≈21 days) of uninterrupted operation, validated under standard diamond growth conditions (CH₄/H₂, 100 mbar, 1,250 °C).
Can the system be upgraded for in-situ spectroscopic monitoring?
Yes—optional ports accommodate UV-Vis, FTIR, and OES diagnostics with calibrated viewports and fiber-coupled spectrometers.
Is remote operation and diagnostics supported?
Fully supported via encrypted TLS 1.3 VPN connection; includes live camera feed, predictive maintenance alerts, and firmware-over-the-air (FOTA) updates.
Does the SSDR 400 meet semiconductor industry vacuum cleanliness requirements?
Yes—chamber bake-out capability to 200 °C and residual gas analysis (RGA) port enable qualification per SEMI F27-0218 (Vacuum System Cleanliness Standard).
