Wet Process Equipment
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| Brand | ADT |
|---|---|
| Model | WCS-977 |
| Type | Wet Process Wafer Cleaning Equipment |
| Chamber Capacity | 6-inch and 8-inch wafers |
| Dimensions (W×D×H) | 410 × 625 × 980 mm |
| Power Supply | 230 VAC, 50 Hz, 5 A |
| CDA Pressure | 0.5–0.6 MPa |
| CDA Consumption | ≤3 m³/h |
| DI Water Pressure | 0.2–0.3 MPa |
| DI Water Consumption | ≤100 L/h |
| Rotation Speed Range | 500–3000 rpm |
| Vacuum Source | Integrated vacuum generator |
| CO₂ Injection | Membrane contactor-based ultra-pure CO₂ dissolution into DI water |
| Control System | Programmable Logic Controller (PLC) with recipe storage and real-time process monitoring |
| Safety | Interlocked access door, status indicator lights, emergency stop circuit |
| Construction | Internal 316L stainless steel chamber, exterior powder-coated steel housing |
| Compliance | Designed for Class 100 cleanroom integration, compatible with SEMI S2/S8 safety guidelines |
| Brand | CTS |
|---|---|
| Origin | South Korea |
| Model | AP200 |
| Wafer Size Compatibility | 4", 6", 8" |
| Platen Count | 1 |
| Platen Speed | 0–200 rpm |
| Polishing Head Speed | 0–200 rpm |
| Polishing Head Oscillation Range | ±15 mm |
| Pressure Control Zones | 3 (Center, Edge, Retaining Ring) |
| Pressure Range | 0.14–14 psi |
| Platen Diameter | 20 in |
| Slurry Flow Rate | 20–500 cc/min (via dual peristaltic pumps) |
| Conditioning Head | 10-zone segmented actuation |
| Conditioning Sweep Speed | 10 sweeps/min |
| Conditioning Downforce | 3–20 lbs |
| Conditioning Speed | 0–150 rpm |
| Within-Wafer Non-Uniformity (WIWNU, 5-mm edge exclusion) | <5% (1σ) |
| Wafer-to-Wafer Non-Uniformity (WTWNU, 5-mm edge exclusion) | <3% (1σ) |
| Dimensions (W×L×H) | 1000 × 2030 × 2100 mm |
| Brand | EVG (EV Group) |
|---|---|
| Origin | Austria |
| Equipment Type | Single-Wafer Wet Cleaning System |
| Wafer Diameter Support | 4–12 inch |
| Cleaning Method | Wet Chemical + DI Water Rinse + Optional Megasonics (1 MHz) / Brush / Diluted Chemistry |
| Throughput | 150 wafers/hour |
| Footprint | 2400 × 4720 × 2555 mm (W × L × H) |
| Process Compatibility | Co-D2W (Compound Die-to-Wafer) Bonding, Hybrid & Fusion Bonding Integration |
| Automation Interface | FOUP-to-FOUP and Cassette-to-Cassette |
| Edge & Backside Treatment | Optional |
| Cross-Contamination Control | Front-to-Back Isolation Architecture |
| Remote Diagnostics | Integrated Ethernet-based Service Protocol |
| Software Control | Fully Programmable Recipe Management with Audit Trail Logging |
| Brand | G&P |
|---|---|
| Origin | South Korea |
| Model | GNP POLI-762 / POLI-500 / POLI-400L |
| Platen Diameter | Φ762 mm (30″), Φ508 mm (20″), Φ406 mm (16″) |
| Platen Material | Anodized Aluminum (optional Teflon-coated) |
| Head & Table Rotation Speed | 30–200 rpm |
| Head Oscillation | ±15 mm |
| Downforce Range | 70–500 g/cm² (1–7.1 psi) |
| System Height | 1850–1960 mm |
| Process Mode | Automated Dry/Wet Sequential Operation |
| Wafer Compatibility | Up to 300 mm (12″), 200 mm (8″), or 150 mm (6″) |
| Compliance | Designed for GLP/GMP-aligned R&D and process qualification environments |
| Brand | Kingsemi |
|---|---|
| Model | KS-CF300/200-8SR |
| Origin | Liaoning, China |
| Equipment Type | Semiconductor Wet Cleaning System |
| Configuration | Dual-Stage Rotational Scrubbing with Edge & Backside Processing Capability |
| Control Interface | Customizable HMI with Digital Parameter Display & Industrial PC Data Logging |
| Compliance | Designed for ISO Class 1–5 cleanroom integration |
| Automation Interface | SECS/GEM compliant (optional) |
| Brand | MCF |
|---|---|
| Origin | Germany |
| Model | customized-17 |
| Platen Diameter | ≥508 mm (20 inch) |
| Platen Speed | 30–200 rpm |
| Wafer Pressure Range | 70–500 g/cm² |
| Retaining Ring Pressure Range | 70–700 g/cm² |
| Carrier Head Speed | 30–200 rpm |
| Oscillation Amplitude | ±10 mm |
| Slurry Delivery | 3-channel peristaltic pump system with adjustable flow and positionable nozzles |
| Endpoint Detection | Integrated friction force & infrared surface temperature monitoring |
| Control System | PC-based industrial controller with touchscreen HMI, 20 programmable recipes, up to 6 process stages per recipe |
| Within-Wafer Non-Uniformity (WIWNU, 1σ, EE=5 mm) | ≤5% |
| Wafer-to-Wafer Non-Uniformity (WTWNU) | ≤5% |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Type | Electrostatic Chuck (E-chuck) |
| Application | Wafer-level and Die-level Fixturing in Wet Etching & MEMS Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom environments |
| Control Interface | Analog voltage input (0–10 V) or digital RS-485 |
| Holding Force Range | Adjustable up to 0.1–0.8 N/cm² depending on die size and surface condition |
| Substrate Compatibility | Si, SiO₂, SiN, SOI, GaAs, quartz, and patterned MEMS wafers |
| Operating Temperature | Ambient to 80 °C |
| Vacuum Requirement | Optional backside helium cooling interface (compatible with standard wafer chucks) |
| Material | Al₂O₃ ceramic base with embedded bipolar or monopolar electrode architecture |
| Brand | Midas |
|---|---|
| Origin | Switzerland |
| Manufacturer Type | Authorized Distributor |
| Product Origin | Imported |
| Model | VPE (HF Vapor Phase Etcher) |
| Price Range | USD 68,000 – 136,000 |
| Brand | LabTech |
|---|---|
| Origin | Beijing, China |
| Manufacturer Type | Direct Manufacturer |
| Product Origin | Domestic (China) |
| Model | MidiLab9000-CSI |
| Pricing | Upon Request |
| Brand | NAURA |
|---|---|
| Origin | Beijing, China |
| Model | GSE C200 |
| Wafer Size Capacity | ≤8-inch |
| Plasma Source Type | High-Density Inductively Coupled Plasma (ICP) |
| Etch Uniformity | <±3% (1σ, across 200 mm wafer) |
| Material Compatibility | Si, SiO₂, Si₃N₄, GaN, GaAs, InP, LiNbO₃, Nb, PI, metals, organics |
| Application Scope | R&D, failure analysis, pilot-line process development |
| Compliance | Designed to meet SEMI S2/S8 safety guidelines |
| Software | Integrated recipe management with audit trail logging (21 CFR Part 11–ready configuration available) |
| Brand | Oxford Instruments |
|---|---|
| Model | Plasmalab 133 |
| Maximum Wafer Size | 300 mm (330 mm chuck) |
| RF Power | 600 W, 13.56 MHz |
| Electrode Temperature Control | 10 °C – 80 °C (water-cooled) |
| Endpoint Detection | Verity Optical Emission Spectroscopy (OES), 200–800 nm |
| Gas Delivery | 8-line manifold with 7 Mass Flow Controllers (MFCs): Ar (100 sccm), Cl₂ (100 sccm), BCl₃ (100 sccm), N₂O (200 sccm), CHF₃ (200 sccm), NH₃ (100 sccm), CH₄ (50 sccm) |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-350iPC |
| Maximum Wafer Diameter | Ø350 mm |
| ICP Source Technology | HSTC™ (Hyper Symmetrical Tornado Coil) |
| Vacuum Pumping | Turbo Molecular Pump (TMP) with Symmetrical Exhaust Design |
| Gas Delivery | Optimized Multi-Channel Manifold |
| Endpoint Detection | Optional Optical Interferometric Monitoring System |
| Application Scope | GaN, GaAs, InP, SiC, SiN, SiO₂, Dielectrics, Metals, PSS Fabrication |
| Brand | SAMCO |
|---|---|
| Origin | Japan |
| Model | RIE-800BCT |
| Type | Production-Grade Deep Silicon Etching System |
| Discharge Mode | Inductively Coupled Plasma (ICP) |
| Etch Aspect Ratio | >100 |
| Process Capability | High-Rate, High-Selectivity DRIE |
| Application Focus | MEMS, TSV, Power Devices, SOI Wafer Processing |
| Compliance | Designed for ISO Class 5–7 cleanroom integration |
| Control Architecture | Fully automated recipe-driven operation with real-time RF/power monitoring |
| Origin | USA |
|---|---|
| Manufacturer Type | Authorized Distributor |
| Import Status | Imported |
| Models | SCS112 / SCSe124 / SCSe126 |
| Cleaning Method | Wet Chemical & DI Water-Based Cleaning |
| Equipment Type | Single-Wafer Manual Processing Station |
| Maximum Substrate Diameter | 8 in (SCS112) or 10 in (SCSe124/SCSe126) |
| System Dimensions (W×D×H) | 26 in × 21 in × 40 in |
| Spindle Speed | Up to 2500 rpm |
| Control Architecture | Microprocessor-Based with Touchscreen GUI (SCSe124/SCSe126) or Keypad Interface (SCS112) |
| Preset Recipes | 3 (SCS112) or 10 (SCSe124/SCSe126) |
| Mechanical Arms | 1 (SCS112), 2 (SCSe124), or 4 (SCSe126) |
| Chamber Material | Chemically Resistant Polypropylene |
| Exhaust Configuration | Radial Laminar Flow Chamber (SCSe124/SCSe126) |
| Drying Options | High-velocity N₂ purge, IR heating lamp, or heated DI water rinse |
| Safety Features | Interlocked lid, positive-pressure chamber cover, emergency stop circuitry |
| Power Supply | 220 VAC, 10 A, 50/60 Hz |
| Brand | SENTECH (Germany) |
|---|---|
| Origin | Germany |
| Model | Etchlab 200 |
| RF Power | 600 W @ 13.56 MHz |
| Vacuum System | 360 L/s Turbo-Molecular Pump + Rotary Vane Backing Pump |
| Wafer Capacity | Up to 200 mm (8-inch) |
| Gas Inlets | 2–12 Configurable Lines |
| Chamber Access | Top-Opening Lid Design |
| Footprint | Compact Benchtop Layout |
| Optional Add-ons | Residual Gas Analyzer (RGA), Optical Emission Spectroscopy (OES), Sample Temperature Control (SLI), High-Vacuum Pressure Monitoring (TP) |
| Brand | SENTECH |
|---|---|
| Origin | Germany |
| Manufacturer Type | Authorized Distributor |
| Origin Category | Imported |
| Model | SENTTECH Cluster System |
| Price | Upon Request |
| Brand | TSD |
|---|---|
| Origin | Beijing, China |
| Model | POLI-500 |
| Maximum Wafer Size | 200 mm (8-inch) |
| Platen Diameter | 508 mm (20 inch) |
| Platen Speed | 30–200 rpm |
| Carrier Head Speed | 30–200 rpm |
| Downforce Range | 70–500 g/cm² |
| Pressure Actuation | Pneumatic bladder-based compliant loading |
| Conditioning | Oscillating arm-type conditioner with optional reciprocating mode |
| Process Monitoring | Optional friction force & temperature sensing |
| Endpoint Detection | Optional Electrochemical Endpoint Detection (EPD) |
| Slurry Delivery | Three independent peristaltic pump channels |
| Loading Interface | Semi-automatic tray-based wafer handling |
| Brand | TSD |
|---|---|
| Origin | Beijing, China |
| Model | TMP-150A / TMP-200A |
| Wafer Size | 4"/6" (TMP-150A), 4"/6"/8" (TMP-200A) |
| Platen Diameter | 406 mm (TMP-150A), 508 mm (TMP-200A) |
| Platen & Carrier Rotation Speed | 0–120 rpm |
| Wafer Backside Pneumatic Pressure | 70–500 g/cm² |
| Retaining Ring Pressure | 70–700 g/cm² |
| Conditioner Type | Swing-Arm Diamond Dresser |
| Conditioner Speed | 0–80 rpm |
| Loading Mode | Semi-Automatic |
| Brand | TSD |
|---|---|
| Origin | Beijing, China |
| Model | TMP-200S / TMP-300S |
| Wafer Size | 6–8 inch (TMP-200S), 8–12 inch (TMP-300S) |
| Platen Speed | 30–200 rpm |
| Carrier Head Speed | 30–200 rpm |
| Wafer Backside Pneumatic Pressure | 0–700 g/cm² |
| Zone-Based Pressure Control | 3-zone (TMP-200S), 3/6-zone (TMP-300S) |
| Retainer Ring Pressure | 0–700 g/cm² |
| Loading/Unloading | Semi-automatic dual-tray (load/unload trays) |
| Conditioning | Swing-arm diamond dresser |
| Brand | TSD |
|---|---|
| Origin | Beijing, China |
| Model Series | TSC-100 / TSC-300S / TSC-200L |
| Configuration Types | Single-Station / Indexing / Inline (Cassette-to-Cassette) |
| Wafer Compatibility | 4–12 inch (TSC-300S), 4–6 inch (TSC-100), 6–8 inch (TSC-200L) |
| Cleaning Modules | DI Water Pre-Rinse, Dual-Side PVA Brush Scrubbing, Optional Megasonics, N₂ Dry Blow-Off, High-Speed Spin Dry |
| Control System | PLC with HMI Touchscreen Interface |
| Automation Level | Manual Loading (TSC-100/TSC-300S), Fully Automated Dual-Arm Robotic Handler (TSC-200L) |
| Footprint | Compact Design Optimized for Cleanroom Space Efficiency |
| Output State | Wet-in, Dry-out Process Flow |
| Brand | ULVAC KIKO |
|---|---|
| Origin | Japan |
| Model | CS-200Z |
| Configuration | Load-lock type, high-vacuum DC/RF magnetron sputtering system |
| Substrate Compatibility | Ti trays for Φ2″–Φ4″ wafers (max. Φ320 mm) and custom-shaped substrates (e.g., 50×50 mm²) |
| Control System | ULVAC GPCS-2700 integrated PLC + PC-based HMI (English interface) |
| Data Logging | Real-time parameter logging to PC with Excel export capability |
| Footprint | 1500 × 4500 mm (including service clearance) |
| Environment | Designed for Class 100–Class 1000 cleanroom integration |
| Brand | ZhiCheng |
|---|---|
| Origin | Imported |
| Manufacturer Type | Authorized Distributor |
| Model | Customized-3 |
| Wafer Size | 150 mm – 300 mm |
| Uniformity Performance | Within-Wafer (WiW) ≤ 5%, Within-Lot (WtW) ≤ 5%, Run-to-Run (RtR) ≤ 5% |
| Configuration | Up to 3 Loadports, Up to 24 Plating Chambers (Cu, Ni, Sn/Ag, Au), Up to 4 Pre-wet Chambers, Up to 4 Rinse Chambers |
| Chamber Architecture | Horizontal, Cross-Contamination-Free |
| Maintenance Design | Modular |
| Sealing Technology | Elastomeric Gasket Sealing |
| Electrode Isolation | Anode-Cathode Separation for Electrolyte Stability |
| Brand | Zhipure |
|---|---|
| Model | Customized-2 |
| Equipment Type | Batch Wet Processing System |
| Wafer Diameter | 100 mm – 300 mm |
| Cleaning Method | Liquid-phase Chemical Processing |
| Core Process Controls | Temperature Control, Chemical Concentration Control, Flow Rate Control, Pressure Control |
| Supported Processes | RCA Standard Clean, Photoresist Strip (Wet), Dielectric Layer Wet Etch (e.g., SiO₂, Si₃N₄), Metal Layer Wet Etch (e.g., Al, Ti, Cu), Pre-furnace Cleaning |
| Etch Uniformity | ≤4% intra-wafer, ≤4% inter-wafer, ≤4% batch-to-batch |
| Particle Additivity | <30 particles @ 0.09 µm (tested on thermally grown SiO₂ film |
| Metallic Contamination | <5 × 10⁹ atoms/cm² |
| Safety & Automation | Over-temperature protection per tank, leak detection sensors per process module, chemical recovery capability, Marangoni drying or spin-dry integration, automated acid replacement, auto-replenishment and formulation, SECS/GEM compliance |