Wafer Prep/Crystal Growth Equipment
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| Brand | Accretech |
|---|---|
| Origin | Japan |
| Model | AD2000TS |
| Equipment Type | Semiconductor Wafer Slicing System |
| Application Domain | Silicon Wafer Dicing & Kerfless Slice Separation |
| Compliance Context | Designed for ISO 14644-1 Class 5 Cleanroom Integration |
| Control Architecture | CNC-based Closed-loop Motion Control with Real-time Vibration Damping |
| Brand | ACCRETECH (Tokyo Seimitsu) |
|---|---|
| Origin | Japan |
| Model | PG3000RMX |
| Type | Integrated Backside Grinding & CMP Stress-Relief System for Ultra-Thin Wafer Processing |
| Application | Front-End Wafer Preparation for 15 µm Final Thickness Production |
| Brand | ACCRETECH |
|---|---|
| Origin | Japan |
| Model | SS20 |
| Type | Semi-Automatic Diamond Blade Dicing Saw |
| Cutting Method | Wet/Dry Compatible Blade Dicing |
| Blade Diameter | Standard 6-inch (152 mm) |
| Maximum Wafer Size | 200 mm (8-inch) |
| Z-Axis Travel | ≥30 mm |
| Spindle Speed Range | 1,000–45,000 rpm |
| Coolant System | Integrated Deionized Water Delivery with Filtration |
| Machine Dimensions (W×D×H) | 1,200 × 950 × 1,700 mm |
| Weight | ≈ 1,200 kg |
| Compliance | CE Marked, ISO 9001 Certified Manufacturing Process |
| Control Interface | Touchscreen HMI with Programmable Motion Axes (X/Y/Z/θ) |
| Brand | AdvR |
|---|---|
| Model | PPKTP |
| Substrate Material | KTP (KTiOPO₄) |
| Poling Period Range | 3.5–22 µm (customizable) |
| Operating Wavelength Range | 350–5000 nm |
| Nonlinear Interaction Types | Type-0, Type-I, Type-II phase matching |
| Primary Applications | SHG, SFG, DFG, SPDC |
| Waveguide Configuration | Ti-indiffused or proton-exchanged ridge/strip waveguides |
| Input/Output Options | Fiber-pigtailed (SMF-28, PM fiber), free-space collimated input/output |
| Max. Continuous Pump Power | ≤500 mW (standard), ≤2 W (high-power variant) |
| Conversion Efficiency | Up to 300 %/W (internal, 1560 nm → 780 nm) |
| Operating Temperature Range | 20–80 °C (thermally stabilized options available) |
| Compliance | RoHS-compliant packaging, ISO 9001-certified manufacturing process |
| Customization | Period, length, AR coating (R < 0.2% @ specified λ), polarization handling, thermal tuning design |
| Brand | DAIN HITECH |
|---|---|
| Origin | South Korea |
| Model | DH-OBCP5000 |
| Wafer Compatibility | 6", 8", 12" (flat & notch) |
| OCR Recognition Rate | ≥99.8% |
| Throughput | 90 wafers/hour (12" standard orientation) |
| Printing Method | Thermal Transfer |
| Print Resolution | 305 dpi |
| Max Print Speed | 150 mm/s |
| Label Dimensions | 22–131 mm (W) × 6–356 mm (L) |
| ESD Protection | <100 V (10 s) |
| Acoustic Noise | ≤70 dB(A) |
| UPS Backup Duration | 3 min |
| Safety | Dual emergency stop buttons, magnetic safety sensors on all access doors |
| Software Features | MES integration (T-card scanning), dual-label printing mode, post-print barcode verification, server-based auto-backup, wafer mapping synchronization |
| Brand | Freiberg Instruments |
|---|---|
| Origin | Germany |
| Model | MDPlinescan |
| Sample Type | Monocrystalline & Multicrystalline Silicon Wafers, Ingots, and Processed Substrates |
| Measurement Principle | µ-PCD (Microwave Photoconductance Decay) & Steady-State Photoconductance |
| Carrier Lifetime Range | 0.1 µs – 10 ms (typ.) |
| Resistivity Range | 0.2 – 10³ Ω·cm |
| Conductivity Type | p-type & n-type |
| Sample Dimensions | Up to 50 × 50 mm² |
| Hardware Interface | Ethernet (TCP/IP, Modbus TCP) |
| Power Supply | 24 V DC, 2 A |
| Dimensions | 174 × 107 × 205 mm |
| Weight | 3 kg |
| Compliance | CE, RoHS, IEC 61000-6-2/6-4 |
| Software Protocol | Standard OPC UA & RESTful API support |
| Brand | Hitachi |
|---|---|
| Origin | Japan |
| Model | IM400II / ArBlade 5000 |
| Sample Stage Cooling | Yes (Optional) |
| Vacuum Transfer Capability | Yes (Optional) |
| Dual-Stage Milling Mode | Yes |
| Touchscreen Interface | Yes |
| Maximum Cross-Section Width | 8 mm (±5 mm Traverse Range) |
| Ion Gun Configuration | PLUS Ion Gun (IM400II), PLUS II Ion Gun (ArBlade 5000) |
| Compliance | Designed for SEM/TEM sample preparation per ISO 14644-1 Class 5 cleanroom-compatible operation |
| Brand | Logomatic |
|---|---|
| Origin | Germany |
| Model | Q2/Q2+ |
| Applicable Wafer Sizes | 6" and 8" |
| Max Ingot Length | 60 mm |
| Chuck Center Height | 125 mm |
| Machine Dimensions (L×W×H) | 1.8 m × 1.8 m × 1.9 m |
| Weight | 4.5 ton |
| Power Consumption | 4 kW |
| Spindle Speed | 3500 rpm |
| Integrated X-ray Orientation System | Yes |
| Peel Grinding Technology | Yes |
| Automated Notch & Flat Machining | Yes |
| Optical Notch Profile Inspection | Yes |
| Real-time Acoustic Emission & Force Sensing | Yes |
| Digital Twin Process Simulation | Yes |
| Centrifugal Pure Water Supply System (shared across up to 8 units) | Yes |
| Brand | CSC |
|---|---|
| Origin | Japan |
| Supplier Type | Authorized Distributor |
| Import Status | Imported |
| Model | Not Applicable |
| Pricing | Upon Request |
| Brand | CSC |
|---|---|
| Origin | Japan |
| Model | Magnetic Liquid Seal Type |
| Crystal Growth Capability | Single Crystal |
| Vacuum/Pressure Compatibility | Continuous Operation from High Vacuum to High Pressure |
| Heating System | Four-Mirror Optical Configuration |
| Control Interface | PC-Based Remote Control |
| Power Variants | FZ-T-4000-H (Standard), FZ-T-10000-H (High Power), FZ-T-12000-X (Super High Temperature) |
| Brand | SciDre |
|---|---|
| Origin | Germany |
| Model | HKZ |
| Maximum Melting Zone Temperature | Up to 3000 °C |
| Melting Zone Pressure Range | 10–300 bar (selectable) |
| Vacuum Level | 1×10⁻⁵ mbar |
| Atmosphere Options | Ar, O₂, N₂, air, or custom gas mixtures |
| Xenon Lamp Power Options | 3 kW, 5 kW, 6.5 kW |
| Sample Rod Diameter | 6.8 mm or 9.8 mm |
| Pulling Rate | 0.1–50 mm/h |
| Rotation Speed | 0–70 rpm |
| Brand | SHNTI |
|---|---|
| Origin | Shanghai, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | IMD MPCVD Diamond Growth System |
| Crystal Material | Synthetic Diamond |
| Maximum Crystal Diameter | 2.2 inches (55.9 mm) |
| Typical Crystal Length (Constant-Diameter Zone) | 2–3 cm |
| Process Capability | High-Purity Diamond CVD Deposition, In-situ Thermal Annealing, Homoepitaxial & Heteroepitaxial Growth |
| Brand | Siegert Wafer |
|---|---|
| Origin | Germany |
| Model | Siegert Wafer Series |
| Material Options | Borofloat® 33, Fused Silica |
| Diameter | Up to 200 mm |
| Thickness | 0.5–2.0 mm |
| Shape | Round or Rectangular |
| Surface Coatings | ITO, Photoresist, Custom Thin-Film Layers |
| Compliance | ISO 14644-1 Class 5 Cleanroom Processing |
| Packaging | Vacuum-Sealed, Particle-Free Cassette |
| Brand | SUHWOO |
|---|---|
| Origin | South Korea |
| Model | Suhwoo STRIP GRINDER SG-2000X |
| Strip Width Range | 62–95 mm |
| Strip Length Capacity | up to 259 mm |
| Height Detection Repeatability | ±3 µm |
| Tool Change Time | <30 minutes |
| Spindle Type | Custom High-Precision Air-Bearing Spindle |
| Cleaning & Drying | Integrated Automated Rinse and Spin-Dry Module |
| Compliance | Designed for ISO 14644-1 Class 5 Cleanroom Integration |
| Control Interface | Touchscreen HMI with Recipe Management and Audit Trail Logging |
| Brand | SUNJUNE |
|---|---|
| Model | VS-Q Series |
| Origin | Guangdong, China |
| Manufacturer | SUNJUNE Technology Co., Ltd. |
| Construction | Stainless Steel Monolithic Enclosure |
| Vacuum Performance | ≤5 Pa (Mechanical Pump Only) / ≤1×10⁻⁵ Pa (MPU-90i Molecular Pump Unit) |
| Ultimate Vacuum (MPU-90i) | ≤1×10⁻⁶ Pa |
| Quartz Tube Dimensions Supported | OD 5–50 mm, Length 80–1500 mm |
| Rotation Speed | Adjustable |
| Vacuum Pumping Rate | Adjustable |
| Protective Gas Inlet Flow | Adjustable |
| Crystal Growth Capability | Black Phosphorus Crystals |
| Single-Crystal Growth Duration per Cycle | 12 h |
| Silicon Single-Crystal Constant-Diameter Length | 6 mm |
| Grown Crystal Diameter Range | 2–5 mm |
| Compliance | ASTM E29, ISO/IEC 17025 (for lab process validation), GLP-compliant operation mode supported |
| Control Interface | Touchscreen with IL Intelligent Logic Control Software |
| Operating Modes | Manual (independent mechanical pump control) & Automatic (interlocked mechanical + molecular pump sequencing) |
| Brand | SUNJUNE |
|---|---|
| Origin | Guangdong, China |
| Manufacturer | SUNJUNE Technology Co., Ltd. |
| Model | VS-Q1 |
| Crystal Type | Single Crystal |
| Max. Crystal Diameter | 2–5 mm |
| Isometric Growth Length (Si) | 6 mm |
| Typical Growth Cycle per Run | 10 h |
| Quartz Tube OD Range | 5–50 mm |
| Quartz Tube Length Range | 80–1500 mm |
| Base Pressure (Mechanical Pump) | < 5 Pa |
| Base Pressure (MPU-90i Molecular Pump Unit) | < 1×10⁻⁵ Pa |
| Ultimate Vacuum (MPU-90i w/ Full-Range Gauge) | ≤ 1×10⁻⁶ Pa |
| Rotational Speed | Adjustable |
| Vacuum Pumping Rate | Adjustable |
| Backfill Gas Flow | Adjustable |
| Compliance | CE-marked components, GLP-aligned operational logging capability |
| Brand | SUNJUNE |
|---|---|
| Origin | Guangdong, China |
| Manufacturer Type | Direct Manufacturer |
| Country of Origin | China |
| Model | VS-Q2 |
| Crystal Growth Capability | Single Crystal |
| Typical Growth Cycle per Run | 12 h |
| Diameter Control Precision (for Si single crystal) | ±0.05 mm over 6 mm isometric section |
| Usable Crystal Diameter Range | 2–5 mm |
| Quartz Tube Compatibility | OD 5–50 mm, Length 80–1500 mm |
| Base Vacuum (Mechanical Pump Only) | <5 Pa |
| Ultimate Vacuum (MPU-90i Molecular Pump Unit) | ≤1×10⁻⁶ Pa |
| Rotational Speed Control | Adjustable (0–30 rpm) |
| Vacuum Pumping Rate | Adjustable |
| Backfill Gas Flow Control | Programmable |
| Control Interface | Touchscreen with IL Intelligent Logic (IL) software |
| Operating Modes | Manual (independent pump control) & Auto (interlocked mechanical + molecular pump sequencing) |
| Compliance | Designed for GLP-compliant lab environments |
| Brand | Techno Search Corp |
|---|---|
| Origin | Japan |
| Model | TCA4-6 |
| Maximum Operating Temperature | 2000–3000 °C |
| Chamber Vacuum Level | ≤1×10⁻⁶ Torr (≤1.3×10⁻⁴ Pa) |
| Atmosphere Control | High-purity Ar, pressure range 10⁻⁴ Pa to 1 atm |
| Crucible Rotation Speed | 1–10 rpm (manual) |
| Crystal Pulling Speed | 3–38 mm/hr |
| Pulling Stroke | 150 mm |
| Electrode Configuration | 4 arc-melting electrodes + 1 getter electrode |
| Sustained Arc Current | up to 75 A (adjustable) |
| Peak Arc Current | up to 150 A (short-term, adjustable) |
| Crucible Material | Water-cooled copper |
| Chamber Material | Stainless steel |
| Real-time Visual Monitoring | Integrated high-temperature CCD camera with viewport |
| Brand | SUSS MicroTec |
|---|---|
| Origin | Germany |
| Model | XBS200 |
| Maximum Wafer Size | 200 mm |
| Bonding Force | up to 100 kN |
| Temperature Range | up to 550 °C |
| Vacuum Chamber Pressure Range | 5×10⁻⁵ mbar to 3 bar |
| Heating/Cooling Rate | up to 40 K/min (heating), up to 30 K/min (cooling) |
| Bonding Force Repeatability | < 2% |
| Temperature Uniformity | < 1% |
| Process Control | Programmable ramp/soak profiles with independent pressure, temperature, and force regulation |