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| Brand | Qiyue Technology |
|---|---|
| Origin | Zhejiang, China |
| Manufacturer Type | Authorized Distributor |
| Country of Origin | China |
| Model | MINI-ALD4 |
| Substrate Size | Up to 100 mm (4-inch) wafers |
| Chamber Architecture | Dual-chamber (reaction + load-lock) |
| Heating System | Radiant heating with high temperature uniformity |
| Gas Delivery | Optimized laminar flow path with precursor bottle heating, heated transfer lines, and adjustable pulsing sequence |
| Optional Modules | Plasma source, powder ALD module, ozone generator |
| Film Compatibility | Metal oxides (e.g., Al₂O₃, HfO₂, TiO₂), nitrides (e.g., TiN, TaN), pure metals (e.g., Pt, Ru), and doped compounds |
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