Annealsys JetFirst 300 12-inch High-Vacuum Rapid Thermal Annealing Furnace
| Brand | Annealsys |
|---|---|
| Origin | Germany |
| Model | JetFirst 300 |
| Sample Size | 12-inch (300 mm) wafers |
| Temperature Range | 0–1200 °C |
| Max. Ramp Rate | 150 °C/s |
| Max. Cool-down Rate | 200 °C/min (from 1000 °C to 400 °C) |
| Temperature Accuracy | < ±1% of setpoint |
| Temperature Uniformity | < ±1% across wafer surface |
| Vacuum Level | ≤ 1 × 10⁻⁶ hPa (high-vacuum configuration) |
| Heating Source | Dual-zone halogen lamp array (top + bottom) |
| Gas Control | Up to 4 MFC-controlled process lines (N₂, Ar, O₂, H₂/N₂ mix) |
| Cooling | Water-cooled chamber + N₂ backside purge |
| Control System | SIMATIC S7-based PLC with 7-inch HMI touchscreen |
| Programmable Recipes | 50 stored profiles, up to 50 segments per recipe |
Overview
The Annealsys JetFirst 300 is a high-precision, high-vacuum rapid thermal annealing (RTA) furnace engineered for semiconductor process development and advanced materials research. Utilizing symmetric dual-zone infrared halogen lamp heating, the system delivers exceptional thermal control over 300 mm (12-inch) silicon or compound semiconductor wafers. Its core architecture adheres to the physical principles of radiative heat transfer under controlled vacuum or reactive gas environments—enabling precise, transient thermal cycles essential for dopant activation, silicide formation, oxide/nitride growth, and low-k dielectric stabilization. Designed for laboratory-scale R&D and pilot-line integration, the JetFirst 300 operates within a rigorously sealed stainless-steel chamber capable of sustaining pressures down to 1 × 10⁻⁶ hPa, minimizing contamination and enabling reproducible surface-sensitive reactions.
Key Features
- Dual-zone IR heating system with independent top/bottom lamp arrays ensures radial and axial thermal symmetry across full 300 mm wafers
- Ultra-fast thermal response: programmable ramp rates up to 150 °C/s and controlled cool-down at 200 °C/min (1000 °C → 400 °C), critical for minimizing dopant diffusion during ion implant activation
- High-accuracy temperature regulation: real-time pyrometric feedback with closed-loop control maintains setpoint deviation below ±1% and spatial uniformity better than ±1% across the wafer plane
- Multi-gas process capability via four mass flow controllers (MFCs), supporting inert (N₂, Ar), oxidizing (O₂), reducing (H₂/N₂), and forming gas chemistries under vacuum or low-pressure conditions
- Integrated water-cooled chamber housing and nitrogen backside purge ensure thermal stability, mechanical integrity, and repeatable substrate cooling kinetics
- SIMATIC S7-1200 PLC platform with intuitive 7-inch HMI touchscreen interface; supports up to 50 user-defined recipes, each configurable with up to 50 time-temperature-gas-vacuum segments
- Compact benchtop footprint (505 × 504 × 420 mm) and modular design facilitate cleanroom integration and space-constrained lab deployment
Sample Compatibility & Compliance
The JetFirst 300 accommodates standard 300 mm semiconductor wafers—including Si, SiC, GaN, Ge, SOI, and glass substrates—with optional edge exclusion and notch/flat detection support. It complies with ISO 14644-1 Class 5 cleanroom compatibility requirements when operated with appropriate exhaust filtration. The system meets electromagnetic compatibility (EMC) standards per EN 61326-1 and safety requirements per EN 61010-1. Vacuum components conform to ASTM F2299 for ultra-high-purity metallic sealing integrity. All gas lines are VCR-fitted and certified for Class 1 cleanliness per SEMI F57. For regulated environments, the control architecture supports audit-trail logging and user-access-level management compatible with GLP/GMP documentation workflows.
Software & Data Management
Process data—including temperature profiles, gas flow rates, vacuum pressure, lamp power output, and alarm logs—are timestamped and stored locally on an industrial-grade SD card. Export formats include CSV and XML for post-processing in MATLAB, Python, or JMP. Optional Ethernet/IP or OPC UA connectivity enables integration into factory MES systems. Recipe management includes version control, digital signature fields, and change history tracking. All system events are logged with ISO 8601 timestamps, satisfying traceability requirements aligned with FDA 21 CFR Part 11 for electronic records and signatures where applicable.
Applications
- Ion implant activation annealing for sub-28 nm node CMOS fabrication
- Rapid thermal oxidation (RTO) and nitridation (RTN) of gate dielectrics
- Salicide (NiSi, CoSi₂) and contact metallization annealing
- Low-k (e.g., SiCOH) film densification and porogen removal
- Polycrystalline silicon and metal oxide semiconductor (e.g., IGZO) crystallization
- Heterojunction bonding for photovoltaic and MEMS applications
- Thermal budget optimization studies for 3D NAND and DRAM stack processing
FAQ
What vacuum level does the JetFirst 300 achieve in high-vacuum mode?
The system reaches ≤ 1 × 10⁻⁶ hPa using a turbomolecular pump backed by a dry scroll pump, verified with calibrated cold cathode gauges.
Can the furnace operate under atmospheric pressure with reactive gases?
Yes—it supports both vacuum and controlled-atmosphere modes, with MFC-regulated gas delivery up to 1 bar absolute pressure and integrated pressure relief and leak detection.
Is remote monitoring or automation integration supported?
Standard Ethernet port enables Modbus TCP and optional OPC UA server implementation for SCADA or SECS/GEM communication in automated fabs.
How is temperature uniformity validated across the wafer?
Uniformity is characterized using multi-point thermocouple mapping and emissivity-corrected pyrometry during factory acceptance testing; calibration certificates are provided per IEC 62040-3.
Does the system comply with semiconductor industry safety standards?
Yes—the enclosure meets SEMI S2-0215 safety guidelines, including interlocked access doors, emergency stop circuitry, and radiant heat shielding per IEC 60204-1.
