SENTECH Multi-Chamber Integrated Plasma Etching and Deposition System
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Model | SENTECH Multi-Chamber Platform |
| Etching Principle | Capacitively Coupled Plasma (CCP) and/or Inductively Coupled Plasma (ICP) |
| Chamber Configuration | Modular multi-port transfer chamber (3–6 ports) |
| Wafer Handling | Load-lock pre-vacuum chamber and/or vacuum cassette station |
| Maximum Wafer Size | 200 mm |
| Integration Capabilities | ICP etcher, RIE etcher, ALD, PECVD, ICPECVD modules |
| Control Interface | GUI-based process control software compliant with industrial automation standards |
Overview
The SENTECH Multi-Chamber Integrated Plasma Etching and Deposition System is a modular, ultra-high-vacuum (UHV)-compatible platform engineered for advanced semiconductor process development and pilot-line manufacturing. Built upon SENTECH’s decades of expertise in plasma source design and vacuum integration, the system implements dual-mode plasma generation—capacitively coupled plasma (CCP) for anisotropic etching and inductively coupled plasma (ICP) for high-density, low-bias processing—enabling precise control over ion energy, flux, and radical density. The architecture centers on a stainless-steel transfer chamber maintained at ≤1×10⁻⁷ mbar, serving as the mechanical and vacuum backbone for up to six process modules. This design eliminates air exposure between sequential steps, ensuring contamination-free surface conditioning, reproducible interface engineering, and reliable thin-film stack fabrication—critical for MEMS, power devices, compound semiconductors, and advanced node R&D.
Key Features
- Modular transfer chamber with configurable 3–6 port layout, constructed from electropolished 316L stainless steel and baked to UHV specifications
- Integrated robotic wafer handler with ceramic-coated end-effector, providing ±50 µm placement repeatability and compatible with 100–200 mm wafers (including SOI and compound substrates)
- Dual-load capability via optional dual vacuum cassette stations or load-lock pre-vacuum chamber, enabling continuous operation with >95% tool uptime in extended process sequences
- Standardized flange interfaces (CF-63/CF-100) and electrical/data bus architecture ensure plug-and-play integration of SENTECH ICP etchers, RIE systems, thermal ALD reactors, PECVD, and ICPECVD modules
- Real-time pressure monitoring (capacitance manometers), RF forward/reflected power sensing (up to 3 kW), and optical emission spectroscopy (OES) ports integrated into all process chambers
- Redundant safety interlocks compliant with SEMI S2/S8 and ISO 13849-1 Category 3 PLd requirements
Sample Compatibility & Compliance
The system accommodates bare silicon, SiC, GaN, sapphire, quartz, and metal-coated wafers (e.g., TiN, TaN) across 100–200 mm diameters, including notched and flat-edge variants. Substrate temperature control ranges from –100 °C to +400 °C per module, supporting cryogenic etching and low-thermal-budget deposition. All vacuum components meet ASTM F1712-20 specifications for cleanroom-compatible materials. The platform supports full traceability per ISO 9001:2015 and is preconfigured for FDA 21 CFR Part 11-compliant electronic records and signatures when paired with SENTECH’s certified ProcessLog™ software suite.
Software & Data Management
Operation is managed via SENTECH’s ProcessControl™ GUI—a deterministic, real-time Linux-based environment supporting recipe-driven execution, inter-chamber synchronization, and dynamic parameter adjustment during run. The software includes built-in statistical process control (SPC) engines, automated fault detection and classification (FDC), and audit-trail logging compliant with GLP/GMP requirements. Data export adheres to SECS/GEM protocol for factory automation integration; raw sensor streams (RF harmonics, OES spectra, pressure transients) are archived in HDF5 format for post-run plasma diagnostics and DOE analysis.
Applications
- High-aspect-ratio silicon etching for MEMS and through-silicon vias (TSVs) using Bosch or cryogenic processes
- Atomic-layer etching (ALE) of III–V materials with sub-nanometer precision
- Low-k dielectric patterning with minimal sidewall damage and profile control
- Multi-step heterostructure fabrication: ALD Al₂O₃ passivation → ICP SiNₓ etch → PECVD SiO₂ capping
- Surface activation and functionalization prior to bonding or epitaxy
- Process window qualification and technology transfer from R&D to pilot line
FAQ
What vacuum level is maintained in the transfer chamber?
The transfer chamber achieves and sustains ≤1×10⁻⁷ mbar after bake-out, verified by residual gas analysis (RGA) and monitored continuously via ion gauge.
Can the system be upgraded from a 3-port to a 6-port configuration post-installation?
Yes—modular port plates and re-routed vacuum manifolds allow field upgrades without chamber disassembly or recalibration.
Is remote diagnostics and preventive maintenance supported?
All SENTECH multi-chamber systems include embedded Telematics Module (ETM) for secure, encrypted remote access to system health metrics, predictive component lifetime estimation, and firmware update deployment.
Does the platform support cluster tool scheduling protocols?
Yes—the ProcessControl™ scheduler implements SECS/GEM HSMS communication and supports standard cluster tool dispatch logic (e.g., FIFO, priority-based, lot-size-aware).
Are process recipes portable between different SENTECH multi-chamber tools?
Recipe definitions are stored in XML-based schema compliant with SEMI E10 and E30 standards, ensuring full cross-tool compatibility and version-controlled revision history.
