Wet Etching Equipment
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| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Type | Electrostatic Chuck (E-chuck) |
| Application | Wafer-level and Die-level Fixturing in Wet Etching & MEMS Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Control Interface | Analog voltage input (0–10 V) or digital RS-485 |
| Holding Force Range | Adjustable up to 0.1–0.8 N/cm² depending on die size and surface condition |
| Substrate Compatibility | Si, SiO₂, SiN, SOI, GaAs, quartz, and patterned MEMS wafers |
| Operating Temperature | Ambient to 80 °C |
| Vacuum Requirement | Optional backside helium cooling interface (compatible with standard wafer chucks) |
| Material | Al₂O₃ ceramic base with embedded bipolar or monopolar electrode architecture |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | VPE (HF Vapor Phase Etcher) |
| Price Range | USD 68,000 – 136,000 |
| Brand | NAURA |
|---|---|
| Origin | Beijing, China |
| Model | GSE C200 |
| Wafer Size Capacity | ≤8-inch |
| Plasma Source Type | High-Density Inductively Coupled Plasma (ICP) |
| Etch Uniformity | <±3% (1σ, across 200 mm wafer) |
| Material Compatibility | Si, SiO₂, Si₃N₄, GaN, GaAs, InP, LiNbO₃, Nb, PI, metals, organics |
| Application Scope | R&D, failure analysis, pilot-line process development |
| Compliance | Designed to meet SEMI S2/S8 safety guidelines |
| Software | Integrated recipe management with audit trail logging (21 CFR Part 11–ready configuration available) |
| Brand | Oxford Instruments |
|---|---|
| Model | Plasmalab 133 |
| Maximum Wafer Size | 300 mm (330 mm chuck) |
| RF Power | 600 W, 13.56 MHz |
| Electrode Temperature Control | 10 °C – 80 °C (water-cooled) |
| Endpoint Detection | Verity Optical Emission Spectroscopy (OES), 200–800 nm |
| Gas Delivery | 8-line manifold with 7 Mass Flow Controllers (MFCs): Ar (100 sccm), Cl₂ (100 sccm), BCl₃ (100 sccm), N₂O (200 sccm), CHF₃ (200 sccm), NH₃ (100 sccm), CH₄ (50 sccm) |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-350iPC |
| Maximum Wafer Diameter | Ø350 mm |
| ICP Source Technology | HSTC™ (Hyper Symmetrical Tornado Coil) |
| Vacuum Pumping | Turbo Molecular Pump (TMP) with Symmetrical Exhaust Design |
| Gas Delivery | Optimized Multi-Channel Manifold |
| Endpoint Detection | Optional Optical Interferometric Monitoring System |
| Application Scope | GaN, GaAs, InP, SiC, SiN, SiO₂, Dielectrics, Metals, PSS Fabrication |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-800BCT |
| Type | Production-Grade Deep Silicon Etching System |
| Discharge Mode | Inductively Coupled Plasma (ICP) |
| Etch Aspect Ratio | >100 |
| Process Capability | High-Rate, High-Selectivity DRIE |
| Application Focus | MEMS, TSV, Power Devices, SOI Wafer Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Control Architecture | Fully automated recipe-driven operation with real-time RF/power monitoring |
| Brand | SENTECH (Germany) |
|---|---|
| Origin | Germany |
| Model | Etchlab 200 |
| RF Power | 600 W @ 13.56 MHz |
| Vacuum System | 360 L/s Turbo-Molecular Pump + Rotary Vane Backing Pump |
| Wafer Capacity | Up to 200 mm (8-inch) |
| Gas Inlets | 2–12 Configurable Lines |
| Chamber Access | Top-Opening Lid Design |
| Footprint | Compact Benchtop Layout |
| Optional Add-ons | Residual Gas Analyzer (RGA), Optical Emission Spectroscopy (OES), Sample Temperature Control (SLI), High-Vacuum Pressure Monitoring (TP) |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SENTTECH Cluster System |
| Price | Upon Request |