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VC Plasma AP-C350 Atmospheric Pressure Plasma Cleaning System

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Brand VC Plasma
Origin Guangdong, China
Manufacturer Type Authorized Distributor
Country of Origin China
Model AP-C350
Pricing Available Upon Request

Overview

The VC Plasma AP-C350 is an industrial-grade atmospheric pressure plasma cleaning system engineered for precision surface activation, contamination removal, and functionalization of substrates in semiconductor manufacturing, microelectronics packaging, and advanced assembly processes. Unlike low-pressure plasma systems requiring vacuum chambers and extended pump-down cycles, the AP-C350 operates at ambient pressure using a stable, non-thermal plasma jet generated by high-frequency RF excitation (typically 13.56 MHz or 40 kHz, configurable per application). This enables seamless integration into inline production environments—eliminating batch processing delays while maintaining nanoscale control over surface energy modulation (measured as dyne/cm), oxide layer reduction, and organic residue abatement (e.g., photoresist residuals, solder flux residues, silicone oils). The system is purpose-built for cleanroom-compatible deployment in Class 100–Class 1000 environments and conforms to SEMI S2-0216 safety guidelines for semiconductor equipment.

Key Features

  • Integrated龙门-style gantry frame with reinforced aluminum alloy construction—designed for mechanical rigidity, vibration damping, and long-term positional repeatability (< ±5 µm over 500 mm travel)
  • Six-axis motion platform driven by Panasonic MINAS A6 series servo motors with absolute encoders, enabling synchronized multi-directional nozzle positioning and complex trajectory scanning (e.g., helical, raster, contour-following)
  • PC-based industrial control architecture running real-time C++ motion control firmware—supporting deterministic I/O response (< 1 ms cycle time) and programmable process sequencing via EtherCAT or RS-485 interfaces
  • Low-temperature plasma operation (gas surface temperature < 60 °C at 5 mm standoff)—ensuring thermal safety for temperature-sensitive substrates including flexible PCBs, OLED panels, and bare die
  • Modular plasma source design compatible with multiple gas chemistries: compressed air (for general cleaning), N₂ (for inert activation), O₂ (for oxidation and hydrocarbon removal), and Ar/O₂ mixtures (for enhanced etch rate control)
  • Zero consumables architecture—no electrodes requiring periodic replacement; ceramic dielectric nozzles rated for >10,000 hours of continuous operation under nominal duty cycles

Sample Compatibility & Compliance

The AP-C350 accommodates substrates ranging from 25 × 25 mm wafers to 300 × 400 mm PCB panels and irregularly shaped components (e.g., lead frames, sensor housings, MEMS packages). It supports direct treatment of silicon, SiO₂, SiNₓ, gold-plated contacts, polyimide, FR-4, LCP, and molded compound surfaces without masking or fixturing. All electrical subsystems comply with CE/EMC Directive 2014/30/EU and meet UL 61010-1 requirements for laboratory and industrial equipment. Software logs—including gas flow rates, RF power delivery, exposure duration, and positional coordinates—are timestamped and exportable in CSV/Excel format to support ISO 9001:2015 quality documentation and internal GLP audit trails.

Software & Data Management

The VC Plasma Control Suite (v4.2+) provides intuitive GUI-based recipe management, real-time plasma parameter monitoring (forward/reflected RF power, gas pressure, nozzle temperature), and automated calibration routines for nozzle-to-substrate distance compensation. Process data is stored locally on an industrial SSD with optional network backup via FTP/SFTP. Audit trail functionality complies with FDA 21 CFR Part 11 requirements when configured with user role-based access control (admin/operator/technician tiers), electronic signatures, and immutable log archiving. Integration with MES platforms (e.g., Siemens Opcenter, Rockwell FactoryTalk) is supported through OPC UA server implementation.

Applications

  • Pre-wire bonding surface conditioning to increase Au-Al intermetallic adhesion strength and reduce void formation
  • Removal of amine inhibitors and mold release agents prior to conformal coating (e.g., parylene, silicone, acrylic)
  • Enhancement of epoxy adhesion on ceramic substrates used in high-power LED packaging
  • Cleaning of stencil apertures and solder paste residues during SMT rework processes
  • Activation of polymer surfaces (e.g., PTFE, PE, PP) prior to metallization or inkjet printing
  • In-line pre-soldering treatment of copper pads to eliminate CuO and improve wetting angle consistency (measured via contact angle goniometry)

FAQ

What gases are supported, and how do they affect cleaning performance?
The AP-C350 supports compressed air, nitrogen, oxygen, and argon-based mixtures. Oxygen-rich plasmas maximize organic removal (TOC reduction >95% per ASTM D7261-19); nitrogen enhances surface amine group formation for adhesive bonding; argon improves uniformity on rough topographies.
Is the system compatible with existing factory automation protocols?
Yes—it features native EtherCAT master capability, Modbus TCP, and discrete I/O signals for PLC handshake (start/stop/ready/fault), enabling full integration into Industry 4.0 production lines.
Does the AP-C350 require facility vacuum infrastructure?
No. It operates exclusively at atmospheric pressure and only requires standard 220 VAC / 50 Hz power, dry compressed air (0.6 MPa), and optional process gas supply lines.
Can it treat 3D components with undercuts or recessed features?
Yes—six-axis articulation allows dynamic nozzle orientation to maintain optimal plasma incidence angle (±15° tolerance) across complex geometries, verified via in-process optical emission spectroscopy (OES) feedback.
What maintenance intervals are recommended?
Daily visual inspection of nozzle integrity; quarterly verification of RF impedance matching network calibration; annual full system validation per VC Plasma PQ-AP350 protocol (includes dyne test strip correlation and contact angle benchmarking).

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