ZhiCheng Customized-3 Horizontal Semiconductor Electroplating System
| Brand | ZhiCheng |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | Customized-3 |
| Wafer Size | 150 mm – 300 mm |
| Uniformity Performance | Within-Wafer (WiW) ≤ 5%, Within-Lot (WtW) ≤ 5%, Run-to-Run (RtR) ≤ 5% |
| Configuration | Up to 3 Loadports, Up to 24 Plating Chambers (Cu, Ni, Sn/Ag, Au), Up to 4 Pre-wet Chambers, Up to 4 Rinse Chambers |
| Chamber Architecture | Horizontal, Cross-Contamination-Free |
| Maintenance Design | Modular |
| Sealing Technology | Elastomeric Gasket Sealing |
| Electrode Isolation | Anode-Cathode Separation for Electrolyte Stability |
Overview
The ZhiCheng Customized-3 Horizontal Semiconductor Electroplating System is an engineered solution for advanced front-end and back-end semiconductor wet processing, specifically designed to meet the stringent metallization requirements of 3D interconnect structures. Operating on the principle of controlled direct-current electrodeposition in a horizontal configuration, the system enables precise, conformal metal film growth on patterned wafers—critical for pillar formation, copper microbumps, redistribution layers (RDL), and through-silicon vias (TSV). Unlike vertical or fountain-type platers, its horizontal architecture ensures uniform electrolyte flow dynamics across the entire wafer surface, minimizing boundary layer effects and enabling reproducible thickness control at sub-micron feature scales. The system supports full 150 mm to 300 mm wafer handling and integrates real-time process monitoring interfaces compatible with factory automation standards (SECS/GEM).
Key Features
- Horizontal electroplating architecture with laminar electrolyte delivery—eliminates bubble entrapment and ensures consistent mass transport to high-aspect-ratio features.
- Anode-cathode physical separation design prevents metal ion contamination from anode dissolution, enhancing bath lifetime and reducing particle generation.
- Elastomeric gasket sealing system achieves >10⁻⁶ mbar vacuum integrity between process zones, preventing cross-contamination between Cu, Ni, Sn/Ag, and Au chemistries.
- Modular chamber layout allows hot-swap replacement of plating, pre-wet, and rinse modules without system shutdown—supporting >92% tool uptime in high-mix production environments.
- Configurable loadport capacity (up to 3 FOUPs or open cassettes) with integrated wafer alignment and edge exclusion mapping for automated recipe-driven processing.
- Real-time current density profiling via segmented cathode busbars, enabling closed-loop adjustment of plating parameters per zone to compensate for edge effects.
Sample Compatibility & Compliance
The Customized-3 accommodates standard SEMI-compliant 150 mm, 200 mm, and 300 mm wafers—including those with low-k dielectrics, silicon carbide substrates, and temporary carrier-bonded structures. It supports industry-standard photoresists and barrier layers (e.g., Ta/TaN, CoWP) and is validated for use with acidic sulfate-based Cu plating chemistries (e.g., Enthone ViaForm™, Technic CUBR™), Ni–P, Sn–Ag eutectic, and thin-film Au strike processes. All wetted materials comply with SEMI F57 (Chemical Compatibility) and ASTM F2169 (Wafer Handling Safety). The system architecture meets ISO 14644-1 Class 5 cleanroom integration requirements and supports audit-ready documentation per ISO 9001:2015 and IATF 16949 quality management systems.
Software & Data Management
The system runs on ZhiCheng’s proprietary ProcessMaster™ control platform—a deterministic real-time OS compliant with SEMI E30 (GEM) and E40 (Equipment Model). It provides full traceability including wafer ID, lot history, recipe version, chamber utilization logs, and electrochemical parameter snapshots (voltage, current, temperature, pH, ORP). Audit trails are time-stamped, digitally signed, and immutable—meeting FDA 21 CFR Part 11 requirements for electronic records and signatures. Data export supports CSV, XML, and OPC UA protocols for integration into MES (e.g., Applied Materials EnduraLink, PDF Solutions Exensio) and SPC platforms. Optional GLP/GMP mode enforces dual-operator authentication for critical process steps.
Applications
- Copper electroplating for TSV filling in 3D stacked memory and image sensor applications.
- Microbump formation (20–50 µm pitch) using Sn–Ag or Ni–Au alloys for flip-chip and hybrid bonding.
- RDL metallization with low-stress Ni–P or Co–W–P films for fan-out wafer-level packaging (FOWLP).
- Seed layer repair and selective top-layer plating in advanced heterogeneous integration flows.
- Research-scale development of novel electrolytes and pulse-reverse plating waveforms for ultra-low defectivity.
FAQ
What wafer sizes does the Customized-3 support?
It handles 150 mm, 200 mm, and 300 mm wafers with automatic size detection and chuck adaptation.
Can the system run multiple plating chemistries concurrently?
Yes—its segregated chamber architecture and independent fluid manifolds allow simultaneous operation of Cu, Ni, Sn/Ag, and Au processes without cross-chemistry contamination.
How is process uniformity verified and maintained?
Uniformity is monitored via integrated eddy-current and XRF thickness sensors; WiW/WtW/RtR performance is tracked daily using NIST-traceable reference wafers and reported in SPC dashboards.
Is remote diagnostics and predictive maintenance supported?
Yes—the system includes embedded vibration, thermal, and current signature analytics with cloud-enabled telemetry (optional) for OEM-level root-cause analysis and spare-part forecasting.
Does ZhiCheng provide installation qualification (IQ) and operational qualification (OQ) documentation?
Yes—all systems ship with fully executed IQ/OQ protocols aligned with ISO/IEC 17025 and SEMI E10 standards, including calibration certificates for all metrology subsystems.
