Thin Film Growth Equipment
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| Brand | Oxford Instruments |
|---|---|
| Origin | United Kingdom |
| Model | ALD OpAL |
| Substrate Size | Up to 200 mm |
| Process Temperature | Up to 200 °C |
| Precursor Sources | Up to 4 (liquid or solid) |
| Plasma-Enhanced ALD Capability | Optional, field-upgradable |
| Chamber Design | Direct-load, open-frame thermal ALD platform |
| Safety Integration | Compatible with N₂-purged gloveboxes and exhaust hoods |
| Service Support | Lifetime process support, including new recipe development and material-specific optimization guidance |
| Brand | Picosun |
|---|---|
| Origin | Finland |
| Model | P-300B |
| Substrate Size | 8-inch (200 mm) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 8 |
| System Weight | 150 kg |
| Thickness Uniformity | ±1.5% (1σ, across 8″ wafer or batch load) |
| Origin | Finland |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | R-Series |
| Price Range | USD 135,000 – 270,000 (FOB Helsinki) |
| Substrate Size | 50–200 mm (2″–8″, 8″ available on request) |
| Process Temperature | Up to 500 °C |
| Precursor Channels | 2–6 (gas, vaporized liquid, or solid-source compatible) |
| Weight | 200 kg |
| Dimensions (W × H × D) | 70 × 105 × 92.5 cm |
| Uniformity | < ±1% across 200 mm wafers (typical, SiO₂ on Si) |
| Brand | Plasma-Therm |
|---|---|
| Origin | USA |
| Equipment Type | Imported Semiconductor CVD System |
| Model | PECVD Series |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor Fabrication, MEMS, III-V & Wide-Bandgap Devices (GaAs, SiC, CPV), LED, SOI, TSV |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Pressure | 1×10⁻⁶ mbar |
| Operating Pressure Range | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm, Z-axis motorized translation |
| Plasma Source | 915 MHz, up to 36 kW microwave generator |
| Process Duration Capability | Up to 500 h continuous operation |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR400 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor & Advanced Materials |
| Deposition Rate | 1 µm/h (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure | 2–200 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Substrate Stage | Ø158 mm with Z-axis motion |
| Microwave Frequency | 915 MHz |
| Max Microwave Power | 36 kW |
| Process Duration Capability | Up to 500 h (continuous) |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Field | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis motion |
| Max. Continuous Process Duration | ≥3 weeks |
| Temperature Control | Precision ±1°C over full operating range |
| Brand | Axic |
|---|---|
| Origin | France |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SSDR150 |
| Heating Method | Hot-Wall |
| Application Domain | Semiconductor |
| Deposition Rate | 1 nm/s (typical for diamond growth) |
| Base Vacuum | 1×10⁻⁶ mbar |
| Operating Pressure Range | 20–400 mbar |
| Chamber Internal Diameter | 6 inch (Ø152 mm) |
| Microwave Power | 6 kW @ 2.45 GHz |
| Substrate Stage | Ø60 mm with Z-axis translation |
| Temperature Control | Up to 1200 °C (±2 °C stability) |
| Brand | Qiyue Technology |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MINI-ALD4 |
| Substrate Size | Up to 100 mm (4-inch) wafers |
| Chamber Architecture | Dual-chamber (reaction + load-lock) |
| Heating System | Radiant heating with high temperature uniformity |
| Gas Delivery | Optimized laminar flow path with precursor bottle heating, heated transfer lines, and adjustable pulsing sequence |
| Optional Modules | Plasma source, powder ALD module, ozone generator |
| Film Compatibility | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), nitrides (e.g., TiN, TaN), pure metals (e.g., Pt, Ru), and doped compounds |
| Brand | RIBER |
|---|---|
| Origin | France |
| Model | MBE 8000 |
| Substrate Size | 8×6″ or 4×8″ |
| Base Vacuum | ≤1.0×10⁻¹⁰ Torr |
| Thickness Uniformity (InGaAs/GaAs SL on 8×6″ platen) | ±1.5% |
| Composition Uniformity (InGaAs/GaAs SL) | ±1.5% |
| AlAs/GaAs SL Thickness Uniformity | ±1.5% |
| Si Doping Standard Deviation Uniformity | <3% |
| Fabry–Perot Dip Wavelength Uniformity (8×6″ wafer) | Δλ < 3 nm |
| Background Carrier Density | 7×10¹⁴ cm⁻³ |
| HEMT Electron Mobility @ RT | 6000 cm²·V⁻¹·s⁻¹ |
| HEMT Electron Mobility @ 77 K | 120,000 cm²·V⁻¹·s⁻¹ |
| GaN-based HEMT Mobility @ 77 K | 178,000 cm²·V⁻¹·s⁻¹ |
| InGaAs/GaAs Superlattice Thickness | 298 Å ± 2 Å |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-100ST |
| Substrate Diameter | Ø100 mm (4") |
| Deposition Temperature Range | 80–400 °C |
| SiO₂ Deposition Rate | >300 nm/min |
| Maximum Film Thickness | Up to 100 µm |
| Deposition Technology | Liquid-source PECVD with RF self-bias coupling |
| Precursor Type | Liquid TEOS (tetraethyl orthosilicate), optional Ge/P/B dopant sources |
| Stress Control | Low-stress SiO₂ via self-bias tuning |
| Step Coverage | High-aspect-ratio conformality |
| Footprint | Compact, cleanroom space-optimized |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | PD-220N |
| Wafer Capacity | 5 × ø3″, 3 × ø4″, or 1 × ø8″ wafers |
| Footprint Reduction | 40% vs. legacy SAMCO PECVD platforms |
| Process Gases | SiH₄, NH₃, N₂O, TEOS (optional add-on), O₂, Ar, N₂ |
| Plasma Source | RF (13.56 MHz) capacitive coupling |
| Chamber Material | Anodized aluminum with quartz-lined process zone |
| Vacuum System | Dry scroll pump + optional turbo-molecular pump |
| Compliance | CE-marked, compatible with ISO 14644-1 Class 5 cleanroom integration |
| Brand | Shenyang K.Y. |
|---|---|
| Origin | Liaoning, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | PVD400 |
| Instrument Type | Magnetron Sputtering Coater |
| Application Field | Microelectronics |
| Substrate Size | Ø100 mm (1 × 4-inch wafer) |
| Targets | Three Ø50.8 mm (2-inch) Permanent-Magnet DC/RF Sputtering Targets |
| Maximum Substrate Temperature | 800 °C |
| Thickness Uniformity (within wafer) | ≤ ±3% |
| Base Vacuum | ≤ 6.6 × 10⁻⁵ Pa |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Model | Glove Box Integrated |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | RT to 500 °C (customizable) |
| Precursor Channels | Up to 6 (solid & liquid sources supported, customizable) |
| Reactant Gas Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Plasma Gas Channels | 4 (customizable) |
| RF Power | 0–1000 W |
| Pressure Measurement | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5×10⁻³ Torr |
| Vacuum Pump | Standard oil-sealed rotary vane pump |
| Control System | 19″ industrial touch display, embedded IPC running Windows 7, PLC-based real-time control with fieldbus support |
| Source Bottle Heater | RT–200 °C |
| Glove Box Integration | Dual-glove, single-station configuration (customizable) |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | PA Series |
| Process Temperature Range | RT to 450°C |
| Precursor Channels | Up to 4 (customizable), supporting solid & liquid precursors |
| Reactant Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Pressure Monitoring | Triple corrosion-resistant capacitance manometers, 0.005–1000 Torr |
| Base Vacuum | <5×10⁻³ Torr |
| Heating Zone Temperature Range | RT to 150°C |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Domestic (China) |
| Model | PEALD E200SP |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | Room Temperature to 500 °C (customizable) |
| Precursor Channels | Up to 6 independent precursor lines (solid & liquid sources, customizable) |
| Reactant Gas Lines | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Plasma Gas Lines | 4 (customizable) |
| RF Power | 0–1000 W |
| Pressure Measurement | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5 × 10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touch-enabled HMI, embedded IPC, Windows 7 OS, PLC-based real-time control |
| Source Bottle Heating | RT–200 °C (independent modules) |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Thermal-ALD E300S |
| Substrate Size | 300 mm (12 inch) diameter (customizable) |
| Process Temperature Range | RT to 500 °C |
| Temperature Uniformity | ±1 °C (customizable) |
| Precursor Channels | Up to 6 independent, supporting solid & liquid precursors with heated source bottles |
| Reactant Channels | 2 (customizable) |
| Carrier Gas | N₂ with MFC flow control (customizable) |
| Pressure Range | 0.005–1000 Torr (dual corrosion-resistant capacitance manometers) |
| Base Pressure | <5 × 10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touchscreen HMI, embedded IPC running Windows 7, PLC-based real-time logic control with fieldbus support |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | UHV ALD |
| Quotation | Upon Request |
| Substrate Diameter | 100 mm (4 inch), customizable |
| Process Temperature Range | RT to 400 °C, ±1 °C accuracy (customizable) |
| Precursor Channels | Up to 6 independent, supporting solid and liquid precursors with dedicated heated source bottles |
| Reactant Channels | 2 standard (customizable) |
| Carrier Gas | N₂ with MFC-controlled flow (customizable) |
| Vacuum System | High-performance turbomolecular pump suite for ultra-high vacuum (UHV) base pressure <5×10⁻⁸ mbar |
| Heating Capability | Source bottles and reactor zone heated up to 150 °C |
| Control System | Industrial embedded IPC with 19″ capacitive touchscreen, Windows 7 OS, real-time PLC-based logic control via Ethernet |
| Transfer System | Manual magnetic wand loading with dedicated load-lock chamber, gate valves, and integrated vacuum interlocks |
| Origin | Germany |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | PLD-Workstation |
| Price Range | USD 650,000 – 13.5 million |
| Brand | SurfaceTech |
|---|---|
| Origin | Germany |
| Model | Laser MBE |
| Vacuum Class | Ultra-High Vacuum (UHV) |
| Base Pressure | ≤5×10⁻¹⁰ mbar (typical) |
| Substrate Heater | Resistive, 100–1000 °C (±0.5 °C stability) |
| Target Capacity | Up to 5 × 1-inch targets on rotating carousel |
| Laser Integration | Nd:YAG or excimer laser compatible (193–266 nm, pulse energy up to 500 mJ, repetition rate 1–10 Hz) |
| Load-Lock Capacity | 5 substrates + 2 target carousels |
| In-situ Diagnostics Ports | RHEED, OES, FTIR, QMS (CF-63/CF-100 flanges) |
| Automation Level | Fully programmable deposition sequence with real-time parameter logging and audit trail |
| Compliance | Designed for GLP/GMP-aligned lab environments |
| Brand | SurfaceTech |
|---|---|
| Origin | Germany |
| Model | PLD-Workstation |
| Excimer Laser | Coherent COMPexPro 201F or 205F (248 nm) |
| Laser Gas | 20 L premixed KrF gas + 10 L He |
| Process Gases | 2× Mass Flow Controllers (MFC) |
| Substrate Heater | 2" up to 850 °C or 1"/3" up to 1000 °C |
| Substrate Rotation | 0–50 RPM |
| Target Carousel | 4×2" targets, rotation 0–50 RPM |
| Vacuum Chamber | Modular flanged design with multiple CF/NW ports |
| Control System | PC-based LabVIEW software with integrated TFT display |
| Dimensions | ~2200 × 850 × 1600 mm |
| Power Supply | 3×400 VAC/50 Hz or 3×208 VAC/60 Hz |
| Cooling | Integrated chiller unit |
| Compliance | CE-marked, Class 1 laser enclosure per IEC 60825-1 |
| Brand | SUPERALD |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | Thermal-ALD E200S |
| Substrate Size | 200 mm (8 inch) diameter (customizable) |
| Process Temperature Range | Room Temperature to 500 °C (customizable) |
| Precursor Channels | Up to 6 independent precursor lines (customizable), supporting both solid and liquid precursors with individual source heating (RT–200 °C) |
| Reactant Gas Lines | 2 (customizable) |
| Carrier Gas | N₂ with Mass Flow Controllers (MFCs) |
| Pressure Monitoring | Dual corrosion-resistant capacitance manometers (0.005–1000 Torr) |
| Base Vacuum | <5×10⁻³ Torr |
| Vacuum System | Standard oil-sealed rotary vane pump |
| Control System | 19-inch industrial touch-enabled display, embedded industrial PC (Windows 7), PLC-based real-time control with fieldbus support |
| Plasma Upgrade Port | Integrated PEALD interface for seamless thermal-to-plasma ALD mode transition without chamber replacement |
| Brand | Truth Instruments Company Limited |
|---|---|
| Origin | Anhui, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | PLD-400 |
| Base Pressure | 5×10⁻⁹ mbar |
| Substrate Heating Range | Room Temperature to 1200 °C |
| Target Configuration | Six 1-inch or Three 2-inch targets (motorized rotation and revolution) |
| Substrate Size | Up to 2-inch wafers |
| Optional Add-ons | Liquid Nitrogen Cryo-Cooling Stage, Load-Lock Transfer Module, Reactive Gas Inlet System (O₂, N₂, Ar), In-situ Quartz Crystal Microbalance (QCM), Predefined Process Recipe Management, High-Pressure RHEED (up to 1×10⁻⁵ mbar), Electron Gun for LEED |
| Brand | Vector Scientific |
|---|---|
| Origin | Guangdong, China |
| Model | SLKX-102-11 |
| Film Thickness Uniformity | ≤±2.5% over 4-inch wafer area, ≤±3.5% over 8-inch wafer area (measured on Ti film, 200–500 nm, edge exclusion of 5 mm, 5-point random sampling) |
| System Architecture | Interconnected multi-chamber PVD platform with load-lock and transfer robot |
| Base Pressure | ≤5×10⁻⁸ Torr (typical, after bake-out) |
| Chamber Interface Standard | CF flanges (DN100/DN160 compatible) |
| Target-to-Substrate Distance | Externally adjustable manually |
| Control Architecture | Modular PLC + real-time OS with role-based user permissions |
| Compliance | Designed to support GLP/GMP-aligned process documentation |
| Brand | Veeco |
|---|---|
| Origin | USA |
| Model | GEN10 |
| Configuration | Cluster-tool architecture with up to three material-specific growth chambers |
| Vacuum Integration | Ultra-high vacuum (UHV) integrated chamber system |
| Automation | Robotic wafer transfer for unattended operation |
| Application Scope | Research-grade III–V, II–VI, and elemental semiconductor epitaxy |
| Compliance Framework | Designed for GLP-compliant process documentation and ASTM F1529-22 compatible thin-film metrology workflows |