SUNJUNE VP-RS6 Plasma Resist Stripper

Overview

The SUNJUNE VP-RS6 Plasma Resist Stripper is a benchtop, vacuum-based reactive ion etching (RIE) system engineered for high-fidelity photoresist removal, surface activation, and controlled plasma modification of microelectronic and advanced material substrates. Operating at the industry-standard 13.56 MHz radio frequency, the system generates low-temperature, non-thermal plasma under controlled vacuum conditions (typically 10–100 Pa), enabling precise, non-damaging stripping of organic resist layers without thermal degradation or substrate warping. Its 500 W RF power delivery is optimized for balanced ion energy and radical density—critical for achieving high selectivity between resist and underlying layers (e.g., SiO₂, SiNₓ, ITO, or metal interconnects) in semiconductor fabrication workflows. The all-stainless-steel (AISI 304) vacuum chamber ensures long-term corrosion resistance, ultra-low outgassing, and compatibility with aggressive process gases (O₂, CF₄, Ar/O₂ mixtures). With chamber wall temperature maintained below 45 °C even during sustained full-power operation (3 min), the VP-RS6 meets stringent thermal budget requirements for temperature-sensitive substrates such as PDMS, PET, graphene, and flexible electronics.

Key Features

• Robust 304 stainless steel vacuum chamber with electropolished interior surface for minimal particle generation and enhanced cleaning repeatability
• Dual independent gas inlets equipped with precision solenoid valves and calibrated flow control—enabling reproducible gas mixing (e.g., O₂/Ar, CF₄/O₂) for tailored etch chemistry
• Integrated digital vacuum gauge with real-time pressure readout (range: 1 × 10⁻³ to 1 × 10² Pa), supporting both roughing and process pressure monitoring
• 7-inch industrial-grade capacitive touchscreen HMI with intuitive icon-driven workflow navigation—no external PC required
• Fully automated sequence logic: chamber door status auto-sensed, vacuum pump start/stop synchronized with process cycle, post-treatment venting with regulated N₂ purge
• Embedded control firmware (certified under China Copyright No. 2021SR1026389) supports parameter logging, user-defined recipe storage (up to 99 profiles), and timestamped event history
• Compliance-ready architecture: supports audit trail export (CSV), password-protected admin mode, and configurable user access levels per ISO 9001 and GLP-aligned lab practices

Sample Compatibility & Compliance

The VP-RS6 demonstrates broad compatibility across planar and structured substrates used in microfabrication and materials science. Validated applications include photoresist stripping from 2–8 inch silicon wafers, ITO-coated glass, quartz, fused silica, sapphire, and compound semiconductors (GaN, SiC). It is routinely employed for surface hydrophilization of PDMS prior to microfluidic bonding, ashing of carbonaceous residues (e.g., “coal ash” simulation layers), functionalization of graphene oxide films, and pre-deposition activation of PET and PI flex circuits. All operational parameters—including RF forward/reflected power, chamber pressure, gas composition, and treatment time—are traceable and repeatable per ASTM F2627-21 (Standard Practice for Plasma Cleaning of Semiconductor Wafers) and aligned with JEDEC JESD22-A108F (Moisture Resistance Testing) preconditioning protocols. The system’s low thermal load satisfies USP <1058> analytical instrument qualification criteria for non-destructive sample handling.

Software & Data Management

The embedded control software provides deterministic, deterministic process execution without dependency on external operating systems. Each run logs critical parameters—including actual RF power (W), chamber pressure (Pa), gas flow rates (sccm), elapsed time, and door open/close events—with UTC timestamps. Data export is supported via USB 2.0 port in CSV format, compatible with LIMS integration and statistical process control (SPC) platforms. The system supports electronic signature-capable user authentication (role-based: Operator, Technician, Administrator), meeting FDA 21 CFR Part 11 requirements for electronic records when deployed in regulated environments (e.g., medical device R&D labs). Firmware updates are delivered via signed binary packages verified using SHA-256 checksums, ensuring integrity and version traceability.

Applications

• Semiconductor backend processing: post-lithography resist removal, via/trench cleaning prior to metallization
• MEMS and microfluidics: PDMS surface oxidation for irreversible bonding to glass/silicon; removal of SU-8 residue after development
• Flexible electronics: low-temperature ashing of photopolymer residues on PET, PEN, and PI substrates without dimensional distortion
• 2D materials research: gentle removal of PMMA transfer support layers from graphene/CVD MoS₂ without defect generation
• Optoelectronics: ITO surface activation to improve adhesion and reduce contact resistance in OLED/LED fabrication
• Academic and industrial R&D: surface energy tuning, hydrophobic-to-hydrophilic transition, and nanoscale topography modification for AFM/SEM sample prep

FAQ

What vacuum level is required for stable plasma ignition?
Stable plasma ignition occurs between 10–50 Pa (75–375 mTorr); optimal resist stripping performance is achieved at 20–30 Pa using pure O₂ at 50–100 sccm.
Can the VP-RS6 be integrated into a glovebox environment?
Yes—the VP-RS6 chassis dimensions (W450 × D480 × H420 mm) and rear-mounted gas/vacuum ports allow direct mounting inside Class 1000+ inert-atmosphere gloveboxes; optional VP-G series models are specifically engineered for internal glovebox installation.
Is remote monitoring or network connectivity supported?
The base model operates as a standalone unit; optional Ethernet module (VP-RS6-ETH) enables Modbus TCP communication for SCADA integration and centralized fleet monitoring.
How is process reproducibility ensured across multiple users?
Each saved recipe includes full parameter lock (gas flows, power, time, pressure setpoint), and operator actions are logged with UID and timestamp—supporting root-cause analysis and compliance with ISO/IEC 17025 clause 7.7.
Does the system support reactive gas chemistries beyond oxygen?
Yes—dual-gas capability supports sequential or mixed chemistries including Ar/O₂, CF₄/O₂, and SF₆/O₂; gas line compatibility is rated for Class 3 corrosive gases per SEMI F57 standards.