Thermal Process/Heat Treatment Equipment
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Showing 31–41 of 41 results
| Brand | BEIJING EAST STAR LABS |
|---|---|
| Origin | Beijing, China |
| Model | RTP800V |
| Instrument Type | High-Vacuum Rapid Annealing Furnace |
| Sample Size | 200 mm (8-inch) wafers |
| Temperature Range | 150–1300 °C |
| Maximum Ramp Rate | 1–200 °C/s |
| Cooling Rate | ≥80 °C/s |
| Vacuum Level | ≤5×10⁻⁵ Pa (standard configuration) |
| Control Architecture | Multi-zone adaptive thermal regulation with non-PID real-time feedback |
| Compliance | Designed for ISO/IEC 17025-aligned lab environments |
| Brand | BEQ |
|---|---|
| Origin | Anhui, China |
| Model | BTF-1200C-RTP-CVD |
| Temperature Range | 100–1000 °C |
| Max Heating Rate | 50 °C/s |
| Max Operating Temperature | 1200 °C |
| Vacuum Base Pressure | 5.0×10⁻¹ Pa (cold, empty) |
| Heating Zone Length | 230 mm |
| Uniform Zone Length | 120 mm |
| Temperature Repeatability | ±3 °C |
| Control Accuracy | ±0.1 °C |
| Furnace Tube | High-Purity Quartz, Φ90×400 mm, R45 end cap |
| Gas Flow Controllers | Dual-stainless-steel double-ferrule fittings, N₂-calibrated ranges 200/500 sccm, accuracy ±1.5%, repeatability ±0.2%, response time 1–4 s (gas), 10 s (electrical) |
| Vacuum Pump | KF25 inlet/outlet, 165 L/min pumping speed, 1.1 L oil capacity |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | centrotherm Activator150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 150 mm (6-inch) wafers |
| Operating Atmosphere | Ambient pressure or controlled vacuum/pressure |
| Maximum Ramp Rate | 150 K/s |
| Maximum Cool-down Rate | 150 K/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ≥95% across wafer surface |
| Max Process Temperature | 1850 °C |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | Centrotherm c.RAPID 150 / RTP 150 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 6-inch wafer or substrate |
| Operating Atmosphere | Ambient pressure or controlled vacuum (1–50 mbar) |
| Max. Ramp Rate | 150 K/s |
| Max. Cool-down Rate | 150 K/s |
| Temperature Accuracy | ±1 °C |
| Temperature Uniformity | ±0.5 °C across 6″ wafer |
| Max. Process Temperature | 1150 °C (unlimited dwell at ≤750 °C) |
| Heating System | 24 independently PWM-controlled lamp arrays |
| Cooling Water Requirement | 20 L/min |
| Exhaust Flow | 250 m³/h |
| Substrate Compatibility | Si, GaAs, SiC, GaN, Sapphire, graphite carriers |
| Brand | CYKY |
|---|---|
| Origin | Henan, China |
| Manufacturer Type | Direct Manufacturer |
| Equipment Type | Standard High-Vacuum RTP Furnace |
| Sample Chamber Dimensions | 650 × 1200 × 650 mm (D×W×H) |
| Operating Temperature Range | ≤1000 °C continuous, up to 1050 °C peak |
| Max Recommended Ramp Rate | ≤80 °C/s |
| Maximum Ramp Rate | 200 °C/s |
| Cooling Time from >200 °C | ≤25 min |
| Heating Zone Length | 400 mm |
| Chamber Atmosphere | Vacuum-compatible (optional low/high vacuum systems) |
| Power Supply | AC 220 V, 50/60 Hz, 45 kW |
| Net Weight | 185 kg |
| Heating Element | Imported IR Lamps |
| Temperature Sensor | N-type thermocouple (optional embedded thermocouple for sample-surface monitoring) |
| Control System | Touchscreen PID with auto-tuning, 8-segment programmable ramp/soak profiles |
| Accuracy | ±1 °C |
| Vacuum & Gas Interfaces | Standardized quick-connect ports for vacuum lines and multi-channel gas manifolds |
| Communication | RS-485 interface for PC integration via proprietary software |
| Brand | ECOPIA |
|---|---|
| Origin | South Korea |
| Model | RTP-1300 |
| Sample Size | 150 mm (6-inch compatible) |
| Max Temperature | 1200 °C |
| Max Ramp Rate | 150 K/s |
| Cool-down Rate | 200 K/s |
| Temp Accuracy | ±1% of setpoint |
| Temp Uniformity | ±1.5% across wafer |
| Atmosphere Options | Vacuum (10⁻³ Torr, optional mechanical pump), N₂, O₂, H₂, Ar, or ambient air |
| Heating Source | 12 or 18 halogen infrared lamps (1.2 kW each) |
| Control Software | Integrated RTP-specific GUI with recipe management, real-time profiling, and data logging |
| Power Supply | 220 V AC, single- or three-phase |
| Dimensions (W×D×H) | 500 × 400 × 500 mm |
| Net Weight | 60 kg |
| Brand | NAURA |
|---|---|
| Origin | Beijing, China |
| Model | HORIC D200 Series |
| Wafer Sizes | 4", 6", 8" |
| Compatible Substrates | Silicon (Si), Silicon Carbide (SiC), Silicon-on-Gallium Nitride (Si/GaN) |
| Process Capabilities | Phosphorus Diffusion, Boron Diffusion, Thermal Oxidation, Annealing, Alloying |
| Application Domains | R&D Laboratories, Compound Semiconductor Fabrication |
| Compliance | GB/T Standards, IEC 61000-6-2/6-4, SEMI S2-0215, CE Marked (EMC & LVD) |
| MES Integration | SECS/GEM, OPC UA, Custom API Support |
| Brand | Thermic Edge |
|---|---|
| Origin | United Kingdom |
| Model | TE2000, TE3000 |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Maximum Operating Temperature | 2100 °C (vacuum), 2600 °C (inert atmosphere with tungsten heating zone), 3000 °C (graphite heating zone) |
| Vacuum Level | Down to 5 × 10⁻⁸ mbar (with Edwards EXT75DX turbomolecular pump) |
| Sample Capacity | Up to 200 mm (8-inch) wafers |
| Temperature Uniformity | < ±1% across heating zone |
| Temperature Accuracy | Better than ±1% of setpoint |
| Ramp Rate | ≥100 °C/min (heating), up to 200 °C/s (controlled cooling) |
| Pressure Control Precision | < ±0.5 bar |
| Heating Zone Materials | Graphite or tungsten |
| Vacuum Interface Standard | ISO-KF63 or KF25 |
| Cooling System | Integrated water-cooling circuit |
| Safety Systems | Interlocked electronic door lock, real-time O₂ purge logic, over-temperature and over-pressure alarms, LED status indicators |
| Brand | ULTECH |
|---|---|
| Origin | South Korea |
| Model | ULTECH REAL RTP-100 |
| Instrument Type | High-Vacuum Rapid Annealing Furnace |
| Sample Chamber Dimensions | 870 mm × 650 mm × 620 mm |
| Temperature Range | 100–1250 °C |
| Maximum Ramp Rate | 10–200 °C/s |
| Annealing Temperature Accuracy | ±1.5 °C |
| Temperature Uniformity | ±1.5 °C |
| Vacuum Base Pressure | 5×10⁻³ Torr (standard), down to 5×10⁻⁶ Torr (with dual-stage molecular pump) |
| Gas Lines | Up to 3 MFC-controlled channels |
| Substrate Compatibility | 4-inch wafers |
| Brand | UniTemp |
|---|---|
| Origin | Germany |
| Model | RTP-200-HV |
| Instrument Type | High-Vacuum Rapid Thermal Annealing Furnace |
| Sample Size | 200 mm (8-inch wafer) |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤1×10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top & bottom) |
| Cooling Method | Water-cooled chamber + N₂ purge for substrate |
| Gas Control | Up to 4 MFC-controlled lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Control System | SIMATIC S7-based PLC with 7″ HMI touchscreen |
| Program Storage | 50 multi-segment recipes (up to 50 steps each) |
| Dimensions (W×D×H) | 505 × 504 × 420 mm |
| Weight | ~55 kg |
| Brand | Zhuochi |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Regional Category | Domestic (PRC) |
| Model | KSX3-5-1200 |
| Instrument Type | High-Vacuum Rapid Annealing Furnace |
| Chamber Dimensions | 300 × 300 × 300 mm (L×W×H) |
| External Dimensions | 620 × 660 × 920 mm |
| Temperature Range | Ambient to 1200 °C |
| Max. Heating Rate | ≤50 °C/min |
| Cooling Rate | ≤20 °C/min |
| Temperature Uniformity | ±1 °C |
| Display Resolution | 1 °C |
| Heating Element | High-Temperature Resistance Wire |
| Insulation | Lightweight Refractory Fiber Board + Insulating Bricks & Ceramic Fiber Blanket |
| Thermocouple Type | K-Type |
| Power Supply | 220 V, 50 Hz |
| Total Power | 5 kW |
| Vacuum Capability | Integrated High-Vacuum System (User-Provided Pump Required) |
| Atmosphere Options | Inert Gas (N₂, Ar) or Reducing/Neutral Mixtures via Dual-Valve Gas Inlet/Outlet |
| Cooling Interface | Water-Cooled Flange with External Chiller Connection (Low-Temp Circulator Recommended) |