Wet Cleaning Equipment
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| Brand | ADT |
|---|---|
| Model | WCS-977 |
| Type | Wet Process Wafer Cleaning Equipment |
| Chamber Capacity | 6-inch and 8-inch wafers |
| Dimensions (W×D×H) | 410 × 625 × 980 mm |
| Power Supply | 230 VAC, 50 Hz, 5 A |
| CDA Pressure | 0.5–0.6 MPa |
| CDA Consumption | ≤3 m³/h |
| DI Water Pressure | 0.2–0.3 MPa |
| DI Water Consumption | ≤100 L/h |
| Rotation Speed Range | 500–3000 rpm |
| Vacuum Source | Integrated vacuum generator |
| CO₂ Injection | Membrane contactor-based ultra-pure CO₂ dissolution into DI water |
| Control System | Programmable Logic Controller (PLC) with recipe storage and real-time process monitoring |
| Safety | Interlocked access door, status indicator lights, emergency stop circuit |
| Construction | Internal 316L stainless steel chamber, exterior powder-coated steel housing |
| Compliance | Designed for Class 100 cleanroom integration, compatible with SEMI S2/S8 safety guidelines |
| Brand | EVG (EV Group) |
|---|---|
| Origin | Austria |
| Equipment Type | Single-Wafer Wet Cleaning System |
| Wafer Diameter Support | 4–12 inch |
| Cleaning Method | Wet Chemical + DI Water Rinse + Optional Megasonics (1 MHz) / Brush / Diluted Chemistry |
| Throughput | 150 wafers/hour |
| Footprint | 2400 × 4720 × 2555 mm (W × L × H) |
| Process Compatibility | Co-D2W (Compound Die-to-Wafer) Bonding, Hybrid & Fusion Bonding Integration |
| Automation Interface | FOUP-to-FOUP and Cassette-to-Cassette |
| Edge & Backside Treatment | Optional |
| Cross-Contamination Control | Front-to-Back Isolation Architecture |
| Remote Diagnostics | Integrated Ethernet-based Service Protocol |
| Software Control | Fully Programmable Recipe Management with Audit Trail Logging |
| Brand | Kingsemi |
|---|---|
| Model | KS-CF300/200-8SR |
| Origin | Liaoning, China |
| Equipment Type | Semiconductor Wet Cleaning System |
| Configuration | Dual-Stage Rotational Scrubbing with Edge & Backside Processing Capability |
| Control Interface | Customizable HMI with Digital Parameter Display & Industrial PC Data Logging |
| Compliance | Designed for ISO Class 1–5 cleanroom integration |
| Automation Interface | SECS/GEM compliant (optional) |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Models | SCS112 / SCSe124 / SCSe126 |
| Cleaning Method | Wet Chemical & DI Water-Based Cleaning |
| Equipment Type | Single-Wafer Manual Processing Station |
| Maximum Substrate Diameter | 8 in (SCS112) or 10 in (SCSe124/SCSe126) |
| System Dimensions (W×D×H) | 26 in × 21 in × 40 in |
| Spindle Speed | Up to 2500 rpm |
| Control Architecture | Microprocessor-Based with Touchscreen GUI (SCSe124/SCSe126) or Keypad Interface (SCS112) |
| Preset Recipes | 3 (SCS112) or 10 (SCSe124/SCSe126) |
| Mechanical Arms | 1 (SCS112), 2 (SCSe124), or 4 (SCSe126) |
| Chamber Material | Chemically Resistant Polypropylene |
| Exhaust Configuration | Radial Laminar Flow Chamber (SCSe124/SCSe126) |
| Drying Options | High-velocity N₂ purge, IR heating lamp, or heated DI water rinse |
| Safety Features | Interlocked lid, positive-pressure chamber cover, emergency stop circuitry |
| Power Supply | 220 VAC, 10 A, 50/60 Hz |
| Brand | TSD |
|---|---|
| Origin | Beijing, China |
| Model Series | TSC-100 / TSC-300S / TSC-200L |
| Configuration Types | Single-Station / Indexing / Inline (Cassette-to-Cassette) |
| Wafer Compatibility | 4–12 inch (TSC-300S), 4–6 inch (TSC-100), 6–8 inch (TSC-200L) |
| Cleaning Modules | DI Water Pre-Rinse, Dual-Side PVA Brush Scrubbing, Optional Megasonics, N₂ Dry Blow-Off, High-Speed Spin Dry |
| Control System | PLC with HMI Touchscreen Interface |
| Automation Level | Manual Loading (TSC-100/TSC-300S), Fully Automated Dual-Arm Robotic Handler (TSC-200L) |
| Footprint | Compact Design Optimized for Cleanroom Space Efficiency |
| Output State | Wet-in, Dry-out Process Flow |
| Brand | Zhipure |
|---|---|
| Model | Customized-2 |
| Equipment Type | Batch Wet Processing System |
| Wafer Diameter | 100 mm – 300 mm |
| Cleaning Method | Liquid-phase Chemical Processing |
| Core Process Controls | Temperature Control, Chemical Concentration Control, Flow Rate Control, Pressure Control |
| Supported Processes | RCA Standard Clean, Photoresist Strip (Wet), Dielectric Layer Wet Etch (e.g., SiO₂, Si₃N₄), Metal Layer Wet Etch (e.g., Al, Ti, Cu), Pre-furnace Cleaning |
| Etch Uniformity | ≤4% intra-wafer, ≤4% inter-wafer, ≤4% batch-to-batch |
| Particle Additivity | <30 particles @ 0.09 µm (tested on thermally grown SiO₂ film |
| Metallic Contamination | <5 × 10⁹ atoms/cm² |
| Safety & Automation | Over-temperature protection per tank, leak detection sensors per process module, chemical recovery capability, Marangoni drying or spin-dry integration, automated acid replacement, auto-replenishment and formulation, SECS/GEM compliance |